JP6875310B2 - 有機膜形成用組成物、半導体装置製造用基板、有機膜の形成方法及びパターン形成方法 - Google Patents
有機膜形成用組成物、半導体装置製造用基板、有機膜の形成方法及びパターン形成方法 Download PDFInfo
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- JP6875310B2 JP6875310B2 JP2018062335A JP2018062335A JP6875310B2 JP 6875310 B2 JP6875310 B2 JP 6875310B2 JP 2018062335 A JP2018062335 A JP 2018062335A JP 2018062335 A JP2018062335 A JP 2018062335A JP 6875310 B2 JP6875310 B2 JP 6875310B2
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Description
本発明の化合物は、部分構造として、下記一般式(1−1)で示される構造を分子内に2つ以上有する化合物である(以下、化合物(1)とする)。
本発明の化合物(1)の製造方法として、下記ケトン化合物(i)に対するエチニル化合物(ii)の付加反応によりアルコールである(iii)を得て(式1)、必要に応じて水酸基を保護して(iv)を得る(式2)方法を挙げることができる。
分液洗浄の際に使用する有機溶剤としては、化合物を溶解でき、水と混合すると2層分離するものであれば特に制限はないが、ヘキサン、ヘプタン、ベンゼン、トルエン、キシレン等の炭化水素類、酢酸エチル、酢酸n−ブチル、プロピレングリコールメチルエーテルアセテート等のエステル類、メチルエチルケトン、メチルアミルケトン、シクロヘキサノン、メチルイソブチルケトン等のケトン類、ジエチルエーテル、ジイソプロピルエーテル、メチル−tert−ブチルエーテル、シクロペンチルメチルエーテル等のエーテル類、塩化メチレン、クロロホルム、ジクロロエタン、トリクロロエチレン等の塩素系溶剤類、及びこれらの混合物等を挙げることができる。
また、本発明では、有機膜形成用の組成物であって、(A)上述の化合物(即ち、上記一般式(1−1)で示される部分構造を分子内に2つ以上有する化合物)、及び(B)有機溶剤を含有する有機膜形成用組成物を提供する。更に(C)酸発生剤、(D)界面活性剤、(E)芳香環を部分構造として有する、前記(A)の化合物以外の化合物、及び(F)可塑剤のうち1種以上を含有するものであることを特徴とする有機膜形成用組成物を提供する。
[ケイ素含有レジスト中間膜を用いた3層レジスト法]
本発明では、被加工体上に本発明の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素原子を含有する膜形成材料を用いてケイ素含有レジスト中間膜を形成し、該ケイ素含有膜の上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記ケイ素含有レジスト中間膜にエッチングでパターンを転写し、該パターンが転写されたケイ素含有レジスト中間膜をマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写するパターン形成方法が可能である。
また、本発明では、被加工体上に本発明の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素原子を含有するレジスト中間膜材料を用いてケイ素含有レジスト中間膜を形成し、該ケイ素含有レジスト中間膜の上に有機反射防止膜を形成し、該有機反射防止膜上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記有機反射防止膜と前記ケイ素含有レジスト中間膜にドライエッチングでパターンを転写し、該パターンが転写されたケイ素含有レジスト中間膜をマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写するパターン形成方法を提供する。
また、本発明では、上述の有機膜形成用組成物を用いた3層レジスト法によるパターン形成方法として、被加工体上に上述の本発明の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素酸化膜、ケイ素窒化膜、ケイ素酸化窒化膜、チタン酸化膜、及びチタン窒化膜から選ばれる無機ハードマスクを形成し、該無機ハードマスクの上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記無機ハードマスクにエッチングでパターンを転写し、該パターンが転写された無機ハードマスクをマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写するパターン形成方法を提供する。
また、本発明では、上述の有機膜形成用組成物を用いた4層レジスト法によるパターン形成方法として、被加工体上に上述の本発明の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素酸化膜、ケイ素窒化膜、ケイ素酸化窒化膜、チタン酸化膜、及びチタン窒化膜から選ばれる無機ハードマスクを形成し、該無機ハードマスクの上に有機反射防止膜を形成し、該有機反射防止膜上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記有機反射防止膜と前記無機ハードマスクにエッチングでパターンを転写し、該パターンが転写された無機ハードマスクをマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写するパターン形成方法も可能である。
N2雰囲気下、氷冷した1,3−ジエチニルベンゼン12.6gと9−フルオレノン36.0gとトルエン200gの混合液に、t−ブトキシカリウム24.7gを加え、氷浴にて3時間撹拌した。水を加えて反応を停止した。テトラヒドロフラン200mLを加え、水洗、減圧濃縮後、トルエンを加え、生じた固体をろ取、トルエン洗浄、減圧乾燥して42.3gの化合物(A1)を得た。
ν=3310(br)、3069、3046、3023、1592、1477、1450、1047、1001、791、747、726cm-1
1H NMR(600 MHz,DMSO−d6)δ7.78(d,J=7.4 Hz,4H),7.70(d,J=7.4 Hz,4H),7.43−7.40(m,4H),7.37−7.34(m,7H),7.32−7.29(m,1H),6.70(s,2H).
