BR112018003194A2 - sistema e método para estender a resposta espectral de quase infravermelho para sistemas de criação de imagem - Google Patents

sistema e método para estender a resposta espectral de quase infravermelho para sistemas de criação de imagem

Info

Publication number
BR112018003194A2
BR112018003194A2 BR112018003194-1A BR112018003194A BR112018003194A2 BR 112018003194 A2 BR112018003194 A2 BR 112018003194A2 BR 112018003194 A BR112018003194 A BR 112018003194A BR 112018003194 A2 BR112018003194 A2 BR 112018003194A2
Authority
BR
Brazil
Prior art keywords
photodetector region
lens
substrate
imaging systems
spectral response
Prior art date
Application number
BR112018003194-1A
Other languages
English (en)
Other versions
BR112018003194B1 (pt
Inventor
Hseih Biay-Cheng
Radu Goma Sergiu
Original Assignee
Qualcomm Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Incorporated filed Critical Qualcomm Incorporated
Publication of BR112018003194A2 publication Critical patent/BR112018003194A2/pt
Publication of BR112018003194B1 publication Critical patent/BR112018003194B1/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14629—Reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

uma inovação inclui um sensor de ir (400) possuindo um conjunto de pixels de sensor (401a-d) para converter luz em corrente, cada pixel de sensor do conjunto incluindo uma região de fotodetector (404, 412), uma lente (402) configurada para focar a luz para dentro da região de fotodetector, a lente adjacente à região de fotodetector de modo que a luz se propague através da lente e pra dentro da região de fotodetector, e um substrato (421) disposto com a região de fotodetector entre o substrato e a lente, o substrato possuindo um ou mais transistores (410) formados aqui. o sensor também inclui as estruturas refletoras (408) posicionadas entre pelo menos uma parte do substrato e pelo menos uma parte da região de fotodetector e de modo que pelo menos uma parte da região de fotodetector esteja entre uma ou mais estruturas refletoras e a lente, as uma ou mais estruturas refletoras configuradas para refletir a luz que passou através de pelo menos uma parte da região de fotodetector para dentro da região de fotodetector.
BR112018003194-1A 2015-08-21 2016-07-21 Sistema e método para estender a resposta espectral de quase infravermelho para sistemas de criação de imagem BR112018003194B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/832,290 2015-08-21
US14/832,290 US9698191B2 (en) 2015-08-21 2015-08-21 System and method to extend near infrared spectral response for imaging systems
PCT/US2016/043307 WO2017034712A1 (en) 2015-08-21 2016-07-21 System and method to extend near infrared spectral response for imaging systems

Publications (2)

Publication Number Publication Date
BR112018003194A2 true BR112018003194A2 (pt) 2018-09-25
BR112018003194B1 BR112018003194B1 (pt) 2022-11-16

Family

ID=56682249

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112018003194-1A BR112018003194B1 (pt) 2015-08-21 2016-07-21 Sistema e método para estender a resposta espectral de quase infravermelho para sistemas de criação de imagem

Country Status (7)

Country Link
US (1) US9698191B2 (pt)
EP (1) EP3338305B1 (pt)
JP (1) JP6900367B2 (pt)
KR (1) KR102125154B1 (pt)
CN (1) CN107851653B (pt)
BR (1) BR112018003194B1 (pt)
WO (1) WO2017034712A1 (pt)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9786705B2 (en) * 2015-12-21 2017-10-10 Qualcomm Incorporated Solid state image sensor with extended spectral response
CN107665930B (zh) * 2017-08-30 2023-05-05 中国科学院上海技术物理研究所 一种实现波长拓展功能的量子阱红外探测器及设计方法
CN108847418A (zh) * 2018-06-15 2018-11-20 上海微阱电子科技有限公司 一种增强近红外量子效率的图像传感器结构和形成方法
JP2021168316A (ja) * 2018-07-13 2021-10-21 ソニーセミコンダクタソリューションズ株式会社 センサ素子および電子機器
KR20200027123A (ko) * 2018-09-03 2020-03-12 삼성전자주식회사 이미지 센서
CN111048535B (zh) * 2018-10-15 2022-06-07 联华电子股份有限公司 影像传感器
CN109411500B (zh) * 2018-10-31 2021-01-22 京东方科技集团股份有限公司 探测面板及其制作方法
CN109713003B (zh) * 2018-12-27 2021-06-04 厦门天马微电子有限公司 显示面板和显示装置
WO2020150938A1 (zh) * 2019-01-23 2020-07-30 深圳市汇顶科技股份有限公司 光电传感器及其制备方法
US11268849B2 (en) * 2019-04-22 2022-03-08 Applied Materials Israel Ltd. Sensing unit having photon to electron converter and a method
CN110211981B (zh) * 2019-06-12 2021-11-30 德淮半导体有限公司 图像传感器及其形成方法
US11276716B2 (en) 2019-12-17 2022-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor with improved near-infrared (NIR) radiation phase-detection autofocus (PDAF) performance
FR3114189A1 (fr) * 2020-09-11 2022-03-18 Stmicroelectronics (Crolles 2) Sas Dispositif électronique comprenant une région semiconductrice photosensible et procédé de fabrication correspondant

