JP6881010B2 - 真空処理装置 - Google Patents
真空処理装置 Download PDFInfo
- Publication number
- JP6881010B2 JP6881010B2 JP2017094939A JP2017094939A JP6881010B2 JP 6881010 B2 JP6881010 B2 JP 6881010B2 JP 2017094939 A JP2017094939 A JP 2017094939A JP 2017094939 A JP2017094939 A JP 2017094939A JP 6881010 B2 JP6881010 B2 JP 6881010B2
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- Prior art keywords
- vacuum
- wafer
- vacuum processing
- substrate
- load lock
- Prior art date
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- 239000000758 substrate Substances 0.000 claims description 54
- 230000007246 mechanism Effects 0.000 claims description 20
- 230000007723 transport mechanism Effects 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 331
- 239000007789 gas Substances 0.000 description 42
- 230000003028 elevating effect Effects 0.000 description 15
- 238000000034 method Methods 0.000 description 11
- 230000000875 corresponding effect Effects 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 8
- 210000000078 claw Anatomy 0.000 description 6
- 239000010936 titanium Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 230000002079 cooperative effect Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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Description
さらに真空処理装置の同時に処理できるウエハの処理枚数を増やすと、真空処理装置内でウエハの搬送に時間がかかるようになるため、真空処理装置における単位時間当たりのウエハの処理枚数がそれほど多くならないことがある。
前記真空搬送室内に設けられ、先端側及び基端側に夫々基板を保持する保持体を含む真空搬送機構と、
前記真空搬送室の左右の各々に複数個ずつ気密に接続されると共に前記保持体の先端側に保持されている基板及び基端側に保持されている基板が一括して搬入され、これら基板を真空処理する真空処理モジュールと、
前記搬入出ポートから見て左右の各々に配置され、前記保持体の先端側に保持されている基板及び基端側に保持されている基板が一括して搬入または搬出されると共に前記常圧搬送機構により基板が搬入または搬出されるように構成され、前記真空搬送室との搬送口から見て手前側及び奥側に基板の載置部が設けられた常圧雰囲気と真空雰囲気とを切り替えるロードロック室と、を備え、
前記常圧搬送機構による基板の搬送領域における前記ロードロック室外の基板の搬送領域と前記ロードロック室内の基板の載置位置とが真空処理装置の前後方向において重なっていることと、
前記ロードロック室は、前記常圧搬送室との搬送口が、ロードロック室と前記真空搬送室との搬送口と互いに対向しない側面であって、前記常圧搬送室の中心側の側面に形成されたことと、を特徴とする。
また真空搬送室の左右の各々に、複数の真空処理モジュールを前後方向に並べて配置している。そして真空処理モジュールは当該モジュールの搬送口から見て手前側及び奥側に基板を載置できるように構成され、真空搬送機構がこれら基板を一括して基板処理モジュール及びロードロック室に対して搬送できるように構成されているため、装置のスループットを向上させることができる。
ロードロック室3Aの内部には、2枚のウエハWが水平に並べて載置されるように後述するウエハ載置棚300が設けられている。詳しくは後述するが、ウエハ載置棚300は例えば各々2枚のウエハWを上下に間隔をあけて配置するように構成され、2台のウエハ載置棚300を上下に接続し、2台接続したウエハ載置だな300の組を常圧搬送室2側から見て横方向に並ぶように配置している。
図1、図3に示すように真空搬送室9における中心部から外れた位置、ここでは、搬入出ポート1から見て真空搬送室9の中心部の右側の側壁の手前に真空搬送機構である真空搬送アーム6が設けられている。
真空搬送アーム6は、基台60に回転軸65を介して接続された下段アーム部61と、下段アーム部61の先端に連結された上段アーム部62と、を備えている。上段アーム部62の先端には、上方に向けて伸びる回転軸64が設けられ、回転軸64には各々保持体である2枚のへら状のウエハ保持部63a、63bが接続されている。
続いて図10に示すように例えば左側のロードロック室3Aにおける真空搬送室9側のゲートバルブ34を開き、真空搬送アーム6における第1のウエハ保持部63a及び第2のウエハ保持部63bの向きを揃え、上方から見て互いに重なるように配置し、上段側ウエハ載置棚301Aの高さ位置に対応する位置に位置合わせを行った状態で左側ロードロック室3Aに進入させる。
これを繰り返し、真空搬送室9の左右の前段、中段、後段に設けられた各真空処理モジュール4に夫々4枚の未処理ウエハW0を受け渡す。その後各真空処理モジュール4において、既述のようにウエハWの処理を行う。