化合物(A1)9.7g、N,N−ジメチル−4−アミノピリジン0.5g、ピリジン30gを混合し、70℃まで昇温した。反応混合物に無水酢酸6.1gを加え、80℃まで昇温して4時間撹拌した。冷却後、水を加えて反応を停止した。トルエン100mL、テトラヒドロフラン100mLを加え、水洗、減圧濃縮後、ヘキサンを加え、生じた固体をろ取、ヘキサン洗浄、減圧乾燥して9.4gの化合物(A2)を得た。
IR(D−ATR):
ν=3065、1745、1592、1476、1450、1231、1209、1050、1008、969、794、769、755、733cm-1
1H NMR(600 MHz,DMSO−d6)δ7.84(d,J=7.6 Hz,4H),7.81(d,J=7.6 Hz,4H),7.49−7.46(m,4H),7.41−7.37(m,7H),7.35−7.31(m,1H),2.02(s,6H).
N2雰囲気下、氷冷した1,3−ジエチニルベンゼン6.3gとテトラヒドロフラン100gの混合液に、臭化エチルマグネシウム1Nテトラヒドロフラン溶液100mLを加え、徐々に室温に昇温した。チオキサントン20.2gを加え、40℃まで昇温して24時間撹拌した。冷却後、水を加えて反応を停止した。メチルイソブチルケトン200mLを加え、水洗、減圧濃縮後、ヘキサンを加え、生じた固体をろ取、ヘキサン洗浄、減圧乾燥し、目的物(A3)17.1gを得た。
IR(D−ATR):
ν=3299(br)、3062、3027、1581、1457、1443、1354、1185、1055、992、789、755、748、736cm-1
1H NMR(600 MHz,DMSO−d6)δ7.98(dd,J=7.8,1.4 Hz,4H),7.54(dd,J=7.8,1.4 Hz,4H),7.39(ddd,J=7.8,7.8,1.4 Hz,4H),7.33(ddd,J=7.8,7.8,1.4 Hz,4H),7.30−7.28(m,5H),7.21(br s,1H).
レゾルシノール711.0g、炭酸カリウム33.2g、N,N−ジメチルホルムアミド90gを混合し、55℃まで昇温した。プロパルギルブロマイド80%トルエン溶液35.7gをゆっくり滴下して、55℃で17時間加熱撹拌した。室温まで冷却後、トルエン150gを加え、水洗、減圧濃縮し、プロパルギル体(B1)18.6gを得た。
N2雰囲気下、氷冷したプロパルギル体(B1)18.6gと9−フルオレノン34.2gとテトラヒドロフラン100gの混合液に、t−ブトキシカリウム24.7gを加え、氷浴にて1時間撹拌した。飽和塩化アンモニウム水溶液を加えて反応を停止した。メチルイソブチルケトン200mLを加え、水洗、減圧濃縮後、プロピレングリコールモノメチルエーテルアセテートに溶剤置換し、固形分で47.4gの化合物(A4)を得た。
1H NMR(600 MHz,DMSO−d6)δ7.74(d,J=7.3 Hz,4H),7.59(d,J=7.3 Hz,4H),7.38(ddd,J=7.3,7.3,1.4 Hz,4H),7.32(ddd,J=7.3,7.3,1.4 Hz,4H),7.13(dd,J=8.5,8.5 Hz,1H),6.60(s,2H),6.54−6.50(m,3H),4.68(s,4H).
