JP6903833B2 - マルチ電極制御を備える高電圧デバイス - Google Patents

マルチ電極制御を備える高電圧デバイス Download PDF

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JP6903833B2
JP6903833B2 JP2017567057A JP2017567057A JP6903833B2 JP 6903833 B2 JP6903833 B2 JP 6903833B2 JP 2017567057 A JP2017567057 A JP 2017567057A JP 2017567057 A JP2017567057 A JP 2017567057A JP 6903833 B2 JP6903833 B2 JP 6903833B2
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high voltage
hvt
control gate
source node
field electrode
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JP2018524813A (ja
JP2018524813A5 (https=
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アール バヘル サンディープ
アール バヘル サンディープ
ディー シーマン マイケル
ディー シーマン マイケル
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テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5453—Dispositions of bond wires connecting between multiple bond pads on a chip, e.g. daisy chain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
JP2017567057A 2015-06-23 2016-06-22 マルチ電極制御を備える高電圧デバイス Active JP6903833B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/747,169 US9991225B2 (en) 2015-06-23 2015-06-23 High voltage device with multi-electrode control
US14/747,169 2015-06-23
PCT/US2016/038727 WO2016209934A1 (en) 2015-06-23 2016-06-22 High voltage device with multi-electrode control

Publications (3)

Publication Number Publication Date
JP2018524813A JP2018524813A (ja) 2018-08-30
JP2018524813A5 JP2018524813A5 (https=) 2019-07-11
JP6903833B2 true JP6903833B2 (ja) 2021-07-14

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JP2017567057A Active JP6903833B2 (ja) 2015-06-23 2016-06-22 マルチ電極制御を備える高電圧デバイス

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US (2) US9991225B2 (https=)
JP (1) JP6903833B2 (https=)
CN (2) CN107924918B (https=)
WO (1) WO2016209934A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9991225B2 (en) * 2015-06-23 2018-06-05 Texas Instruments Incorporated High voltage device with multi-electrode control
DE102017100614B4 (de) * 2017-01-13 2021-11-25 Infineon Technologies Austria Ag Halbleitervorrichtung mit einem Transistor und einer leitfähigen Platte
CN114823888B (zh) 2021-01-22 2025-10-03 联华电子股份有限公司 高电子迁移率晶体管及其制作方法
EP4044225B1 (en) * 2021-02-16 2024-06-26 Nexperia B.V. A semiconductor device and a method of manufacturing a semiconductor device
US12166476B2 (en) * 2022-12-14 2024-12-10 Globalfoundries U.S. Inc. High voltage device with linearizing field plate configuration

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JP3259106B2 (ja) 1992-09-02 2002-02-25 富士通株式会社 高電子移動度電界効果半導体装置
JP2001319490A (ja) 2000-05-12 2001-11-16 Mitsubishi Electric Corp 高電圧スイッチ回路および当該高電圧スイッチ回路を備える半導体記憶装置
US7161194B2 (en) * 2004-12-06 2007-01-09 Cree, Inc. High power density and/or linearity transistors
KR100782430B1 (ko) * 2006-09-22 2007-12-05 한국과학기술원 고전력을 위한 내부전계전극을 갖는 갈륨나이트라이드기반의 고전자 이동도 트랜지스터 구조
WO2011100304A1 (en) * 2010-02-09 2011-08-18 Massachusetts Institute Of Technology Dual-gate normally-off nitride transistors
JP2012049962A (ja) * 2010-08-30 2012-03-08 Toshiba Corp 半導体スイッチ回路
US8860120B2 (en) * 2010-09-22 2014-10-14 Nxp, B.V. Field modulating plate and circuit
US8680627B2 (en) 2011-01-14 2014-03-25 International Rectifier Corporation Stacked half-bridge package with a common conductive clip
JP5866773B2 (ja) * 2011-02-25 2016-02-17 富士通株式会社 化合物半導体装置及びその製造方法
JP2013074070A (ja) * 2011-09-27 2013-04-22 Fujitsu Ltd 半導体装置及び半導体装置の製造方法
US9312347B2 (en) * 2011-11-21 2016-04-12 Sensor Electronic Technology, Inc. Semiconductor device with multiple space-charge control electrodes
US8624667B2 (en) 2011-12-05 2014-01-07 Mitsubishi Electric Research Laboratories, Inc. High electron mobility transistors with multiple channels
JP6075003B2 (ja) * 2012-10-22 2017-02-08 富士通株式会社 トランジスタの制御回路及び電源装置
US20140225163A1 (en) * 2013-02-11 2014-08-14 International Rectifier Corporation Inverter Circuit Including Short Circuit Protected Composite Switch
US8946779B2 (en) * 2013-02-26 2015-02-03 Freescale Semiconductor, Inc. MISHFET and Schottky device integration
JP2014229823A (ja) * 2013-05-24 2014-12-08 古河電気工業株式会社 半導体装置および半導体モジュール
CN103489865B (zh) * 2013-09-16 2015-10-21 电子科技大学 一种横向集成soi半导体功率器件
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US9991225B2 (en) * 2015-06-23 2018-06-05 Texas Instruments Incorporated High voltage device with multi-electrode control

Also Published As

Publication number Publication date
WO2016209934A8 (en) 2018-03-01
CN107924918B (zh) 2021-11-26
WO2016209934A1 (en) 2016-12-29
JP2018524813A (ja) 2018-08-30
CN107924918A (zh) 2018-04-17
US10340252B2 (en) 2019-07-02
CN114023741A (zh) 2022-02-08
US20180233481A1 (en) 2018-08-16
US20160380089A1 (en) 2016-12-29
US9991225B2 (en) 2018-06-05

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