JP6900367B2 - 撮像システムに関する近赤外スペクトル応答を拡張するためのシステムおよび方法 - Google Patents

撮像システムに関する近赤外スペクトル応答を拡張するためのシステムおよび方法 Download PDF

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JP6900367B2
JP6900367B2 JP2018508724A JP2018508724A JP6900367B2 JP 6900367 B2 JP6900367 B2 JP 6900367B2 JP 2018508724 A JP2018508724 A JP 2018508724A JP 2018508724 A JP2018508724 A JP 2018508724A JP 6900367 B2 JP6900367 B2 JP 6900367B2
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light
photodetector region
region
photodetector
array
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JP2018525837A (ja
JP2018525837A5 (enExample
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ビアイ−チェン・シェイ
セルジウ・ラドゥ・ゴマ
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クアルコム，インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
JP2018508724A 2015-08-21 2016-07-21 撮像システムに関する近赤外スペクトル応答を拡張するためのシステムおよび方法 Expired - Fee Related JP6900367B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/832,290 2015-08-21
US14/832,290 US9698191B2 (en) 2015-08-21 2015-08-21 System and method to extend near infrared spectral response for imaging systems
PCT/US2016/043307 WO2017034712A1 (en) 2015-08-21 2016-07-21 System and method to extend near infrared spectral response for imaging systems

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JP2018525837A JP2018525837A (ja) 2018-09-06
JP2018525837A5 JP2018525837A5 (enExample) 2019-08-08
JP6900367B2 true JP6900367B2 (ja) 2021-07-07

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Country Link
US (1) US9698191B2 (enExample)
EP (1) EP3338305B1 (enExample)
JP (1) JP6900367B2 (enExample)
KR (1) KR102125154B1 (enExample)
CN (1) CN107851653B (enExample)
BR (1) BR112018003194B1 (enExample)
WO (1) WO2017034712A1 (enExample)

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CN107665930B (zh) * 2017-08-30 2023-05-05 中国科学院上海技术物理研究所 一种实现波长拓展功能的量子阱红外探测器及设计方法
CN108847418A (zh) * 2018-06-15 2018-11-20 上海微阱电子科技有限公司 一种增强近红外量子效率的图像传感器结构和形成方法
JP2021168316A (ja) * 2018-07-13 2021-10-21 ソニーセミコンダクタソリューションズ株式会社 センサ素子および電子機器
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CN111048535B (zh) * 2018-10-15 2022-06-07 联华电子股份有限公司 影像传感器
CN109411500B (zh) 2018-10-31 2021-01-22 京东方科技集团股份有限公司 探测面板及其制作方法
CN109713003B (zh) * 2018-12-27 2021-06-04 厦门天马微电子有限公司 显示面板和显示装置
WO2020150938A1 (zh) * 2019-01-23 2020-07-30 深圳市汇顶科技股份有限公司 光电传感器及其制备方法
US11268849B2 (en) * 2019-04-22 2022-03-08 Applied Materials Israel Ltd. Sensing unit having photon to electron converter and a method
CN110211981B (zh) * 2019-06-12 2021-11-30 德淮半导体有限公司 图像传感器及其形成方法
US11276716B2 (en) 2019-12-17 2022-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor with improved near-infrared (NIR) radiation phase-detection autofocus (PDAF) performance
WO2021186908A1 (ja) * 2020-03-17 2021-09-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
FR3114189A1 (fr) * 2020-09-11 2022-03-18 Stmicroelectronics (Crolles 2) Sas Dispositif électronique comprenant une région semiconductrice photosensible et procédé de fabrication correspondant
CN114695397A (zh) * 2020-12-30 2022-07-01 上海集成电路装备材料产业创新中心有限公司 增强近红外量子效率的图像传感器结构和形成方法

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Also Published As

Publication number Publication date
EP3338305B1 (en) 2019-11-27
KR102125154B1 (ko) 2020-06-19
BR112018003194A2 (pt) 2018-09-25
US20170053964A1 (en) 2017-02-23
JP2018525837A (ja) 2018-09-06
US9698191B2 (en) 2017-07-04
BR112018003194B1 (pt) 2022-11-16
CN107851653A (zh) 2018-03-27
KR20180043271A (ko) 2018-04-27
CN107851653B (zh) 2022-03-22
EP3338305A1 (en) 2018-06-27
WO2017034712A1 (en) 2017-03-02

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