JP2019021761A5 - - Google Patents
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- Publication number
- JP2019021761A5 JP2019021761A5 JP2017138766A JP2017138766A JP2019021761A5 JP 2019021761 A5 JP2019021761 A5 JP 2019021761A5 JP 2017138766 A JP2017138766 A JP 2017138766A JP 2017138766 A JP2017138766 A JP 2017138766A JP 2019021761 A5 JP2019021761 A5 JP 2019021761A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- insulating film
- semiconductor
- view
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 108
- 239000000758 substrate Substances 0.000 claims 17
- 239000012535 impurity Substances 0.000 claims 15
- 238000004519 manufacturing process Methods 0.000 claims 10
- 238000000034 method Methods 0.000 claims 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017138766A JP6858091B2 (ja) | 2017-07-18 | 2017-07-18 | 半導体装置およびその製造方法 |
| CN201880023964.4A CN110521002B (zh) | 2017-07-18 | 2018-05-29 | 半导体器件及其制造方法 |
| PCT/JP2018/020457 WO2019017076A1 (ja) | 2017-07-18 | 2018-05-29 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017138766A JP6858091B2 (ja) | 2017-07-18 | 2017-07-18 | 半導体装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019021761A JP2019021761A (ja) | 2019-02-07 |
| JP2019021761A5 true JP2019021761A5 (https=) | 2020-01-23 |
| JP6858091B2 JP6858091B2 (ja) | 2021-04-14 |
Family
ID=65015205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017138766A Active JP6858091B2 (ja) | 2017-07-18 | 2017-07-18 | 半導体装置およびその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6858091B2 (https=) |
| CN (1) | CN110521002B (https=) |
| WO (1) | WO2019017076A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2025022836A1 (https=) * | 2023-07-24 | 2025-01-30 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0834312B2 (ja) * | 1988-12-06 | 1996-03-29 | 富士電機株式会社 | 縦形電界効果トランジスタ |
| TW218424B (https=) * | 1992-05-21 | 1994-01-01 | Philips Nv | |
| EP0693773B1 (en) * | 1994-07-14 | 2005-02-09 | STMicroelectronics S.r.l. | VDMOS power device and manufacturing process thereof |
| EP0841702A1 (en) * | 1996-11-11 | 1998-05-13 | STMicroelectronics S.r.l. | Lateral or vertical DMOSFET with high breakdown voltage |
| JP3617507B2 (ja) * | 2002-07-01 | 2005-02-09 | 日産自動車株式会社 | 炭化珪素半導体装置の製造方法、及びその製造方法によって製造される炭化珪素半導体装置 |
| JP3981028B2 (ja) * | 2002-09-11 | 2007-09-26 | 株式会社東芝 | 半導体装置 |
| JP5997426B2 (ja) * | 2011-08-19 | 2016-09-28 | 株式会社日立製作所 | 半導体装置および半導体装置の製造方法 |
| JP6168732B2 (ja) * | 2012-05-11 | 2017-07-26 | 株式会社日立製作所 | 炭化珪素半導体装置およびその製造方法 |
| US9490328B2 (en) * | 2013-06-26 | 2016-11-08 | Hitachi, Ltd. | Silicon carbide semiconductor device and manufacturing method of the same |
| US9214572B2 (en) * | 2013-09-20 | 2015-12-15 | Monolith Semiconductor Inc. | High voltage MOSFET devices and methods of making the devices |
-
2017
- 2017-07-18 JP JP2017138766A patent/JP6858091B2/ja active Active
-
2018
- 2018-05-29 CN CN201880023964.4A patent/CN110521002B/zh active Active
- 2018-05-29 WO PCT/JP2018/020457 patent/WO2019017076A1/ja not_active Ceased
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