窒素雰囲気下、マグネシウム26.4g(1.09mol)を秤量した5Lの4つ口フラスコ内に脱水THF(テトラヒドロフラン)1,000mlで予め溶解した4,4’−ジブロモビフェニル168g(0.54mol)、塩化リチウム23.0g(0.54mol)をマグネシウムが浸る程度に加えた。ジブロモエタンを少量加え、反応をスタートさせた後、発熱を維持したまま残りのTHF溶液を3時間かけ滴下した。滴下終了後、THF500mlを加え、還流下で8時間熟成してGrignard試薬を調製した。内温55℃まで冷却した後、予め脱水THF400mlに溶解した9−フルオレノン150g(0.83mol)を2時間かけ滴下した。滴下終了後、還流下で5時間半熟成を行い、氷浴でフラスコを冷却し、飽和塩化アンモニウム水溶液1,000mlと純水1,000mlで反応をクエンチした。このとき溶液は白色の析出物が生じ、懸濁液となった。反応溶液にMIBK(メチルイソブチルケトン)150mlを追加し、懸濁液のまま分液ロートに移し変え、水層を抜き出し、更に純水500mlで分液水洗を行った後、有機層を減圧濃縮した。ジイソプロピルエーテルで再結晶を行い、生じた白色の結晶を濾別し、乾燥することでビフェニル誘導体(B2)を109g、収率51.0%で得た。
IR(D−ATR):ν=3539,3064,3039,1605,1495,1447,1164,1030,909,820,771,754,736cm−1。
1H−NMR(600 MHz,in DMSO−d6):δ=6.34(2H,−OH,s),7.24(4H,t),7.27(8H,d),7.36(4H,t−t),7.45(4H,d),7.81(4H,d)ppm。
13C−NMR(150 MHz,in DMSO−d6):δ=82.44,120.10,124.66,125.66,126.28,128.07,128.51,138.41,139.14,144.19,151.23ppm。
ビフェニル誘導体(B2)40.3g(78.4mmol)、2−ナフトール23.73g(164.6mmol)、1,2−ジクロロエタン240mlを1Lの3つ口フラスコに秤量した。30℃のオイルバス中で撹拌しながら、メタンスルホン酸7.3mlをゆっくり滴下した。滴下終了後オイルバスの温度を50℃に上げ、6時間反応を行った。室温まで放冷後、MIBK500mlで希釈し、不溶分を濾別して分液ロートに移し変え、300mlの超純水で分液水洗を9回繰り返した。有機層を減圧濃縮し、残渣にTHF 800ml加え、溶解させた後、ヘキサン2,500mlで晶出後、結晶を濾別、乾燥することでビフェニル誘導体化合物(A5)を51.6g、収率85.8%で得た。
IR(KBr):ν=3528,3389,3059,3030,1633,1604,
1506,1493,1446,1219,1181,750,740cm−1。
1H−NMR(600MHz,in DMSO−d6):δ=6.98(2H,d−d),7.05(2H,s−d),7.17(4H,d),7.24(2H,d−d),7.29(4H,t),7.38(4H,t),7.40(2H,s),7.45(4H,d),7.50(6H,d),7.58(2H,d),7.93(4H,d),9.72(2H,−OH,s)ppm。
13C−NMR(150MHz,in DMSO−d6):δ=64.59,108.35,118.77,120.58,125.19,126.11,126.36,126.62,126.94,127.16,127.71,127.88,128.20,129.35,133.39,138.14,139.26,139.59,144.82,150.56,155.39ppm。
ビフェニル誘導体化合物(A5)7.7g、炭酸カリウム3.0g、N,N−ジメチルホルムアミド40gを混合し、55℃まで昇温した。プロパルギルブロマイド80%トルエン溶液3.3gをゆっくり滴下して、55℃で14時間加熱撹拌した。室温まで冷却後、トルエン150gを加え、水洗、減圧濃縮し、プロパルギル体(A6)8.4gを得た。
(A6):Mw=966、Mw/Mn=1.09
9−フェニル−9−フルオレノール54.5g、1,2−ジクロロエタン200gを混合し、50℃まで昇温した。メタンスルホン酸20.3gをゆっくり滴下して、70℃で6時間加熱撹拌した。室温まで冷却後、トルエン650gを加え、水洗、減圧濃縮し、化合物(E1)60.7gを得た。