また第2のウエハ保持部63bの先端側に保持した処理済みウエハWBが奥側の下段側ウエハ載置棚302Aにおける下段側の棚に対応する位置に移動し、基端側に保持した処理済みウエハWBが手前側の下段側ウエハ載置棚302Bにおける下段側の棚に対応する位置に移動する。
その後、真空搬送アーム6は、図20に示すように受け取った未処理ウエハW0を、処理済みウエハWA、WBを取り出した、搬入出ポート1から見て真空搬送室9の左側の後段の真空処理モジュール4に搬送し、各真空処理部400A、400Bに受け渡す。
また真空搬送アーム6は、例えば搬入出ポート1から見て真空搬送室9の右側の後段の真空処理モジュール4にて処理済みウエハWA、WBを受け取り、搬入出ポート1から見て右側のロードロック室3Bに受け渡す。さらに真空搬送アーム6は、同様に右側のロードロック室3Bにすでに載置されている未処理ウエハW0を処理済みウエハWA、WBを取り出した真空処理モジュール4に搬送する。
真空搬送アーム6のアーム部分を真空搬送室9の前方側と後方側とに伸ばそうとしたときに少なくともアーム部分を折りたたんだ状態で旋回できる必要がある。この時真空搬送アーム6の回転軸65を真空搬送室9の中央に配置すると旋回半径が短くなってしまう。そのため真空搬送アーム6の回転軸65を真空搬送室9の中央からずらした位置にすることで、真空搬送室9の大型化を避けながら、真空搬送アーム6の旋回半径を長くすることができ、真空搬送アーム6の長さを長くすることができる。
さらに真空処理モジュール4は、例えば基板にガスを供給して成膜する成膜装置や、基板をエッチングするエッチング装置であってもよい。
またロードロック室3A、3Bは、各々1枚の基板を保持する載置台を真空搬送室9から見て手前側と奥側とに配置した構成でも良く、さらには昇降ピンにより載置台上の基板を昇降させて、載置台と常圧搬送アーム5及び真空搬送アーム6との間で基板を受け渡すように構成してもよい。
2 常圧搬送室
3A,3B ロードロック室
4 真空処理モジュール
5 常圧搬送アーム
6 真空搬送アーム
63a 第1のウエハ保持部
63b 第2のウエハ保持部
300 ウエハ載置棚
301 上段側ウエハ載置棚
302 下段側ウエハ載置棚
400A、400B
真空処理部
W ウエハ
W0 未処理ウエハ
WA、WB 処理済みウエハ
Claims (9)
- 基板の搬送容器が搬入出される搬入出ポートと、前記搬入出ポート上の搬送容器に対して常圧雰囲気下で基板の受け渡しを行う常圧搬送機構が配置された常圧搬送室と、真空雰囲気である真空搬送室と、が前方から後方に向かってこの順に配置された真空処理装置において、
前記真空搬送室内に設けられ、先端側及び基端側に夫々基板を保持する保持体を含む真空搬送機構と、
前記真空搬送室の左右の各々に複数個ずつ気密に接続されると共に前記保持体の先端側に保持されている基板及び基端側に保持されている基板が一括して搬入され、これら基板を真空処理する真空処理モジュールと、
前記搬入出ポートから見て左右の各々に配置され、前記保持体の先端側に保持されている基板及び基端側に保持されている基板が一括して搬入または搬出されると共に前記常圧搬送機構により基板が搬入または搬出されるように構成され、前記真空搬送室との搬送口から見て手前側及び奥側に基板の載置部が設けられた常圧雰囲気と真空雰囲気とを切り替えるロードロック室と、を備え、
前記常圧搬送機構による基板の搬送領域における前記ロードロック室外の基板の搬送領域と前記ロードロック室内の基板の載置位置とが真空処理装置の前後方向において重なっていることと、
前記ロードロック室は、前記常圧搬送室との搬送口が、ロードロック室と前記真空搬送室との搬送口と互いに対向しない側面であって、前記常圧搬送室の中心側の側面に形成されたことと、を特徴とする真空処理装置。 - 前記ロードロック室における前記真空搬送室との搬送口から見て手前側及び奥側の基板の載置部に載置された基板の中心を結ぶラインは、前記搬入出ポートから前記真空搬送室を見て、左右方向の中心軸に対して斜めに配置されていることを特徴とする請求項1に記載の真空処理装置。
- 前記ロードロック室は、前記常圧搬送機構が前記搬送容器に対して基板を受け渡すときの搬送面よりも上方に設けられたことを特徴とする請求項1または2に記載の真空処理装置。
- 前記常圧搬送機構による基板の搬送領域における前記ロードロック室外の基板の搬送領域と前記ロードロック室内の基板の載置位置とが真空処理装置の上方から見て重なるように配置されることを特徴とする請求項3に記載の真空処理装置。
- 前記ロードロック室内には、前記真空搬送機構の保持体が下降したときに当該保持体の先端側及び基端側に保持されている各基板が同時に受け渡されて載置されるように、また前記常圧搬送機構が下降したときに当該常圧搬送機構に保持されている基板が受け渡されて載置されるように載置棚が設けられていることを特徴とする請求項1ないし4のいずれか一項に記載の真空処理装置。
- 前記真空搬送機構の保持体は、上下2段に設けられ、
前記ロードロック室内の載置棚は、上下2段の保持体に対応して2段設けられていることを特徴とする請求項5に記載の真空処理装置。 - 前記真空処理モジュールの各々は、前記真空搬送機構の上段側の保持体に載置される基板と下段側に載置される基板とが前記搬入出ポートから見て前後に載置されるように構成されることを特徴とする請求項5又は6に記載の真空処理装置。
- 前記ロードロック室は、真空処理前の基板及び真空処理後の基板の一方が載置される載置棚と、この載置棚とは異なる高さに設けられ、真空処理前の基板及び真空処理後の基板の他方が載置される載置棚と、を備えていることを特徴とする請求項5ないし7のいずれか一項に記載の真空処理装置。
- 真空搬送機構は少なくとも3本のアームを組み合わせてなる関節アームにより構成され、最も基端側のアームの回転中心は、前記真空搬送室における左右方向の中心から変位していることを特徴とする請求項1ないし8のいずれか一項に記載の真空処理装置。
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TW201909320A (zh) | 2019-03-01 |
JP2018190939A (ja) | 2018-11-29 |
KR20200003127A (ko) | 2020-01-08 |
WO2018207616A1 (ja) | 2018-11-15 |
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