JP6917734B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6917734B2
JP6917734B2 JP2017043076A JP2017043076A JP6917734B2 JP 6917734 B2 JP6917734 B2 JP 6917734B2 JP 2017043076 A JP2017043076 A JP 2017043076A JP 2017043076 A JP2017043076 A JP 2017043076A JP 6917734 B2 JP6917734 B2 JP 6917734B2
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Prior art keywords
film
oxide semiconductor
transistor
semiconductor film
insulating film
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JP2017043076A
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Japanese (ja)
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JP2018006733A (ja
Inventor
山崎　舜平
舜平 山崎
岡崎　健一
健一 岡崎
三宅　博之
博之 三宅
秋元　健吾
健吾 秋元
正美 神長
正美 神長
貴弘 井口
貴弘 井口
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2018006733A publication Critical patent/JP2018006733A/ja
Priority to JP2021119669A priority Critical patent/JP7104838B2/ja
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Publication of JP6917734B2 publication Critical patent/JP6917734B2/ja
Priority to JP2022086732A priority patent/JP7212813B2/ja
Priority to JP2022110572A priority patent/JP7213383B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/425—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer having different crystal properties in different TFTs or within an individual TFT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

Landscapes

  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2017043076A 2016-03-18 2017-03-07 半導体装置 Active JP6917734B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2021119669A JP7104838B2 (ja) 2016-03-18 2021-07-20 表示装置
JP2022086732A JP7212813B2 (ja) 2016-03-18 2022-05-27 表示装置
JP2022110572A JP7213383B2 (ja) 2016-03-18 2022-07-08 表示装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016055861 2016-03-18
JP2016055861 2016-03-18
JP2016125919 2016-06-24
JP2016125919 2016-06-24

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021119669A Division JP7104838B2 (ja) 2016-03-18 2021-07-20 表示装置

Publications (2)

Publication Number Publication Date
JP2018006733A JP2018006733A (ja) 2018-01-11
JP6917734B2 true JP6917734B2 (ja) 2021-08-11

Family

ID=59855900

Family Applications (7)

Application Number Title Priority Date Filing Date
JP2017043076A Active JP6917734B2 (ja) 2016-03-18 2017-03-07 半導体装置
JP2021119669A Active JP7104838B2 (ja) 2016-03-18 2021-07-20 表示装置
JP2022086732A Active JP7212813B2 (ja) 2016-03-18 2022-05-27 表示装置
JP2022110572A Active JP7213383B2 (ja) 2016-03-18 2022-07-08 表示装置
JP2023003587A Active JP7455242B2 (ja) 2016-03-18 2023-01-13 表示装置
JP2024038073A Active JP7715862B2 (ja) 2016-03-18 2024-03-12 半導体装置
JP2025120427A Pending JP2025142080A (ja) 2016-03-18 2025-07-17 半導体装置

Family Applications After (6)

Application Number Title Priority Date Filing Date
JP2021119669A Active JP7104838B2 (ja) 2016-03-18 2021-07-20 表示装置
JP2022086732A Active JP7212813B2 (ja) 2016-03-18 2022-05-27 表示装置
JP2022110572A Active JP7213383B2 (ja) 2016-03-18 2022-07-08 表示装置
JP2023003587A Active JP7455242B2 (ja) 2016-03-18 2023-01-13 表示装置
JP2024038073A Active JP7715862B2 (ja) 2016-03-18 2024-03-12 半導体装置
JP2025120427A Pending JP2025142080A (ja) 2016-03-18 2025-07-17 半導体装置

Country Status (2)

Country Link
US (1) US9905579B2 (enExample)
JP (7) JP6917734B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017137869A1 (en) * 2016-02-12 2017-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
US10388738B2 (en) 2016-04-01 2019-08-20 Semiconductor Energy Laboratory Co., Ltd. Composite oxide semiconductor and method for manufacturing the same
JP6668455B2 (ja) 2016-04-01 2020-03-18 株式会社半導体エネルギー研究所 酸化物半導体膜の作製方法
KR102403389B1 (ko) 2016-09-12 2022-06-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
JP7214351B2 (ja) * 2018-03-06 2023-01-30 株式会社ジャパンディスプレイ 検出装置
CN112461866B (zh) * 2020-11-18 2021-09-21 浙江大学 纳米粉晶主暴露面的电子衍射辅助测定方法
JPWO2022190984A1 (enExample) * 2021-03-08 2022-09-15
US20240412687A1 (en) * 2021-10-15 2024-12-12 Semiconductor Energy Laboratory Co., Ltd. Display apparatus and electronic device including the display apparatus
JP2025059498A (ja) * 2023-09-29 2025-04-10 株式会社ジャパンディスプレイ 半導体装置

