JP6870003B2 - 集積回路のためのパッケージングにおける又は関連する改善 - Google Patents

集積回路のためのパッケージングにおける又は関連する改善 Download PDF

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JP6870003B2
JP6870003B2 JP2018560621A JP2018560621A JP6870003B2 JP 6870003 B2 JP6870003 B2 JP 6870003B2 JP 2018560621 A JP2018560621 A JP 2018560621A JP 2018560621 A JP2018560621 A JP 2018560621A JP 6870003 B2 JP6870003 B2 JP 6870003B2
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layer
film
sensing
analyzer according
isfets
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JP2019516992A5 (cg-RX-API-DMAC7.html
JP2019516992A (ja
Inventor
アンサリ，ザヒド
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ディーエヌエーイー グループ ホールディングス リミテッド
ディーエヌエーイー グループ ホールディングス リミテッド
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

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  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Electrochemistry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)
  • Micromachines (AREA)
  • Measuring Or Testing Involving Enzymes Or Micro-Organisms (AREA)
  • Semiconductor Memories (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2018560621A 2016-05-18 2017-05-15 集積回路のためのパッケージングにおける又は関連する改善 Active JP6870003B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1608758.7A GB201608758D0 (en) 2016-05-18 2016-05-18 Improvements in or relating to packaging for integrated circuits
GB1608758.7 2016-05-18
PCT/GB2017/051352 WO2017199009A1 (en) 2016-05-18 2017-05-15 Improvements in or relating to packaging for integrated circuits

Publications (3)

Publication Number Publication Date
JP2019516992A JP2019516992A (ja) 2019-06-20
JP2019516992A5 JP2019516992A5 (cg-RX-API-DMAC7.html) 2021-04-08
JP6870003B2 true JP6870003B2 (ja) 2021-05-12

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JP2018560621A Active JP6870003B2 (ja) 2016-05-18 2017-05-15 集積回路のためのパッケージングにおける又は関連する改善

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Country Link
US (1) US10634642B2 (cg-RX-API-DMAC7.html)
EP (1) EP3458851A1 (cg-RX-API-DMAC7.html)
JP (1) JP6870003B2 (cg-RX-API-DMAC7.html)
CN (1) CN109416340B (cg-RX-API-DMAC7.html)
CA (1) CA3022281A1 (cg-RX-API-DMAC7.html)
GB (1) GB201608758D0 (cg-RX-API-DMAC7.html)
WO (1) WO2017199009A1 (cg-RX-API-DMAC7.html)

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5676042A (en) * 1979-11-28 1981-06-23 Shindengen Electric Mfg Co Ltd Field effect transistor for ion sensor
GB2096825A (en) * 1981-04-09 1982-10-20 Sibbald Alastair Chemical sensitive semiconductor field effect transducer
JPS6056247A (ja) * 1983-09-07 1985-04-01 Mitsubishi Electric Corp 半導体イオンセンサの絶縁法
JPS6073352A (ja) * 1983-09-30 1985-04-25 Hitachi Ltd 化学ｆｅｔセンサ
JP2988020B2 (ja) * 1991-07-03 1999-12-06 日本電気株式会社 半導体イオンセンサ
JP4450031B2 (ja) * 2007-08-22 2010-04-14 株式会社デンソー 半導体部品
US7759135B2 (en) * 2008-09-30 2010-07-20 Infineon Technologies Ag Method of forming a sensor node module
DE102009002060B4 (de) * 2009-03-31 2023-08-03 Endress+Hauser Conducta Gmbh+Co. Kg Ionensensitiver Sensor mit Mehrfachschichtaufbau im sensitiven Bereich sowie Verfahren zur Herstellung eines solchen Sensors
FR2991053B1 (fr) * 2012-05-25 2014-06-06 Hemodia Capteur isfet avec dispositif de controle integre.
EP2677307B1 (en) * 2012-06-21 2016-05-11 Nxp B.V. Integrated circuit with sensors and manufacturing method
GB2508582A (en) * 2012-10-12 2014-06-11 Dna Electronics Ltd ISFET with Titanium Nitride layer
US9395326B2 (en) * 2013-11-01 2016-07-19 Taiwan Semiconductor Manufacturing Company Limited FET sensing cell and method of improving sensitivity of the same
TWI600901B (zh) * 2015-09-14 2017-10-01 友達光電股份有限公司 離子感測場效電晶體
US9470652B1 (en) * 2015-09-15 2016-10-18 Freescale Semiconductor, Inc. Sensing field effect transistor devices and method of their manufacture

Also Published As

Publication number Publication date
US20190302051A1 (en) 2019-10-03
WO2017199009A1 (en) 2017-11-23
CN109416340A (zh) 2019-03-01
US10634642B2 (en) 2020-04-28
GB201608758D0 (en) 2016-06-29
JP2019516992A (ja) 2019-06-20
CA3022281A1 (en) 2017-11-23
EP3458851A1 (en) 2019-03-27
CN109416340B (zh) 2021-08-27

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