JP6879617B2 - 受光素子の製造方法 - Google Patents
受光素子の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 47
- 239000012535 impurity Substances 0.000 claims description 30
- 230000031700 light absorption Effects 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 description 14
- 230000005684 electric field Effects 0.000 description 13
- 238000000137 annealing Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 230000035939 shock Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000003746 surface roughness Effects 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000000116 mitigating effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Description
最初に、本願発明の実施形態の内容を列記して説明する。
本願発明は、半導体基板上に第1導電型の第1半導体層を形成する工程と、前記第1半導体層上に光吸収層を形成する工程と、前記光吸収層上に増倍層を形成する工程と、前記増倍層上に第2導電型の第2半導体層を形成する工程と、前記第2半導体層上の第1の領域を覆うマスク層を形成する工程と、前記マスク層の開口から前記増倍層までの間を含む領域に不純物を導入する工程と、前記マスク層の開口の領域を含む前記第1半導体層、前記光吸収層、前記増倍層、および前記第2半導体層を除去し、前記増倍層の側面に前記不純物が導入された領域を有するメサ構造体を形成する工程と、を含む、受光素子の製造方法である。これにより、メサ構造体の上面が荒れることを抑制できる。
本願発明の実施形態に係る受光素子の具体例を、以下に図面を参照しつつ説明する。なお、本願発明はこれらの例示に限定されるものではなく、特許請求の範囲によって示され、特許請求の範囲と均等の意味及び範囲内での全ての変更が含まれることが意図される。また、本願発明の効果がある限りにおいて他の成分が含まれていてもよい。
12 バッファ層
14 光吸収層
16 衝撃緩和層
18 電界降下層
20 増倍層
22 ウィンドウ層
24 コンタクト層
26 絶縁層
28 絶縁層
30 メサ構造体
32 パッシベーション膜
34 p電極
36 n電極
38 保護膜
40 バリア電極
42 金属層
44 バンプ
46 レンズ
48 受光領域
50 レジスト
Claims (2)
- 半導体基板上に第1導電型の第1半導体層を形成する工程と、
前記第1半導体層上に光吸収層を形成する工程と、
前記光吸収層上に増倍層を形成する工程と、
前記増倍層上に第2導電型の第2半導体層を形成する工程と、
前記第2半導体層上の第1の領域を覆う第1マスク層を形成する工程と、
前記第1マスク層の開口から前記増倍層までの間を含む領域に熱拡散によって不純物を導入する工程と、
前記第1マスク層を除去し、前記第2半導体層上の前記第1の領域に、前記第1マスク層の幅よりも小さい大きさを有する第2マスク層を形成する工程と、
前記第2マスク層を用い、前記第2マスク層の開口の全ての領域を含む前記第1半導体層、前記光吸収層、前記増倍層、および前記第2半導体層を除去し、前記増倍層の側面に前記不純物が導入された領域を有するメサ構造体を形成する工程と、を含み、
前記不純物を導入する工程は、前記第1マスク層の前記開口のエッジ部分の下方における前記増倍層において、前記第1半導体層から前記第2半導体層の積層方向に交差する横方向に、前記不純物が進行する工程である、受光素子の製造方法。 - 前記不純物を導入する工程は、前記第1マスク層を拡散マスクとして、InPを含む前記第2半導体層の表面が露出した状態で、3.0×10−3torr以下の亜鉛雰囲気において80分以上行う条件の前記熱拡散によって行われる、請求項1に記載の受光素子の製造方法。
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JP2017038793A JP6879617B2 (ja) | 2017-03-01 | 2017-03-01 | 受光素子の製造方法 |
US15/907,590 US10580927B2 (en) | 2017-03-01 | 2018-02-28 | Process of forming light-receiving device |
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CN107615495B (zh) * | 2015-05-28 | 2019-05-03 | 日本电信电话株式会社 | 光接收元件和光学集成电路 |
CN109473496B (zh) * | 2018-10-30 | 2020-06-26 | 中国科学院上海技术物理研究所 | 一种雪崩探测器过渡层结构及制备方法 |
JP7361490B2 (ja) * | 2019-05-07 | 2023-10-16 | 日本ルメンタム株式会社 | 半導体受光素子及び半導体受光素子の製造方法 |
US11289532B1 (en) * | 2020-09-08 | 2022-03-29 | Argo Al, LLC | Systems, methods, and devices for reducing optical and electrical crosstalk in photodiodes |
CN113138207B (zh) * | 2021-04-22 | 2022-04-19 | 安徽理工大学 | 一种正交各向异性固体材料热扩散系数测试系统及方法 |
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JPH08274366A (ja) * | 1995-03-31 | 1996-10-18 | Nec Corp | 半導体受光素子 |
JPH11354827A (ja) | 1998-06-05 | 1999-12-24 | Hitachi Ltd | 受光素子およびその製造方法 |
US6495380B2 (en) * | 2000-12-11 | 2002-12-17 | Nortel Networks Limited | Epitaxially grown avalanche photodiode |
JP2008252145A (ja) | 2002-10-30 | 2008-10-16 | Fujitsu Ltd | アバランシェフォトダイオード |
JP2005086028A (ja) | 2003-09-09 | 2005-03-31 | Fujitsu Ltd | 半導体受光装置 |
JP2005327810A (ja) * | 2004-05-12 | 2005-11-24 | Anritsu Corp | 順メサ型受光素子 |
JP4755854B2 (ja) * | 2005-06-02 | 2011-08-24 | 富士通株式会社 | 半導体受光装置及びその製造方法 |
JP5195816B2 (ja) * | 2010-05-17 | 2013-05-15 | 富士電機株式会社 | 半導体装置の製造方法 |
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JP2018147940A (ja) | 2018-09-20 |
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