JP6914190B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP6914190B2 JP6914190B2 JP2017515531A JP2017515531A JP6914190B2 JP 6914190 B2 JP6914190 B2 JP 6914190B2 JP 2017515531 A JP2017515531 A JP 2017515531A JP 2017515531 A JP2017515531 A JP 2017515531A JP 6914190 B2 JP6914190 B2 JP 6914190B2
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- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode
Description
<参考発明>
前記「発明が解決しようとする課題」として、さらに、トレンチ型MISFETでは、アバランシェ耐量の向上のために、ボディ層のできるだけ深い位置に、不純物濃度が高いコンタクト層を形成することが好ましい。たとえば、特許文献1では、第2溝を深くまでエッチングし、その後、イオン注入によってp+型領域を形成してもよい。
2 半導体基板
3 電極膜
4 ソースメタル
5 ゲートメタル
6 ソースパッド
7 ゲートパッド
8 パッド境界部
9 アクティブ領域
10 非アクティブ領域
11 ゲートトレンチ
12 フィールドプレートトレンチ
13 単位セル
14 n+型ソース層
15 p−型ボディ層
16 n−型ドレイン層
17 ゲート絶縁膜
18 ゲート電極
19 (ゲート絶縁膜)底部
20 ソース電極
21 埋め込み電極
23 ライン絶縁膜
24 第1部分
25 第2部分
26 仮想界面
27 境界部
28 絶縁膜
29 フィールドプレート
30 (絶縁膜)底部
32 埋め込みフィールドプレート
34 ライン絶縁膜
35 第1部分
36 第2部分
37 隙間
38 p−−型層
39 ボディダイオード
40 p+型ボディコンタクト層
41 層間絶縁膜
42 窒化シリコン膜
43 酸化シリコン膜
44 凹部
45 コンタクトホール
46 凹部
47 絶縁膜
48 n+型半導体膜
49 コンタクト
50 コンタクト
51 保護ダイオード
52 p+型領域
53 ハードマスク
54 マスク
55 熱酸化膜
56 堆積絶縁膜
57 絶縁膜
58 電極材料
59 電極材料
60 半導体装置
61 凹部
62 パッシベーション膜
63 ソースコンタクト
64 (凹部)側面
65 第1面
66 第2面
Claims (8)
- 半導体層と、
前記半導体層に形成されたゲートトレンチと、
前記ゲートトレンチの内面に配置された第1絶縁膜と、
前記第1絶縁膜を介して前記ゲートトレンチに配置されたゲート電極と、
前記ゲートトレンチと間隔を空けて前記半導体層に形成されたフィールドプレートトレンチと、
第2絶縁膜を介して前記フィールドプレートトレンチに配置されたフィールドプレートと、
前記ゲートトレンチと前記フィールドプレートトレンチとの間に配置されたソース層、ボディ層およびドレイン層と、
前記半導体層上に形成され、前記フィールドプレート、前記ソース層および前記ボディ層を露出させるコンタクトホールを有する層間絶縁膜とを含み、
前記第1絶縁膜は、少なくとも前記ゲートトレンチの底部において前記ゲートトレンチの内面から膜厚方向に、第1部分および前記第1部分よりも膜の緻密度が低い第2部分を含み、
前記フィールドプレートと前記ボディ層との間に隙間が形成されており、
前記半導体層上に形成され、かつ前記コンタクトホールを介して前記フィールドプレートトレンチの前記隙間に入り込み、前記隙間において前記ボディ層に接続されたソース電極を含み、
前記隙間は、断面視において前記フィールドプレートを挟んで対向する一対の隙間を含み、
前記一対の隙間のそれぞれは、前記第2絶縁膜に接する先端部を有しており、当該先端部が先細りとなるようにラウンド形状に形成されており、
前記ソース電極は、前記コンタクトホールの内面と段差なく滑らかに連なる側面であって、前記ソース層の厚さ方向途中まで径が狭まる第1面を含む側面を有している、半導体装置。 - 前記ゲートトレンチにおいて、前記ゲート電極の下方に配置された埋め込み電極をさらに含み、
前記第1絶縁膜は、前記ゲート電極を覆い、前記ゲート電極と前記埋め込み電極を絶縁分離するゲート絶縁膜と、前記埋め込み電極を覆うライン絶縁膜とを含み、
前記第1絶縁膜の第1部分および前記第2部分は、前記ライン絶縁膜に設けられている、請求項1に記載の半導体装置。 - 前記ゲート絶縁膜は、前記ゲートトレンチの内面から膜厚方向全体に亘って、前記第1部分と同程度の緻密度を有している、請求項2に記載の半導体装置。
- 前記ゲート絶縁膜と前記ライン絶縁膜との境界部の膜厚が、前記ゲート絶縁膜の膜厚の75%以上である、請求項2または3に記載の半導体装置。
- 前記第1絶縁膜は、酸化シリコンからなる、請求項1〜4のいずれか一項に記載の半導体装置。
- 前記ゲート電極は、ポリシリコンからなる、請求項1〜5のいずれか一項に記載の半導体装置。
- 前記第2絶縁膜は、少なくとも前記フィールドプレートトレンチの底部において前記フィールドプレートトレンチの内面から膜厚方向に、第1部分および前記第1部分よりも膜の緻密度が低い第2部分を含む、請求項1〜6のいずれか一項に記載の半導体装置。
- 前記フィールドプレートは、上下に絶縁分離された上部フィールドプレートおよび下部フィールドプレートを含み、
前記第2絶縁膜の前記第1部分および前記第2部分は、前記第2絶縁膜の前記下部フィールドプレートを覆う部分に設けられている、請求項1〜7のいずれか一項に記載の半導体装置。
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