JP6882861B2 - 半導体装置、液体吐出ヘッド、液体吐出ヘッドカートリッジおよび記録装置 - Google Patents

半導体装置、液体吐出ヘッド、液体吐出ヘッドカートリッジおよび記録装置 Download PDF

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Publication number
JP6882861B2
JP6882861B2 JP2016139695A JP2016139695A JP6882861B2 JP 6882861 B2 JP6882861 B2 JP 6882861B2 JP 2016139695 A JP2016139695 A JP 2016139695A JP 2016139695 A JP2016139695 A JP 2016139695A JP 6882861 B2 JP6882861 B2 JP 6882861B2
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Japan
Prior art keywords
discharge
unit
transistor
wiring
resistance
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JP2016139695A
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Japanese (ja)
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JP2018008458A5 (enExample
JP2018008458A (ja
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高木　誠
誠 高木
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2016139695A priority Critical patent/JP6882861B2/ja
Priority to US15/641,749 priority patent/US10259216B2/en
Priority to CN201710558553.2A priority patent/CN107618263B/zh
Publication of JP2018008458A publication Critical patent/JP2018008458A/ja
Publication of JP2018008458A5 publication Critical patent/JP2018008458A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/015—Ink jet characterised by the jet generation process
    • B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
    • B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
    • B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
    • B41J2/04541—Specific driving circuit
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/015—Ink jet characterised by the jet generation process
    • B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
    • B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
    • B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
    • B41J2/04548—Details of power line section of control circuit
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/015—Ink jet characterised by the jet generation process
    • B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
    • B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
    • B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
    • B41J2/0458—Control methods or devices therefor, e.g. driver circuits, control circuits controlling heads based on heating elements forming bubbles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/015—Ink jet characterised by the jet generation process
    • B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
    • B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
    • B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
    • B41J2/04581—Control methods or devices therefor, e.g. driver circuits, control circuits controlling heads based on piezoelectric elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/015—Ink jet characterised by the jet generation process
    • B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
    • B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
    • B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
    • B41J2/04586—Control methods or devices therefor, e.g. driver circuits, control circuits controlling heads of a type not covered by groups B41J2/04575 - B41J2/04585, or of an undefined type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
JP2016139695A 2016-07-14 2016-07-14 半導体装置、液体吐出ヘッド、液体吐出ヘッドカートリッジおよび記録装置 Active JP6882861B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016139695A JP6882861B2 (ja) 2016-07-14 2016-07-14 半導体装置、液体吐出ヘッド、液体吐出ヘッドカートリッジおよび記録装置
US15/641,749 US10259216B2 (en) 2016-07-14 2017-07-05 Semiconductor device, liquid discharge head, liquid discharge head cartridge, and printing apparatus
CN201710558553.2A CN107618263B (zh) 2016-07-14 2017-07-11 半导体器件、液体排出头、液体排出头盒和打印装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016139695A JP6882861B2 (ja) 2016-07-14 2016-07-14 半導体装置、液体吐出ヘッド、液体吐出ヘッドカートリッジおよび記録装置

Publications (3)

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JP2018008458A JP2018008458A (ja) 2018-01-18
JP2018008458A5 JP2018008458A5 (enExample) 2019-07-18
JP6882861B2 true JP6882861B2 (ja) 2021-06-02

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US (1) US10259216B2 (enExample)
JP (1) JP6882861B2 (enExample)
CN (1) CN107618263B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6882861B2 (ja) 2016-07-14 2021-06-02 キヤノン株式会社 半導体装置、液体吐出ヘッド、液体吐出ヘッドカートリッジおよび記録装置
JP7614892B2 (ja) * 2021-03-11 2025-01-16 キヤノン株式会社 半導体装置、液体吐出ヘッドおよび液体吐出装置
CN115179654B (zh) * 2022-08-15 2024-03-01 极海微电子股份有限公司 半导体器件、液体排出头、墨盒和打印装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5518016A (en) * 1978-07-26 1980-02-07 Hitachi Ltd Voltage divider
JPH0457291A (ja) * 1990-06-22 1992-02-25 Kawasaki Steel Corp 半導体記憶装置
JPH0878979A (ja) * 1994-09-08 1996-03-22 Rohm Co Ltd 信号処理装置
JP4632383B2 (ja) 1998-08-31 2011-02-16 キヤノン株式会社 光電変換装置に用いられる半導体装置
JP3329302B2 (ja) * 1999-02-26 2002-09-30 日本電気株式会社 自動利得切換型バースト光受信回路
US6491377B1 (en) * 1999-08-30 2002-12-10 Hewlett-Packard Company High print quality printhead
US6712439B1 (en) 2002-12-17 2004-03-30 Lexmark International, Inc. Integrated circuit and drive scheme for an inkjet printhead
US7125105B2 (en) 2003-09-08 2006-10-24 Canon Kabushiki Kaisha Semiconductor device for liquid ejection head, liquid ejection head, and liquid ejection apparatus
JP4537159B2 (ja) * 2003-09-08 2010-09-01 キヤノン株式会社 液体吐出ヘッド用半導体装置、液体吐出へッド及び液体吐出装置
CN1326697C (zh) * 2004-03-17 2007-07-18 明基电通股份有限公司 驱动加热器组的电路及具有该电路的流体喷射头
CN1876377A (zh) 2005-06-07 2006-12-13 明基电通股份有限公司 用以提供喷墨打印机的喷嘴电压的装置及方法
US8042897B2 (en) * 2008-07-02 2011-10-25 Lexmark International, Inc. Method for compensating shift in on resistance of transistor of printhead
JP5939960B2 (ja) * 2012-11-09 2016-06-29 キヤノン株式会社 半導体装置、液体吐出ヘッド、液体吐出ヘッドカードリッジおよび記録装置
JP6213107B2 (ja) * 2013-09-30 2017-10-18 セイコーエプソン株式会社 液体吐出装置
JP6470570B2 (ja) * 2015-01-06 2019-02-13 キヤノン株式会社 素子基板、液体吐出ヘッド及び記録装置
JP6882861B2 (ja) 2016-07-14 2021-06-02 キヤノン株式会社 半導体装置、液体吐出ヘッド、液体吐出ヘッドカートリッジおよび記録装置

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CN107618263A (zh) 2018-01-23
CN107618263B (zh) 2019-09-24
US10259216B2 (en) 2019-04-16
US20180015718A1 (en) 2018-01-18
JP2018008458A (ja) 2018-01-18

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