JP2018524813A5 - - Google Patents

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Publication number
JP2018524813A5
JP2018524813A5 JP2017567057A JP2017567057A JP2018524813A5 JP 2018524813 A5 JP2018524813 A5 JP 2018524813A5 JP 2017567057 A JP2017567057 A JP 2017567057A JP 2017567057 A JP2017567057 A JP 2017567057A JP 2018524813 A5 JP2018524813 A5 JP 2018524813A5
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JP
Japan
Prior art keywords
high voltage
field electrode
control gate
source node
hvt
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Application number
JP2017567057A
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English (en)
Japanese (ja)
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JP2018524813A (ja
JP6903833B2 (ja
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Priority claimed from US14/747,169 external-priority patent/US9991225B2/en
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Publication of JP2018524813A publication Critical patent/JP2018524813A/ja
Publication of JP2018524813A5 publication Critical patent/JP2018524813A5/ja
Application granted granted Critical
Publication of JP6903833B2 publication Critical patent/JP6903833B2/ja
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JP2017567057A 2015-06-23 2016-06-22 マルチ電極制御を備える高電圧デバイス Active JP6903833B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/747,169 US9991225B2 (en) 2015-06-23 2015-06-23 High voltage device with multi-electrode control
US14/747,169 2015-06-23
PCT/US2016/038727 WO2016209934A1 (en) 2015-06-23 2016-06-22 High voltage device with multi-electrode control

Publications (3)

Publication Number Publication Date
JP2018524813A JP2018524813A (ja) 2018-08-30
JP2018524813A5 true JP2018524813A5 (https=) 2019-07-11
JP6903833B2 JP6903833B2 (ja) 2021-07-14

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ID=57585634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017567057A Active JP6903833B2 (ja) 2015-06-23 2016-06-22 マルチ電極制御を備える高電圧デバイス

Country Status (4)

Country Link
US (2) US9991225B2 (https=)
JP (1) JP6903833B2 (https=)
CN (2) CN107924918B (https=)
WO (1) WO2016209934A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9991225B2 (en) * 2015-06-23 2018-06-05 Texas Instruments Incorporated High voltage device with multi-electrode control
DE102017100614B4 (de) * 2017-01-13 2021-11-25 Infineon Technologies Austria Ag Halbleitervorrichtung mit einem Transistor und einer leitfähigen Platte
CN114823888B (zh) 2021-01-22 2025-10-03 联华电子股份有限公司 高电子迁移率晶体管及其制作方法
EP4044225B1 (en) * 2021-02-16 2024-06-26 Nexperia B.V. A semiconductor device and a method of manufacturing a semiconductor device
US12166476B2 (en) * 2022-12-14 2024-12-10 Globalfoundries U.S. Inc. High voltage device with linearizing field plate configuration

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3259106B2 (ja) 1992-09-02 2002-02-25 富士通株式会社 高電子移動度電界効果半導体装置
JP2001319490A (ja) 2000-05-12 2001-11-16 Mitsubishi Electric Corp 高電圧スイッチ回路および当該高電圧スイッチ回路を備える半導体記憶装置
US7161194B2 (en) * 2004-12-06 2007-01-09 Cree, Inc. High power density and/or linearity transistors
KR100782430B1 (ko) * 2006-09-22 2007-12-05 한국과학기술원 고전력을 위한 내부전계전극을 갖는 갈륨나이트라이드기반의 고전자 이동도 트랜지스터 구조
WO2011100304A1 (en) * 2010-02-09 2011-08-18 Massachusetts Institute Of Technology Dual-gate normally-off nitride transistors
JP2012049962A (ja) * 2010-08-30 2012-03-08 Toshiba Corp 半導体スイッチ回路
US8860120B2 (en) * 2010-09-22 2014-10-14 Nxp, B.V. Field modulating plate and circuit
US8680627B2 (en) 2011-01-14 2014-03-25 International Rectifier Corporation Stacked half-bridge package with a common conductive clip
JP5866773B2 (ja) * 2011-02-25 2016-02-17 富士通株式会社 化合物半導体装置及びその製造方法
JP2013074070A (ja) * 2011-09-27 2013-04-22 Fujitsu Ltd 半導体装置及び半導体装置の製造方法
US9312347B2 (en) * 2011-11-21 2016-04-12 Sensor Electronic Technology, Inc. Semiconductor device with multiple space-charge control electrodes
US8624667B2 (en) 2011-12-05 2014-01-07 Mitsubishi Electric Research Laboratories, Inc. High electron mobility transistors with multiple channels
JP6075003B2 (ja) * 2012-10-22 2017-02-08 富士通株式会社 トランジスタの制御回路及び電源装置
US20140225163A1 (en) * 2013-02-11 2014-08-14 International Rectifier Corporation Inverter Circuit Including Short Circuit Protected Composite Switch
US8946779B2 (en) * 2013-02-26 2015-02-03 Freescale Semiconductor, Inc. MISHFET and Schottky device integration
JP2014229823A (ja) * 2013-05-24 2014-12-08 古河電気工業株式会社 半導体装置および半導体モジュール
CN103489865B (zh) * 2013-09-16 2015-10-21 电子科技大学 一种横向集成soi半导体功率器件
JP6240460B2 (ja) * 2013-10-02 2017-11-29 トランスフォーム・ジャパン株式会社 電界効果型化合物半導体装置及びその製造方法
EP3080845B1 (en) 2013-11-15 2021-12-22 Texas Instruments Incorporated Method and circuitry for controlling a depletion-mode transistor
US9343562B2 (en) * 2013-12-06 2016-05-17 Infineon Technologies Americas Corp. Dual-gated group III-V merged transistor
US9325308B2 (en) * 2014-05-30 2016-04-26 Delta Electronics, Inc. Semiconductor device and cascode circuit
US9991225B2 (en) * 2015-06-23 2018-06-05 Texas Instruments Incorporated High voltage device with multi-electrode control

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