JP2018525837A5 - - Google Patents
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- JP2018525837A5 JP2018525837A5 JP2018508724A JP2018508724A JP2018525837A5 JP 2018525837 A5 JP2018525837 A5 JP 2018525837A5 JP 2018508724 A JP2018508724 A JP 2018508724A JP 2018508724 A JP2018508724 A JP 2018508724A JP 2018525837 A5 JP2018525837 A5 JP 2018525837A5
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- JP
- Japan
- Prior art keywords
- photodetector
- array
- lens
- region
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims 10
- 238000000034 method Methods 0.000 claims 5
- 230000003287 optical effect Effects 0.000 claims 5
- 230000001902 propagating effect Effects 0.000 claims 3
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 claims 1
- 238000001514 detection method Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/832,290 | 2015-08-21 | ||
| US14/832,290 US9698191B2 (en) | 2015-08-21 | 2015-08-21 | System and method to extend near infrared spectral response for imaging systems |
| PCT/US2016/043307 WO2017034712A1 (en) | 2015-08-21 | 2016-07-21 | System and method to extend near infrared spectral response for imaging systems |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018525837A JP2018525837A (ja) | 2018-09-06 |
| JP2018525837A5 true JP2018525837A5 (enExample) | 2019-08-08 |
| JP6900367B2 JP6900367B2 (ja) | 2021-07-07 |
Family
ID=56682249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018508724A Expired - Fee Related JP6900367B2 (ja) | 2015-08-21 | 2016-07-21 | 撮像システムに関する近赤外スペクトル応答を拡張するためのシステムおよび方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9698191B2 (enExample) |
| EP (1) | EP3338305B1 (enExample) |
| JP (1) | JP6900367B2 (enExample) |
| KR (1) | KR102125154B1 (enExample) |
| CN (1) | CN107851653B (enExample) |
| BR (1) | BR112018003194B1 (enExample) |
| WO (1) | WO2017034712A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9786705B2 (en) * | 2015-12-21 | 2017-10-10 | Qualcomm Incorporated | Solid state image sensor with extended spectral response |
| CN107665930B (zh) * | 2017-08-30 | 2023-05-05 | 中国科学院上海技术物理研究所 | 一种实现波长拓展功能的量子阱红外探测器及设计方法 |
| CN108847418A (zh) * | 2018-06-15 | 2018-11-20 | 上海微阱电子科技有限公司 | 一种增强近红外量子效率的图像传感器结构和形成方法 |
| JP2021168316A (ja) * | 2018-07-13 | 2021-10-21 | ソニーセミコンダクタソリューションズ株式会社 | センサ素子および電子機器 |
| KR102708011B1 (ko) * | 2018-09-03 | 2024-09-24 | 삼성전자주식회사 | 이미지 센서 |
| CN111048535B (zh) * | 2018-10-15 | 2022-06-07 | 联华电子股份有限公司 | 影像传感器 |
| CN109411500B (zh) | 2018-10-31 | 2021-01-22 | 京东方科技集团股份有限公司 | 探测面板及其制作方法 |
| CN109713003B (zh) * | 2018-12-27 | 2021-06-04 | 厦门天马微电子有限公司 | 显示面板和显示装置 |
| WO2020150938A1 (zh) * | 2019-01-23 | 2020-07-30 | 深圳市汇顶科技股份有限公司 | 光电传感器及其制备方法 |
| US11268849B2 (en) * | 2019-04-22 | 2022-03-08 | Applied Materials Israel Ltd. | Sensing unit having photon to electron converter and a method |
| CN110211981B (zh) * | 2019-06-12 | 2021-11-30 | 德淮半导体有限公司 | 图像传感器及其形成方法 |
| US11276716B2 (en) | 2019-12-17 | 2022-03-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor with improved near-infrared (NIR) radiation phase-detection autofocus (PDAF) performance |
| WO2021186908A1 (ja) * | 2020-03-17 | 2021-09-23 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置 |