(E1):Mw=2700、Mw/Mn=1.39
上記化合物(A1)〜(A6)、(E1)、高沸点溶剤として(S1)1,6-ジアセトキシヘキサン:沸点260℃または(S2)トリプロピレングリコールモノメチルエーテル:沸点242℃を、プロピレングリコールモノメチルエーテルアセテート(PGMEA)、酸発生剤(AG1)0.05質量%、FC−4430(住友スリーエム(株)製)0.1質量%を含む溶液中に表1に示す割合で溶解させ、0.1μmのフッ素樹脂製のフィルターで濾過することによって有機膜材料(UDL−1〜7、比較UDL−1〜3)をそれぞれ調製した。
上記で調製した有機膜材料(UDL−1〜7、比較UDL−1〜3)をシリコン基板上に塗布し、酸素濃度が0.2%以下に管理された窒素気流下450℃で60秒間焼成した後、膜厚を測定し、その上にPGMEA溶媒をディスペンスし、30秒間放置しスピンドライ、100℃で60秒間ベークしてPGMEAを蒸発させ、膜厚を測定しPGMEA処理前後の膜厚差を求めた。
上記で調製した有機膜形成用組成物(UDL−1〜7、比較UDL−1〜3)をシリコン基板上に塗布し、大気中350℃で60秒間焼成した後、膜厚を測定し、その上にPGMEA溶媒をディスペンスし、30秒間放置しスピンドライ、100℃で60秒間ベークしてPGMEAを蒸発させ、膜厚を測定しPGMEA処理前後の膜厚差を求めた。これらの結果を表3に示す。
上記の有機膜形成用組成物(UDL−1〜7、比較UDL−1〜3)をそれぞれシリコン基板上に塗布し、大気中、180℃で焼成して115nmの塗布膜を形成し、膜厚を測定した。更に、この基板を酸素濃度が0.2%以下に管理された窒素気流下にて450℃で焼成し、膜厚を測定した(実施例3−1〜3−7、比較例3−1〜3−3)。これらの結果を表4に示す。
図3のように、上記の有機膜材料(UDL−1〜7、比較UDL−1〜3)をそれぞれ、密集ホールパターン(ホール直径0.16μm、ホール深さ0.50μm、隣り合う二つのホールの中心間の距離0.32μm)を有するSiO2ウエハー基板上に塗布し、ホットプレートを用いて酸素濃度が0.2%以下に管理された窒素気流下450℃で60秒間焼成し、有機膜8を形成した。使用した基板は図3(G)(俯瞰図)及び(H)(断面図)に示すような密集ホールパターンを有する下地基板7(SiO2ウエハー基板)である。得られた各ウエハー基板の断面形状を、走査型電子顕微鏡(SEM)を用いて観察し、ホール内部にボイド(空隙)なく、有機膜で充填されているかどうかを確認した。結果を表5に示す。埋め込み特性に劣る有機膜材料を用いた場合は、本評価において、ホール内部にボイドが発生する。埋め込み特性が良好な有機膜材料を用いた場合は、本評価において、図3(I)に示されるようにホール内部にボイドなく有機膜が充填される。
図4に示される巨大孤立トレンチパターン(図4(J)、トレンチ幅10μm、トレンチ深さ0.10μm)を有する下地基板9(SiO2ウエハー基板)上に有機膜形成用組成物(UDL−1〜7、比較UDL−1〜3)をそれぞれ塗布し、酸素濃度が0.2%以下に管理された窒素気流下、450℃で60秒間焼成した。トレンチ部分と非トレンチ部分の有機膜10の段差(図4(K)中のdelta10)を、パークシステムズ社製NX10原子間力顕微鏡(AFM)を用いて観察した。結果を表6に示す。本評価において、段差が小さいほど、平坦化特性が良好であるといえる。なお、本評価では、深さ0.10μmのトレンチパターンを通常膜厚約0.2μmの有機膜形成用組成物を用いて平坦化している。平坦化特性の優劣を評価するために厳しい条件を採用している。
上記の有機膜形成用組成物(UDL−1〜7、比較UDL−1〜3)を、それぞれ300nmのSiO2膜が形成されているシリコンウエハー基板上に塗布し、酸素濃度が0.2%以下に管理された窒素気流下にて450℃で60秒焼成し、有機膜(レジスト下層膜)を形成した。その上にCVD−SiONハードマスクを形成し、更に、有機反射防止膜材料(ARC−29A:日産化学社製)を塗布して210℃で60秒間ベークして膜厚80nmの有機反射防止膜を形成し、その上にレジスト上層膜材料のArF用単層レジストを塗布し、105℃で60秒間ベークして膜厚100nmのフォトレジスト膜を形成した。フォトレジスト膜上に液浸保護膜材料(TC−1)を塗布し90℃で60秒間ベークし膜厚50nmの保護膜を形成した。
