BR112018003194B1 - Sistema e método para estender a resposta espectral de quase infravermelho para sistemas de criação de imagem - Google Patents

Sistema e método para estender a resposta espectral de quase infravermelho para sistemas de criação de imagem Download PDF

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Publication number
BR112018003194B1
BR112018003194B1 BR112018003194-1A BR112018003194A BR112018003194B1 BR 112018003194 B1 BR112018003194 B1 BR 112018003194B1 BR 112018003194 A BR112018003194 A BR 112018003194A BR 112018003194 B1 BR112018003194 B1 BR 112018003194B1
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BR
Brazil
Prior art keywords
photodetector region
light
photodetector
region
sensor
Prior art date
Application number
BR112018003194-1A
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English (en)
Portuguese (pt)
Other versions
BR112018003194A2 (pt
Inventor
Biay-Cheng Hseih
Sergiu Radu Goma
Original Assignee
Qualcomm Incorporated
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Filing date
Publication date
Application filed by Qualcomm Incorporated filed Critical Qualcomm Incorporated
Publication of BR112018003194A2 publication Critical patent/BR112018003194A2/pt
Publication of BR112018003194B1 publication Critical patent/BR112018003194B1/pt

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
BR112018003194-1A 2015-08-21 2016-07-21 Sistema e método para estender a resposta espectral de quase infravermelho para sistemas de criação de imagem BR112018003194B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/832,290 US9698191B2 (en) 2015-08-21 2015-08-21 System and method to extend near infrared spectral response for imaging systems
US14/832,290 2015-08-21
PCT/US2016/043307 WO2017034712A1 (en) 2015-08-21 2016-07-21 System and method to extend near infrared spectral response for imaging systems

Publications (2)

Publication Number Publication Date
BR112018003194A2 BR112018003194A2 (pt) 2018-09-25
BR112018003194B1 true BR112018003194B1 (pt) 2022-11-16

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Application Number Title Priority Date Filing Date
BR112018003194-1A BR112018003194B1 (pt) 2015-08-21 2016-07-21 Sistema e método para estender a resposta espectral de quase infravermelho para sistemas de criação de imagem

Country Status (7)

Country Link
US (1) US9698191B2 (enExample)
EP (1) EP3338305B1 (enExample)
JP (1) JP6900367B2 (enExample)
KR (1) KR102125154B1 (enExample)
CN (1) CN107851653B (enExample)
BR (1) BR112018003194B1 (enExample)
WO (1) WO2017034712A1 (enExample)

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US9786705B2 (en) * 2015-12-21 2017-10-10 Qualcomm Incorporated Solid state image sensor with extended spectral response
CN107665930B (zh) * 2017-08-30 2023-05-05 中国科学院上海技术物理研究所 一种实现波长拓展功能的量子阱红外探测器及设计方法
CN108847418A (zh) * 2018-06-15 2018-11-20 上海微阱电子科技有限公司 一种增强近红外量子效率的图像传感器结构和形成方法
JP2021168316A (ja) * 2018-07-13 2021-10-21 ソニーセミコンダクタソリューションズ株式会社 センサ素子および電子機器
KR102708011B1 (ko) * 2018-09-03 2024-09-24 삼성전자주식회사 이미지 센서
CN111048535B (zh) * 2018-10-15 2022-06-07 联华电子股份有限公司 影像传感器
CN109411500B (zh) * 2018-10-31 2021-01-22 京东方科技集团股份有限公司 探测面板及其制作方法
CN109713003B (zh) * 2018-12-27 2021-06-04 厦门天马微电子有限公司 显示面板和显示装置
CN109863509B (zh) * 2019-01-23 2024-04-09 深圳市汇顶科技股份有限公司 光电传感器及其制备方法
US11268849B2 (en) * 2019-04-22 2022-03-08 Applied Materials Israel Ltd. Sensing unit having photon to electron converter and a method
CN110211981B (zh) * 2019-06-12 2021-11-30 德淮半导体有限公司 图像传感器及其形成方法
US11276716B2 (en) * 2019-12-17 2022-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor with improved near-infrared (NIR) radiation phase-detection autofocus (PDAF) performance
JP7645236B2 (ja) * 2020-03-17 2025-03-13 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
FR3114189A1 (fr) * 2020-09-11 2022-03-18 Stmicroelectronics (Crolles 2) Sas Dispositif électronique comprenant une région semiconductrice photosensible et procédé de fabrication correspondant
CN114695397A (zh) * 2020-12-30 2022-07-01 上海集成电路装备材料产业创新中心有限公司 增强近红外量子效率的图像传感器结构和形成方法

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US7425460B2 (en) * 2004-09-17 2008-09-16 California Institute Of Technology Method for implementation of back-illuminated CMOS or CCD imagers
JP5147226B2 (ja) 2006-12-15 2013-02-20 株式会社日立製作所 固体撮像素子、光検出器及びこれを用いた認証装置
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JP2012238632A (ja) 2011-05-10 2012-12-06 Sony Corp 固体撮像装置、固体撮像装置の製造方法、及び、電子機器
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Also Published As

Publication number Publication date
BR112018003194A2 (pt) 2018-09-25
JP2018525837A (ja) 2018-09-06
KR20180043271A (ko) 2018-04-27
KR102125154B1 (ko) 2020-06-19
JP6900367B2 (ja) 2021-07-07
WO2017034712A1 (en) 2017-03-02
EP3338305A1 (en) 2018-06-27
CN107851653A (zh) 2018-03-27
US9698191B2 (en) 2017-07-04
US20170053964A1 (en) 2017-02-23
EP3338305B1 (en) 2019-11-27
CN107851653B (zh) 2022-03-22

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