| FR3114189A1 (fr) * | 2020-09-11 | 2022-03-18 | Stmicroelectronics (Crolles 2) Sas | Dispositif électronique comprenant une région semiconductrice photosensible et procédé de fabrication correspondant |
| CN114695397A (zh) * | 2020-12-30 | 2022-07-01 | 上海集成电路装备材料产业创新中心有限公司 | 增强近红外量子效率的图像传感器结构和形成方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7615808B2 (en) * | 2004-09-17 | 2009-11-10 | California Institute Of Technology | Structure for implementation of back-illuminated CMOS or CCD imagers |
| JP5147226B2 (ja) | 2006-12-15 | 2013-02-20 | 株式会社日立製作所 | 固体撮像素子、光検出器及びこれを用いた認証装置 |
| JP5364989B2 (ja) | 2007-10-02 | 2013-12-11 | ソニー株式会社 | 固体撮像装置およびカメラ |
| US7982177B2 (en) | 2008-01-31 | 2011-07-19 | Omnivision Technologies, Inc. | Frontside illuminated image sensor comprising a complex-shaped reflector |
| JP5121764B2 (ja) * | 2009-03-24 | 2013-01-16 | 株式会社東芝 | 固体撮像装置 |
| US20100259826A1 (en) * | 2009-04-10 | 2010-10-14 | Lightwave Power, Inc. | Planar plasmonic device for light reflection, diffusion and guiding |
| US8389921B2 (en) | 2010-04-30 | 2013-03-05 | Omnivision Technologies, Inc. | Image sensor having array of pixels and metal reflectors with widths scaled based on distance from center of the array |
| JP2012064824A (ja) * | 2010-09-17 | 2012-03-29 | Toshiba Corp | 固体撮像素子、その製造方法、カメラ |
| JP2012238632A (ja) | 2011-05-10 | 2012-12-06 | Sony Corp | 固体撮像装置、固体撮像装置の製造方法、及び、電子機器 |
| JP5814625B2 (ja) * | 2011-05-27 | 2015-11-17 | キヤノン株式会社 | 固体撮像装置、それを用いた撮像システム及び固体撮像装置の製造方法 |
| US20120313205A1 (en) * | 2011-06-10 | 2012-12-13 | Homayoon Haddad | Photosensitive Imagers Having Defined Textures for Light Trapping and Associated Methods |
| JP5760811B2 (ja) | 2011-07-28 | 2015-08-12 | ソニー株式会社 | 固体撮像素子および撮像システム |
| JP2013098503A (ja) | 2011-11-07 | 2013-05-20 | Toshiba Corp | 固体撮像素子 |
| US8716823B2 (en) | 2011-11-08 | 2014-05-06 | Aptina Imaging Corporation | Backside image sensor pixel with silicon microlenses and metal reflector |
| US8941203B2 (en) | 2012-03-01 | 2015-01-27 | Raytheon Company | Photodetector with surface plasmon resonance |
| JP6035921B2 (ja) * | 2012-07-10 | 2016-11-30 | 富士通株式会社 | 光検出器およびその製造方法 |
| US9105546B2 (en) * | 2012-09-19 | 2015-08-11 | Semiconductor Components Industries, Llc | Imaging systems with backside illuminated near infrared imaging pixels |
| US9093345B2 (en) * | 2012-10-26 | 2015-07-28 | Canon Kabushiki Kaisha | Solid-state imaging apparatus and imaging system |
| US9349770B2 (en) | 2014-02-11 | 2016-05-24 | Semiconductor Components Industries, Llc | Imaging systems with infrared pixels having increased quantum efficiency |
| JP2016001633A (ja) * | 2014-06-11 | 2016-01-07 | ソニー株式会社 | 固体撮像素子、および電子装置 |
-
2015
- 2015-08-21 US US14/832,290 patent/US9698191B2/en active Active
-
2016
- 2016-07-21 BR BR112018003194-1A patent/BR112018003194B1/pt not_active IP Right Cessation
- 2016-07-21 KR KR1020187004847A patent/KR102125154B1/ko not_active Expired - Fee Related
- 2016-07-21 JP JP2018508724A patent/JP6900367B2/ja not_active Expired - Fee Related
- 2016-07-21 EP EP16750551.0A patent/EP3338305B1/en active Active
- 2016-07-21 WO PCT/US2016/043307 patent/WO2017034712A1/en not_active Ceased
- 2016-07-21 CN CN201680045447.8A patent/CN107851653B/zh active Active
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