チャンバー圧力10.0Pa
RFパワー1,500W
CF4ガス流量75sccm
O2ガス流量15sccm
時間15sec
チャンバー圧力2.0Pa
RFパワー500W
Arガス流量75sccm
O2ガス流量45sccm
時間120sec
チャンバー圧力2.0Pa
RFパワー2,200W
C5F12ガス流量20sccm
C2F6ガス流量10sccm
Arガス流量300sccm
O2 ガス流量60sccm
時間90sec
トレンチパターン(トレンチ幅10μm、トレンチ深さ0.10μm)を有するSiO2ウエハー基板上に、上記の有機膜形成用組成物(UDL−1〜7、比較UDL−1〜3)をそれぞれ塗布し、酸素濃度が0.2%以下に管理された窒素気流下にて450℃で60秒焼成した以外は、実施例6と同じ方法で積層膜を形成し、パターニング、ドライエッチングを行ない、出来上がったパターンの形状を観察した。
3…有機膜、 3’…有機膜形成用組成物、 3a…有機膜パターン、
4…ケイ素含有レジスト中間膜、 4a…ケイ素含有レジスト中間膜パターン、
5…レジスト上層膜、 5a…レジスト上層膜パターン、 6…露光部分、
7…密集ホールパターンを有する下地基板、 8…有機膜、
9…巨大孤立トレンチパターンを有する下地基板、 10…有機膜、
delta10…トレンチ部分と非トレンチ部分の有機膜の膜厚の差。
Claims (17)
- 有機膜形成用の組成物であって、(A)下記一般式(1−2)で示される化合物、及び(B)有機溶剤を含有するものであることを特徴とする有機膜形成用組成物。
- 更に、(C)酸発生剤、(D)界面活性剤、(E)芳香環を部分構造として有する、前記(A)の化合物以外の化合物、及び(F)可塑剤のうち1種以上を含有するものであることを特徴とする請求項1に記載の有機膜形成用組成物。
- 前記(E)成分が、重量平均分子量500〜100,000のものであることを特徴とする請求項2に記載の有機膜形成用組成物。
- 基板上に、請求項1から請求項3のいずれか一項に記載の有機膜形成用組成物が硬化した有機膜が形成されたものであることを特徴とする半導体装置製造用基板。
- 半導体装置の製造工程で適用される有機膜の形成方法であって、被加工体上に請求項1から請求項3のいずれか一項に記載の有機膜形成用組成物を回転塗布し、該有機膜形成用組成物が塗布された被加工体を不活性ガス雰囲気下で50℃以上600℃以下の温度で5秒〜7200秒の範囲で熱処理して硬化膜を得ることを特徴とする、有機膜の形成方法。
- 半導体装置の製造工程で適用される有機膜の形成方法であって、被加工体上に請求項1から請求項3のいずれか一項に記載の有機膜形成用組成物を回転塗布し、該有機膜形成用組成物が塗布された被加工体を空気中で50℃以上300℃以下の温度で5秒〜600秒の範囲で熱処理して塗布膜形成し、続いて該塗布膜が形成された被加工体を不活性ガス雰囲気下で200℃以上600℃以下の温度で10秒〜7200秒の範囲で熱処理して硬化膜を得ることを特徴とする、有機膜の形成方法。
- 前記不活性ガスとして、酸素濃度が1%以下のものを用いることを特徴とする、請求項5又は請求項6に記載の有機膜の形成方法。
- 前記被加工体として、高さ30nm以上の構造体又は段差を有する被加工体を用いることを特徴とする、請求項5から請求項7のいずれか一項に記載の有機膜の形成方法。
- 被加工体上に請求項1から請求項3のいずれか一項に記載の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素含有レジスト中間膜材料を用いてケイ素含有レジスト中間膜を形成し、該ケイ素含有レジスト中間膜の上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記ケイ素含有レジスト中間膜にエッチングでパターンを転写し、該パターンが転写されたケイ素含有レジスト中間膜をマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写することを特徴とするパターン形成方法。