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0663763U (ja) * 1993-02-18 1994-09-09 有限会社結城自動車工場 錠前を装置した、キーのキープレート。
JP2003241688A (ja) 2002-02-18 2003-08-29 Matsushita Electric Ind Co Ltd 表示装置
JP2007186971A (ja) * 2006-01-13 2007-07-26 Kikuo Teramoto 鍵
JP2007286150A (ja) * 2006-04-13 2007-11-01 Idemitsu Kosan Co Ltd 電気光学装置、並びに、電流制御用ｔｆｔ基板及びその製造方法
JP2008300612A (ja) 2007-05-31 2008-12-11 Panasonic Corp 表示装置及びその製造方法
US8232598B2 (en) 2007-09-20 2012-07-31 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
KR101048965B1 (ko) 2009-01-22 2011-07-12 삼성모바일디스플레이주식회사 유기 전계발광 표시장치
CN102067320B (zh) * 2009-05-19 2014-03-19 松下电器产业株式会社 柔性半导体装置的制造方法
KR101065407B1 (ko) 2009-08-25 2011-09-16 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
TWI525818B (zh) 2010-11-30 2016-03-11 半導體能源研究所股份有限公司 半導體裝置及半導體裝置之製造方法
US8921948B2 (en) * 2011-01-12 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6231735B2 (ja) 2011-06-01 2017-11-15 株式会社半導体エネルギー研究所 半導体装置
US8772130B2 (en) * 2011-08-23 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of SOI substrate
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102084274B1 (ko) * 2011-12-15 2020-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2013183289A1 (ja) 2012-06-08 2013-12-12 パナソニック株式会社 薄膜トランジスタ、表示パネルおよび薄膜トランジスタの製造方法
JP6376788B2 (ja) * 2013-03-26 2018-08-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
KR102037374B1 (ko) * 2013-03-27 2019-10-29 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법
KR102130139B1 (ko) * 2013-07-30 2020-07-03 엘지디스플레이 주식회사 산화물 반도체를 이용한 박막 트랜지스터 기판을 포함하는 유기발광 다이오드 표시장치 및 그 제조 방법
TWI685116B (zh) 2014-02-07 2020-02-11 日商半導體能源研究所股份有限公司 半導體裝置
JP6518890B2 (ja) 2014-03-31 2019-05-29 株式会社Ｊｏｌｅｄ 表示装置および電子機器
JP6613044B2 (ja) * 2014-04-22 2019-11-27 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
US9934723B2 (en) * 2014-06-25 2018-04-03 Lg Display Co., Ltd. Thin film transistor substrate, display panel including the same, and method of manufacturing the same
US20170184893A1 (en) 2014-07-11 2017-06-29 Sharp Kabushiki Kaisha Semiconductor apparatus, method of manufacturing same, and liquid crystal display apparatus
CN105390504B (zh) * 2014-08-29 2019-02-01 乐金显示有限公司 薄膜晶体管基板及使用它的显示装置
JP7227774B2 (ja) * 2019-01-30 2023-02-22 グローリー株式会社 鍵管理機

Also Published As

Publication number Publication date
JP7212813B2 (ja) 2023-01-25
JP2025142080A (ja) 2025-09-29
US20170271378A1 (en) 2017-09-21
JP2018006733A (ja) 2018-01-11
JP2024075626A (ja) 2024-06-04
JP7455242B2 (ja) 2024-03-25
JP2022122943A (ja) 2022-08-23
US9905579B2 (en) 2018-02-27
JP7104838B2 (ja) 2022-07-21
JP2023055729A (ja) 2023-04-18
JP2021184474A (ja) 2021-12-02
JP2022140465A (ja) 2022-09-26
JP7213383B2 (ja) 2023-01-26
JP7715862B2 (ja) 2025-07-30

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