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006137867A1 (en) * 2004-09-17 2006-12-28 California Institute Of Technology Fabrication method for back-illuminated cmos or ccd imagers made from soi wafer
JP5147226B2 (ja) 2006-12-15 2013-02-20 株式会社日立製作所 固体撮像素子、光検出器及びこれを用いた認証装置
JP5364989B2 (ja) 2007-10-02 2013-12-11 ソニー株式会社 固体撮像装置およびカメラ
US7982177B2 (en) 2008-01-31 2011-07-19 Omnivision Technologies, Inc. Frontside illuminated image sensor comprising a complex-shaped reflector
JP5121764B2 (ja) * 2009-03-24 2013-01-16 株式会社東芝 固体撮像装置
WO2010118418A2 (en) * 2009-04-10 2010-10-14 Lightwave Power, Inc. Planar plasmonic device for light reflection, diffusion and guiding
US8389921B2 (en) 2010-04-30 2013-03-05 Omnivision Technologies, Inc. Image sensor having array of pixels and metal reflectors with widths scaled based on distance from center of the array
JP2012064824A (ja) * 2010-09-17 2012-03-29 Toshiba Corp 固体撮像素子、その製造方法、カメラ
JP2012238632A (ja) 2011-05-10 2012-12-06 Sony Corp 固体撮像装置、固体撮像装置の製造方法、及び、電子機器
JP5814625B2 (ja) * 2011-05-27 2015-11-17 キヤノン株式会社 固体撮像装置、それを用いた撮像システム及び固体撮像装置の製造方法
US20120313205A1 (en) * 2011-06-10 2012-12-13 Homayoon Haddad Photosensitive Imagers Having Defined Textures for Light Trapping and Associated Methods
JP5760811B2 (ja) 2011-07-28 2015-08-12 ソニー株式会社 固体撮像素子および撮像システム
JP2013098503A (ja) 2011-11-07 2013-05-20 Toshiba Corp 固体撮像素子
US8716823B2 (en) 2011-11-08 2014-05-06 Aptina Imaging Corporation Backside image sensor pixel with silicon microlenses and metal reflector
US8941203B2 (en) 2012-03-01 2015-01-27 Raytheon Company Photodetector with surface plasmon resonance
JP6035921B2 (ja) * 2012-07-10 2016-11-30 富士通株式会社 光検出器およびその製造方法
US9105546B2 (en) * 2012-09-19 2015-08-11 Semiconductor Components Industries, Llc Imaging systems with backside illuminated near infrared imaging pixels
US9093345B2 (en) * 2012-10-26 2015-07-28 Canon Kabushiki Kaisha Solid-state imaging apparatus and imaging system
US9349770B2 (en) 2014-02-11 2016-05-24 Semiconductor Components Industries, Llc Imaging systems with infrared pixels having increased quantum efficiency
JP2016001633A (ja) * 2014-06-11 2016-01-07 ソニー株式会社 固体撮像素子、および電子装置

Also Published As

Publication number Publication date
JP2018525837A (ja) 2018-09-06
US20170053964A1 (en) 2017-02-23
US9698191B2 (en) 2017-07-04
BR112018003194B1 (pt) 2022-11-16
EP3338305A1 (en) 2018-06-27
JP6900367B2 (ja) 2021-07-07
KR20180043271A (ko) 2018-04-27
KR102125154B1 (ko) 2020-06-19
WO2017034712A1 (en) 2017-03-02
EP3338305B1 (en) 2019-11-27
CN107851653A (zh) 2018-03-27
CN107851653B (zh) 2022-03-22

Similar Documents

Publication Publication Date Title
BR112018003194A2 (pt) sistema e método para estender a resposta espectral de quase infravermelho para sistemas de criação de imagem
BR112015008296A2 (pt) sistema de múltiplas câmeras que usa óptica dobrada
BR112018071081A2 (pt) dispositivo micro-óptico com elemento de focagem integrado e estrutura de elemento de imagem
BR112016024643A2 (pt) sistema ótico
MX2016007805A (es) Sistema de impresion con laser.
CN108292361B8 (zh) 具有角度限制反射器的显示器集成的光学指纹传感器
BR112016029727A2 (pt) foco automático para câmeras de arranjo de óptica dobrada
CL2015002569A1 (es) Sistema de imágenes ópticas con múltiples canales ópticos de imagen
BR112017000073A2 (pt) "dispositivo não invasivo para determinação da fertilidade e/ou do sexo de um ovo, e método correspondente"
BR112016029565A2 (pt) sistema de múltiplas câmeras livre de paralaxe com capacidade para capturar imagens esféricas completas
WO2017213912A3 (en) Optical system
FR3004634B1 (fr) Tete de camera dentaire affectee a la detection de caries, et camera dentaire equipee de ladite tete
WO2005100961A3 (en) Imaging semiconductor strucutures using solid state illumination
BR112018011649A2 (pt) dispositivo, kit e método para verificar um pneu
DK3564578T3 (da) Optisk system og belysningsarmatur, som anvender samme
WO2015176053A3 (en) Imaging arrangement for optical object motion detection
BR102012011968A2 (pt) elemento de captura de imagem, e aparelho de captura de imagem e sistema de cÂmeras tendo o mesmo
BR112015019923A2 (pt) membro de lente óptica que compreende elemento de referência de subsuperfície
GB2563764A (en) Micro-optic device with double sided optical effect
WO2017072401A3 (en) A sensor element
BR112018012603A2 (pt) sensor de imagem em estado sólido com resposta espectral estendida
BR112017015375A2 (pt) sistema de lentes para aquisição de imagem visível e aquisição de imagem de íris infravermelha de alta qualidade
WO2016203212A3 (en) Optical system
MX338030B (es) Dispositivo para determinar la ubicacion de elementos mecanicos.
MA40664B1 (fr) Asservissement de centrale solaire thermique à concentration

Legal Events

Date Code Title Description
B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 21/07/2016, OBSERVADAS AS CONDICOES LEGAIS