JP6858091B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP6858091B2
JP6858091B2 JP2017138766A JP2017138766A JP6858091B2 JP 6858091 B2 JP6858091 B2 JP 6858091B2 JP 2017138766 A JP2017138766 A JP 2017138766A JP 2017138766 A JP2017138766 A JP 2017138766A JP 6858091 B2 JP6858091 B2 JP 6858091B2
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Prior art keywords
insulating film
semiconductor region
semiconductor
region
view
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JP2017138766A
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English (en)
Japanese (ja)
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JP2019021761A (ja
JP2019021761A5 (https=
Inventor
貴博 森川
貴博 森川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Minebea Power Semiconductor Device Inc
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Hitachi Power Semiconductor Device Ltd
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Application filed by Hitachi Power Semiconductor Device Ltd filed Critical Hitachi Power Semiconductor Device Ltd
Priority to JP2017138766A priority Critical patent/JP6858091B2/ja
Priority to CN201880023964.4A priority patent/CN110521002B/zh
Priority to PCT/JP2018/020457 priority patent/WO2019017076A1/ja
Publication of JP2019021761A publication Critical patent/JP2019021761A/ja
Publication of JP2019021761A5 publication Critical patent/JP2019021761A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thyristors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2017138766A 2017-07-18 2017-07-18 半導体装置およびその製造方法 Active JP6858091B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017138766A JP6858091B2 (ja) 2017-07-18 2017-07-18 半導体装置およびその製造方法
CN201880023964.4A CN110521002B (zh) 2017-07-18 2018-05-29 半导体器件及其制造方法
PCT/JP2018/020457 WO2019017076A1 (ja) 2017-07-18 2018-05-29 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017138766A JP6858091B2 (ja) 2017-07-18 2017-07-18 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2019021761A JP2019021761A (ja) 2019-02-07
JP2019021761A5 JP2019021761A5 (https=) 2020-01-23
JP6858091B2 true JP6858091B2 (ja) 2021-04-14

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Family Applications (1)

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JP2017138766A Active JP6858091B2 (ja) 2017-07-18 2017-07-18 半導体装置およびその製造方法

Country Status (3)

Country Link
JP (1) JP6858091B2 (https=)
CN (1) CN110521002B (https=)
WO (1) WO2019017076A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2025022836A1 (https=) * 2023-07-24 2025-01-30

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0834312B2 (ja) * 1988-12-06 1996-03-29 富士電機株式会社 縦形電界効果トランジスタ
TW218424B (https=) * 1992-05-21 1994-01-01 Philips Nv
EP0693773B1 (en) * 1994-07-14 2005-02-09 STMicroelectronics S.r.l. VDMOS power device and manufacturing process thereof
EP0841702A1 (en) * 1996-11-11 1998-05-13 STMicroelectronics S.r.l. Lateral or vertical DMOSFET with high breakdown voltage
JP3617507B2 (ja) * 2002-07-01 2005-02-09 日産自動車株式会社 炭化珪素半導体装置の製造方法、及びその製造方法によって製造される炭化珪素半導体装置
JP3981028B2 (ja) * 2002-09-11 2007-09-26 株式会社東芝 半導体装置
JP5997426B2 (ja) * 2011-08-19 2016-09-28 株式会社日立製作所 半導体装置および半導体装置の製造方法
JP6168732B2 (ja) * 2012-05-11 2017-07-26 株式会社日立製作所 炭化珪素半導体装置およびその製造方法
US9490328B2 (en) * 2013-06-26 2016-11-08 Hitachi, Ltd. Silicon carbide semiconductor device and manufacturing method of the same
US9214572B2 (en) * 2013-09-20 2015-12-15 Monolith Semiconductor Inc. High voltage MOSFET devices and methods of making the devices

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Publication number Publication date
JP2019021761A (ja) 2019-02-07
CN110521002A (zh) 2019-11-29
CN110521002B (zh) 2022-11-11
WO2019017076A1 (ja) 2019-01-24

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