- 被加工体上に請求項1から請求項3のいずれか一項に記載の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素含有レジスト中間膜材料を用いてケイ素含有レジスト中間膜を形成し、該ケイ素含有レジスト中間膜の上に有機反射防止膜を形成し、該有機反射防止膜上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成して4層膜構造とし、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記有機反射防止膜と前記ケイ素含有レジスト中間膜にエッチングでパターンを転写し、該パターンが転写されたケイ素含有レジスト中間膜をマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして前記被加工体をエッチングでパターンを転写することを特徴とするパターン形成方法。
- 被加工体上に請求項1から請求項3のいずれか一項に記載の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素酸化膜、ケイ素窒化膜、ケイ素酸化窒化膜、チタン酸化膜、及びチタン窒化膜から選ばれる無機ハードマスクを形成し、該無機ハードマスクの上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記無機ハードマスクにエッチングでパターンを転写し、該パターンが形成された無機ハードマスクをマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが形成された有機膜をマスクにして前記被加工体にエッチングでパターンを転写することを特徴とするパターン形成方法。
- 被加工体上に請求項1から請求項3のいずれか一項に記載の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素酸化膜、ケイ素窒化膜、ケイ素酸化窒化膜、チタン酸化膜、及びチタン窒化膜から選ばれる無機ハードマスクを形成し、該無機ハードマスクの上に有機反射防止膜を形成し、該有機反射防止膜上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成して4層膜構造とし、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記有機反射防止膜と前記無機ハードマスクにエッチングでパターンを転写し、該パターンが形成された無機ハードマスクをマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが形成された有機膜をマスクにして前記被加工体にエッチングでパターンを転写することを特徴とするパターン形成方法。
- 前記無機ハードマスクの形成を、CVD法又はALD法によって行うことを特徴とする請求項11又は請求項12に記載のパターン形成方法。
- 前記回路パターンの形成において、波長が10nm以上300nm以下の光を用いたリソグラフィー、電子線による直接描画、ナノインプリンティング、又はこれらの組み合わせによって回路パターンを形成することを特徴とする請求項9から請求項13のいずれか一項に記載のパターン形成方法。
- 前記回路パターンの形成において、アルカリ現像又は有機溶剤によって回路パターンを現像することを特徴とする請求項9から請求項14のいずれか一項に記載のパターン形成方法。
- 前記被加工体として、半導体装置基板、又は該半導体装置基板上に金属膜、金属炭化膜、金属酸化膜、金属窒化膜、金属酸化炭化膜、及び金属酸化窒化膜のいずれかが成膜されたものを用いることを特徴とする請求項9から請求項15のいずれか一項に記載のパターン形成方法。
- 前記被加工体として、ケイ素、チタン、タングステン、ハフニウム、ジルコニウム、クロム、ゲルマニウム、銅、銀、金、アルミニウム、インジウム、ガリウム、ヒ素、パラジウム、鉄、タンタル、イリジウム、コバルト、マンガン、モリブデン、又はこれらの合金を含むものを用いることを特徴とする請求項16に記載のパターン形成方法。
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