CN110521002B - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN110521002B
CN110521002B CN201880023964.4A CN201880023964A CN110521002B CN 110521002 B CN110521002 B CN 110521002B CN 201880023964 A CN201880023964 A CN 201880023964A CN 110521002 B CN110521002 B CN 110521002B
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China
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semiconductor region
insulating film
view
region
semiconductor
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CN201880023964.4A
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Chinese (zh)
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CN110521002A (zh
Inventor
森川贵博
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Meibeiya Power Semiconductor Co ltd
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Hitachi Power Semiconductor Device Ltd
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Publication of CN110521002A publication Critical patent/CN110521002A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thyristors (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN201880023964.4A 2017-07-18 2018-05-29 半导体器件及其制造方法 Active CN110521002B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017-138766 2017-07-18
JP2017138766A JP6858091B2 (ja) 2017-07-18 2017-07-18 半導体装置およびその製造方法
PCT/JP2018/020457 WO2019017076A1 (ja) 2017-07-18 2018-05-29 半導体装置およびその製造方法

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CN110521002A CN110521002A (zh) 2019-11-29
CN110521002B true CN110521002B (zh) 2022-11-11

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CN (1) CN110521002B (https=)
WO (1) WO2019017076A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2025022836A1 (https=) * 2023-07-24 2025-01-30

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5883412A (en) * 1994-07-14 1999-03-16 Sgs-Thomson Microelectronics S.R.L. Low gate resistance high-speed MOS-technology integrated structure
JP2004039744A (ja) * 2002-07-01 2004-02-05 Nissan Motor Co Ltd 炭化珪素半導体装置の製造方法、及びその製造方法によって製造される炭化珪素半導体装置
JP2013042075A (ja) * 2011-08-19 2013-02-28 Hitachi Ltd 半導体装置および半導体装置の製造方法
WO2014207856A1 (ja) * 2013-06-26 2014-12-31 株式会社日立製作所 炭化珪素半導体装置およびその製造方法
CN106104806A (zh) * 2013-09-20 2016-11-09 莫诺利斯半导体有限公司 高压mosfet器件及其制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0834312B2 (ja) * 1988-12-06 1996-03-29 富士電機株式会社 縦形電界効果トランジスタ
TW218424B (https=) * 1992-05-21 1994-01-01 Philips Nv
EP0841702A1 (en) * 1996-11-11 1998-05-13 STMicroelectronics S.r.l. Lateral or vertical DMOSFET with high breakdown voltage
JP3981028B2 (ja) * 2002-09-11 2007-09-26 株式会社東芝 半導体装置
JP6168732B2 (ja) * 2012-05-11 2017-07-26 株式会社日立製作所 炭化珪素半導体装置およびその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5883412A (en) * 1994-07-14 1999-03-16 Sgs-Thomson Microelectronics S.R.L. Low gate resistance high-speed MOS-technology integrated structure
JP2004039744A (ja) * 2002-07-01 2004-02-05 Nissan Motor Co Ltd 炭化珪素半導体装置の製造方法、及びその製造方法によって製造される炭化珪素半導体装置
JP2013042075A (ja) * 2011-08-19 2013-02-28 Hitachi Ltd 半導体装置および半導体装置の製造方法
WO2014207856A1 (ja) * 2013-06-26 2014-12-31 株式会社日立製作所 炭化珪素半導体装置およびその製造方法
CN106104806A (zh) * 2013-09-20 2016-11-09 莫诺利斯半导体有限公司 高压mosfet器件及其制造方法

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JP6858091B2 (ja) 2021-04-14
JP2019021761A (ja) 2019-02-07
CN110521002A (zh) 2019-11-29
WO2019017076A1 (ja) 2019-01-24

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