CA3022281A1 - Improvements in or relating to packaging for integrated circuits - Google Patents
Improvements in or relating to packaging for integrated circuits Download PDFInfo
- Publication number
- CA3022281A1 CA3022281A1 CA3022281A CA3022281A CA3022281A1 CA 3022281 A1 CA3022281 A1 CA 3022281A1 CA 3022281 A CA3022281 A CA 3022281A CA 3022281 A CA3022281 A CA 3022281A CA 3022281 A1 CA3022281 A1 CA 3022281A1
- Authority
- CA
- Canada
- Prior art keywords
- layer
- film
- assay device
- sensing
- passivation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
Landscapes
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Electrochemistry (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Apparatus Associated With Microorganisms And Enzymes (AREA)
- Micromachines (AREA)
- Measuring Or Testing Involving Enzymes Or Micro-Organisms (AREA)
- Semiconductor Memories (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1608758.7A GB201608758D0 (en) | 2016-05-18 | 2016-05-18 | Improvements in or relating to packaging for integrated circuits |
| GB1608758.7 | 2016-05-18 | ||
| PCT/GB2017/051352 WO2017199009A1 (en) | 2016-05-18 | 2017-05-15 | Improvements in or relating to packaging for integrated circuits |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA3022281A1 true CA3022281A1 (en) | 2017-11-23 |
Family
ID=56320613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA3022281A Abandoned CA3022281A1 (en) | 2016-05-18 | 2017-05-15 | Improvements in or relating to packaging for integrated circuits |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10634642B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP3458851A1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP6870003B2 (cg-RX-API-DMAC7.html) |
| CN (1) | CN109416340B (cg-RX-API-DMAC7.html) |
| CA (1) | CA3022281A1 (cg-RX-API-DMAC7.html) |
| GB (1) | GB201608758D0 (cg-RX-API-DMAC7.html) |
| WO (1) | WO2017199009A1 (cg-RX-API-DMAC7.html) |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5676042A (en) * | 1979-11-28 | 1981-06-23 | Shindengen Electric Mfg Co Ltd | Field effect transistor for ion sensor |
| GB2096825A (en) * | 1981-04-09 | 1982-10-20 | Sibbald Alastair | Chemical sensitive semiconductor field effect transducer |
| JPS6056247A (ja) * | 1983-09-07 | 1985-04-01 | Mitsubishi Electric Corp | 半導体イオンセンサの絶縁法 |
| JPS6073352A (ja) * | 1983-09-30 | 1985-04-25 | Hitachi Ltd | 化学ｆｅｔセンサ |
| JP2988020B2 (ja) * | 1991-07-03 | 1999-12-06 | 日本電気株式会社 | 半導体イオンセンサ |
| JP4450031B2 (ja) * | 2007-08-22 | 2010-04-14 | 株式会社デンソー | 半導体部品 |
| US7759135B2 (en) * | 2008-09-30 | 2010-07-20 | Infineon Technologies Ag | Method of forming a sensor node module |
| DE102009002060B4 (de) * | 2009-03-31 | 2023-08-03 | Endress+Hauser Conducta Gmbh+Co. Kg | Ionensensitiver Sensor mit Mehrfachschichtaufbau im sensitiven Bereich sowie Verfahren zur Herstellung eines solchen Sensors |
| FR2991053B1 (fr) * | 2012-05-25 | 2014-06-06 | Hemodia | Capteur isfet avec dispositif de controle integre. |
| EP2677307B1 (en) * | 2012-06-21 | 2016-05-11 | Nxp B.V. | Integrated circuit with sensors and manufacturing method |
| GB2508582A (en) * | 2012-10-12 | 2014-06-11 | Dna Electronics Ltd | ISFET with Titanium Nitride layer |
| US9395326B2 (en) * | 2013-11-01 | 2016-07-19 | Taiwan Semiconductor Manufacturing Company Limited | FET sensing cell and method of improving sensitivity of the same |
| TWI600901B (zh) * | 2015-09-14 | 2017-10-01 | 友達光電股份有限公司 | 離子感測場效電晶體 |
| US9470652B1 (en) * | 2015-09-15 | 2016-10-18 | Freescale Semiconductor, Inc. | Sensing field effect transistor devices and method of their manufacture |
-
2016
- 2016-05-18 GB GBGB1608758.7A patent/GB201608758D0/en not_active Ceased
-
2017
- 2017-05-15 CA CA3022281A patent/CA3022281A1/en not_active Abandoned
- 2017-05-15 WO PCT/GB2017/051352 patent/WO2017199009A1/en not_active Ceased
- 2017-05-15 CN CN201780026589.4A patent/CN109416340B/zh active Active
- 2017-05-15 EP EP17724429.0A patent/EP3458851A1/en not_active Withdrawn
- 2017-05-15 US US16/302,359 patent/US10634642B2/en active Active
- 2017-05-15 JP JP2018560621A patent/JP6870003B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20190302051A1 (en) | 2019-10-03 |
| WO2017199009A1 (en) | 2017-11-23 |
| CN109416340A (zh) | 2019-03-01 |
| US10634642B2 (en) | 2020-04-28 |
| GB201608758D0 (en) | 2016-06-29 |
| JP2019516992A (ja) | 2019-06-20 |
| EP3458851A1 (en) | 2019-03-27 |
| JP6870003B2 (ja) | 2021-05-12 |
| CN109416340B (zh) | 2021-08-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request |
Effective date: 20220114 |
|
| EEER | Examination request |
Effective date: 20220114 |
|
| EEER | Examination request |
Effective date: 20220114 |
|
| EEER | Examination request |
Effective date: 20220114 |
|
| FZDE | Discontinued |
Effective date: 20240325 |