KR102125154B1 - 이미징 시스템들에 대한 근적외선 스펙트럼 응답을 확장하는 시스템 및 방법 - Google Patents

이미징 시스템들에 대한 근적외선 스펙트럼 응답을 확장하는 시스템 및 방법 Download PDF

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KR102125154B1
KR102125154B1 KR1020187004847A KR20187004847A KR102125154B1 KR 102125154 B1 KR102125154 B1 KR 102125154B1 KR 1020187004847 A KR1020187004847 A KR 1020187004847A KR 20187004847 A KR20187004847 A KR 20187004847A KR 102125154 B1 KR102125154 B1 KR 102125154B1
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photodetector
light
sensor
array
photodetector region
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KR20180043271A (ko
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비아이-청 셰이
세르지우 라두 고마
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퀄컴 인코포레이티드
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    • H01L27/14649—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H01L27/14627—
    • H01L27/14629—
    • H01L27/1464—
    • H01L27/14685—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
KR1020187004847A 2015-08-21 2016-07-21 이미징 시스템들에 대한 근적외선 스펙트럼 응답을 확장하는 시스템 및 방법 Expired - Fee Related KR102125154B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/832,290 2015-08-21
US14/832,290 US9698191B2 (en) 2015-08-21 2015-08-21 System and method to extend near infrared spectral response for imaging systems
PCT/US2016/043307 WO2017034712A1 (en) 2015-08-21 2016-07-21 System and method to extend near infrared spectral response for imaging systems

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KR20180043271A KR20180043271A (ko) 2018-04-27
KR102125154B1 true KR102125154B1 (ko) 2020-06-19

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US (1) US9698191B2 (enExample)
EP (1) EP3338305B1 (enExample)
JP (1) JP6900367B2 (enExample)
KR (1) KR102125154B1 (enExample)
CN (1) CN107851653B (enExample)
BR (1) BR112018003194B1 (enExample)
WO (1) WO2017034712A1 (enExample)

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US9786705B2 (en) * 2015-12-21 2017-10-10 Qualcomm Incorporated Solid state image sensor with extended spectral response
CN107665930B (zh) * 2017-08-30 2023-05-05 中国科学院上海技术物理研究所 一种实现波长拓展功能的量子阱红外探测器及设计方法
CN108847418A (zh) * 2018-06-15 2018-11-20 上海微阱电子科技有限公司 一种增强近红外量子效率的图像传感器结构和形成方法
JP2021168316A (ja) * 2018-07-13 2021-10-21 ソニーセミコンダクタソリューションズ株式会社 センサ素子および電子機器
KR102708011B1 (ko) * 2018-09-03 2024-09-24 삼성전자주식회사 이미지 센서
CN111048535B (zh) * 2018-10-15 2022-06-07 联华电子股份有限公司 影像传感器
CN109411500B (zh) * 2018-10-31 2021-01-22 京东方科技集团股份有限公司 探测面板及其制作方法
CN109713003B (zh) * 2018-12-27 2021-06-04 厦门天马微电子有限公司 显示面板和显示装置
WO2020150938A1 (zh) * 2019-01-23 2020-07-30 深圳市汇顶科技股份有限公司 光电传感器及其制备方法
US11268849B2 (en) * 2019-04-22 2022-03-08 Applied Materials Israel Ltd. Sensing unit having photon to electron converter and a method
CN110211981B (zh) * 2019-06-12 2021-11-30 德淮半导体有限公司 图像传感器及其形成方法
US11276716B2 (en) 2019-12-17 2022-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor with improved near-infrared (NIR) radiation phase-detection autofocus (PDAF) performance
JP7645236B2 (ja) * 2020-03-17 2025-03-13 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
FR3114189A1 (fr) * 2020-09-11 2022-03-18 Stmicroelectronics (Crolles 2) Sas Dispositif électronique comprenant une région semiconductrice photosensible et procédé de fabrication correspondant
CN114695397A (zh) * 2020-12-30 2022-07-01 上海集成电路装备材料产业创新中心有限公司 增强近红外量子效率的图像传感器结构和形成方法

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JP2008153361A (ja) 2006-12-15 2008-07-03 Hitachi Ltd 固体撮像素子、光検出器及びこれを用いた認証装置
US20120313205A1 (en) 2011-06-10 2012-12-13 Homayoon Haddad Photosensitive Imagers Having Defined Textures for Light Trapping and Associated Methods
JP2013030626A (ja) 2011-07-28 2013-02-07 Sony Corp 固体撮像素子および撮像システム

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Publication number Publication date
EP3338305A1 (en) 2018-06-27
JP2018525837A (ja) 2018-09-06
KR20180043271A (ko) 2018-04-27
JP6900367B2 (ja) 2021-07-07
CN107851653A (zh) 2018-03-27
WO2017034712A1 (en) 2017-03-02
BR112018003194B1 (pt) 2022-11-16
EP3338305B1 (en) 2019-11-27
CN107851653B (zh) 2022-03-22
US20170053964A1 (en) 2017-02-23
BR112018003194A2 (pt) 2018-09-25
US9698191B2 (en) 2017-07-04

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