JP6899070B2 - 固体撮像素子、固体撮像素子の製造方法、及び電子機器 - Google Patents
固体撮像素子、固体撮像素子の製造方法、及び電子機器 Download PDFInfo
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Description
(A)第1実施形態:
(B)第2実施形態:
(C)第3実施形態:
図1は、本実施形態に係る固体撮像素子の画素配列を平面的に示した図、図2は、本実施形態に係る固体撮像素子の断面構成を模式的に示す図である。なお、本実施形態では裏面照射型の固体撮像素子を例に取り説明を行うが、本技術は以下で説明する光電変換素子PDを備える表面照射型の固体撮像素子としても実現可能である。
次に、図10〜図13を参照しつつ第1実施形態に係る固体撮像素子の製造方法の一例を説明する。
図14は、本技術を適用した電子機器の一実施の形態の構成を示すブロック図である。
シリコン基板上に形成された光電変換素子をそれぞれ有する複数の画素を備える固体撮像素子であって、
一部の前記画素は、前記シリコン基板の厚み方向に沿う方向に平板状に延びる第1種分離領域によって前記光電変換素子を仕切られ、
他の一部の前記画素は、前記シリコン基板の厚み方向に沿う方向に平板状に延びる前記第1種分離領域と異なる材質で形成される第2種分離領域によって前記光電変換素子を仕切られている、固体撮像素子。
前記第1種分離領域で前記光電変換素子を仕切られた画素と、前記第2種分離領域で前記光電変換素子を仕切られた画素と、は互いに異なる色の画素である、前記(1)に記載の固体撮像素子。
複数の前記画素は、赤、青、緑の画素の組み合わせで構成され、
前記第2種分離領域で前記光電変換素子を仕切られた画素は、青画素により構成され、
前記第1種分離領域で前記光電変換素子を仕切られた画素は、赤画素及び緑画素により構成されている、前記(1)又は前記(2)に記載の固体撮像素子。
平板状の前記第2種分離領域はシリコン酸化膜であり、板厚が青色光の波長以下である、
前記(1)又は前記(2)に記載の固体撮像素子。
シリコン基板上に形成された光電変換素子をそれぞれ有する複数の画素を備える固体撮像素子の製造方法であって、
一部の前記画素について、前記光電変換素子を前記シリコン基板の厚み方向に沿う方向に平板状に延びて仕切る第1種分離領域を形成する工程と
他の一部の前記画素について、前記光電変換素子を前記シリコン基板の厚み方向に沿う方向に平板状に延びて仕切る第2種分離領域を前記第1種分離領域と異なる材質で形成する工程と、
を含む、固体撮像素子の製造方法。
シリコン基板上に形成された光電変換素子をそれぞれ有する複数の画素を備える固体撮像素子を備える電子機器であって、
一部の前記画素は、前記シリコン基板の厚み方向に沿う方向に平板状に延びる第1種分離領域によって前記光電変換素子を仕切られ、
他の一部の前記画素は、前記シリコン基板の厚み方向に沿う方向に平板状に延びる前記第1種分離領域と異なる材質で形成される第2種分離領域によって前記光電変換素子を仕切られている、電子機器。
Claims (6)
- 半導体基板上に形成された光電変換素子をそれぞれ有する複数の画素を備える固体撮像素子であって、
前記半導体基板に前記複数の画素の各単位画素領域の境界に沿って設けられた素子分離と、
前記半導体基板の裏面側に形成された絶縁層内に前記境界に沿って設けられた遮光膜と、を有し、
一部の前記画素は、前記半導体基板の厚み方向に沿う方向に平板状に延びる第1種分離領域によって前記光電変換素子を仕切られ、
他の一部の前記画素は、前記半導体基板の厚み方向に沿う方向に平板状に延びる前記第1種分離領域と異なる材質で形成される第2種分離領域によって前記光電変換素子を仕切られており、
前記素子分離、前記第1種分離領域及び前記第2種分離領域は、前記半導体基板の厚み方向について、前記半導体基板の裏面から、前記半導体基板の途中深さまで形成されており、前記半導体基板の表面との間に隙間を有する、固体撮像素子。 - 前記第1種分離領域で前記光電変換素子を仕切られた画素と、前記第2種分離領域で前記光電変換素子を仕切られた画素と、は互いに異なる色の画素である、請求項1に記載の固体撮像素子。
- 複数の前記画素は、赤、青、緑の画素の組み合わせで構成され、
前記第2種分離領域で前記光電変換素子を仕切られた画素は、青画素により構成され、
前記第1種分離領域で前記光電変換素子を仕切られた画素は、赤画素及び緑画素により構成されている、請求項1又は請求項2に記載の固体撮像素子。 - 平板状の前記第2種分離領域はシリコン酸化膜であり、板厚が青色光の波長以下である、請求項1又は請求項2に記載の固体撮像素子。
- 半導体基板上に形成された光電変換素子をそれぞれ有する複数の画素を備える固体撮像素子の製造方法であって、
前記半導体基板に前記複数の画素の各単位画素領域の境界に沿って設けられた素子分離と、一部の前記画素について、前記光電変換素子を前記半導体基板の厚み方向に沿う方向に平板状に延びて仕切る第1種分離領域と、他の一部の前記画素について、前記光電変換素子を前記半導体基板の厚み方向に沿う方向に平板状に延びて仕切る第2種分離領域と、を形成する工程として、
前記半導体基板の表面側から、不純物イオンの打ち込みにより、前記素子分離、前記第1種分離領域及び前記第2種分離領域の形成部位に、前記半導体基板の所定深さ範囲に不純物イオン領域を形成する工程と、
前記半導体基板の裏面から前記光電変換素子の裏面付近まで前記半導体基板の裏面側の部分を除去する工程と、
前記半導体基板の裏面側から、前記第2種分離領域の形成部位の前記不純物イオン領域に、前記不純物イオン領域の範囲内に収まるトレンチを形成する工程と、
前記トレンチ内に酸化膜を埋め込み、前記半導体基板の裏面上に成膜された酸化膜をエッチバックにより除去する工程と、を含み、
前記素子分離及び前記第1種分離領域を前記不純物イオン領域として形成し、前記第2種分離領域を前記酸化膜により形成する、固体撮像素子の製造方法。 - 半導体基板上に形成された光電変換素子をそれぞれ有する複数の画素を備える固体撮像素子を備える電子機器であって、
前記固体撮像素子は、
前記半導体基板に前記複数の画素の各単位画素領域の境界に沿って設けられた素子分離と、
前記半導体基板の裏面側に形成された絶縁層内に前記境界に沿って設けられた遮光膜と、を有し、
一部の前記画素は、前記半導体基板の厚み方向に沿う方向に平板状に延びる第1種分離領域によって前記光電変換素子を仕切られ、
他の一部の前記画素は、前記半導体基板の厚み方向に沿う方向に平板状に延びる前記第1種分離領域と異なる材質で形成される第2種分離領域によって前記光電変換素子を仕切られており、
前記素子分離、前記第1種分離領域及び前記第2種分離領域は、前記半導体基板の厚み方向について、前記半導体基板の裏面から、前記半導体基板の途中深さまで形成されており、前記半導体基板の表面との間に隙間を有する、電子機器。
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