JP6875846B2 - 特にマイクロリソグラフィ投影露光装置用のミラー素子 - Google Patents
特にマイクロリソグラフィ投影露光装置用のミラー素子 Download PDFInfo
- Publication number
- JP6875846B2 JP6875846B2 JP2016242654A JP2016242654A JP6875846B2 JP 6875846 B2 JP6875846 B2 JP 6875846B2 JP 2016242654 A JP2016242654 A JP 2016242654A JP 2016242654 A JP2016242654 A JP 2016242654A JP 6875846 B2 JP6875846 B2 JP 6875846B2
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- Prior art date
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- 238000001393 microlithography Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims description 83
- 238000005452 bending Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 17
- 230000003287 optical effect Effects 0.000 claims description 10
- 238000005286 illumination Methods 0.000 claims description 9
- 230000006698 induction Effects 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 2
- 229960001716 benzalkonium Drugs 0.000 claims 1
- CYDRXTMLKJDRQH-UHFFFAOYSA-N benzododecinium Chemical compound CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 CYDRXTMLKJDRQH-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 54
- 230000000694 effects Effects 0.000 description 14
- 239000011248 coating agent Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 210000001747 pupil Anatomy 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 241000370685 Arge Species 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000006094 Zerodur Substances 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/18—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors
- G02B7/181—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/09—Multifaceted or polygonal mirrors, e.g. polygonal scanning mirrors; Fresnel mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/10—Mirrors with curved faces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Optical Elements Other Than Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102015225510.7A DE102015225510A1 (de) | 2015-12-16 | 2015-12-16 | Spiegelelement, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
| DE102015225510.7 | 2015-12-16 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017126062A JP2017126062A (ja) | 2017-07-20 |
| JP2017126062A5 JP2017126062A5 (https=) | 2020-01-30 |
| JP6875846B2 true JP6875846B2 (ja) | 2021-05-26 |
Family
ID=57584057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016242654A Active JP6875846B2 (ja) | 2015-12-16 | 2016-12-14 | 特にマイクロリソグラフィ投影露光装置用のミラー素子 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US20170176741A1 (https=) |
| JP (1) | JP6875846B2 (https=) |
| DE (1) | DE102015225510A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200201027A1 (en) * | 2018-12-21 | 2020-06-25 | Didi Research America, Llc | Micromachined mirror assembly having multiple coating layers |
| DE102021200131A1 (de) * | 2021-01-11 | 2022-07-14 | Carl Zeiss Smt Gmbh | Baugruppe mit einem Entkopplungsgelenk zur mechanischen Lagerung eines Elements |
| DE102023205340A1 (de) | 2023-06-07 | 2024-12-12 | Carl Zeiss Smt Gmbh | Verfahren zum Herstellen eines optischen Elements, sowie optisches Element und Beschichtungsanlage |
| DE102023210486A1 (de) | 2023-10-24 | 2025-04-24 | Carl Zeiss Smt Gmbh | Optisches Element und EUV-Lithographiesystem |
| DE102024210151A1 (de) | 2024-10-21 | 2026-04-23 | Carl Zeiss Smt Gmbh | Mikrospiegelelement und mikro-elektro-mechanisches System mit Mikrospiegelelement |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10314212B4 (de) | 2002-03-29 | 2010-06-02 | Hoya Corp. | Verfahren zur Herstellung eines Maskenrohlings, Verfahren zur Herstellung einer Transfermaske |
| US6994444B2 (en) | 2002-06-14 | 2006-02-07 | Asml Holding N.V. | Method and apparatus for managing actinic intensity transients in a lithography mirror |
| US6778315B2 (en) * | 2002-09-25 | 2004-08-17 | Rosemount Aerospace Inc. | Micro mirror structure with flat reflective coating |
| US7714983B2 (en) | 2003-09-12 | 2010-05-11 | Carl Zeiss Smt Ag | Illumination system for a microlithography projection exposure installation |
| JP2007108194A (ja) * | 2005-10-11 | 2007-04-26 | Canon Inc | 多層膜ミラーの製造方法、光学系の製造方法、露光装置、及びデバイス製造方法 |
| WO2007055401A1 (en) | 2005-11-10 | 2007-05-18 | Asahi Glass Company, Limited | Method for depositing reflective multilayer film of reflective mask blank for euv lithography and method for producing reflective mask blank for euv lithography |
| US7261430B1 (en) * | 2006-02-22 | 2007-08-28 | Teledyne Licensing, Llc | Thermal and intrinsic stress compensated micromirror apparatus and method |
| DE102006057568A1 (de) * | 2006-11-28 | 2008-05-29 | Micronic Laser Systems Ab | Mikrooptisches Element mit einem Substrat und Verfahren zu seiner Herstellung |
| DE102006057567B4 (de) | 2006-11-28 | 2008-09-04 | Micronic Laser Systems Ab | Mikrooptisches Element mit einem Substrat, an dem an einer optisch wirksamen Oberfläche mindestens eine Höhenstufe ausgebildet ist, Verfahren zu seiner Herstellung und Verwendungen |
| EP2243047B1 (en) | 2008-02-15 | 2021-03-31 | Carl Zeiss SMT GmbH | Facet mirror for use in a projection exposure apparatus for microlithography |
| DE102008009600A1 (de) | 2008-02-15 | 2009-08-20 | Carl Zeiss Smt Ag | Facettenspiegel zum Einsatz in einer Projektionsbelichtungsanlage für die Mikro-Lithographie |
| DE102008042212A1 (de) | 2008-09-19 | 2010-04-01 | Carl Zeiss Smt Ag | Reflektives optisches Element und Verfahren zu seiner Herstellung |
| JP5549222B2 (ja) * | 2009-12-28 | 2014-07-16 | 株式会社ニコン | 空間光変調器、露光装置およびそれらの製造方法 |
| DE102010028488A1 (de) | 2010-05-03 | 2011-11-03 | Carl Zeiss Smt Gmbh | Substrate für Spiegel für die EUV-Lithographie und deren Herstellung |
| DE102010017106A1 (de) * | 2010-05-27 | 2011-12-01 | Carl Zeiss Laser Optics Gmbh | Spiegel mit dielektrischer Beschichtung |
| DE102011003357A1 (de) | 2011-01-31 | 2012-08-02 | Carl Zeiss Smt Gmbh | Spiegel für den EUV-Wellenlängenbereich, Herstellungsverfahren für einen solchen Spiegel, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv |
| DE102014201622A1 (de) | 2014-01-30 | 2015-08-20 | Carl Zeiss Smt Gmbh | Verfahren zum Herstellen eines Spiegelelements |
| DE102015200328A1 (de) | 2015-01-13 | 2016-07-14 | Carl Zeiss Smt Gmbh | Verfahren zum Herstellen eines optischen Elements für ein optisches System, insbesondere für einemikrolithographische Projektionsbelichtungsanlage |
-
2015
- 2015-12-16 DE DE102015225510.7A patent/DE102015225510A1/de not_active Ceased
-
2016
- 2016-12-14 JP JP2016242654A patent/JP6875846B2/ja active Active
- 2016-12-16 US US15/381,910 patent/US20170176741A1/en not_active Abandoned
-
2017
- 2017-12-11 US US15/837,932 patent/US10598921B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017126062A (ja) | 2017-07-20 |
| DE102015225510A1 (de) | 2017-01-12 |
| US10598921B2 (en) | 2020-03-24 |
| US20170176741A1 (en) | 2017-06-22 |
| US20180101002A1 (en) | 2018-04-12 |
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