JP6815096B2 - 剥離装置 - Google Patents

剥離装置 Download PDF

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Publication number
JP6815096B2
JP6815096B2 JP2016098780A JP2016098780A JP6815096B2 JP 6815096 B2 JP6815096 B2 JP 6815096B2 JP 2016098780 A JP2016098780 A JP 2016098780A JP 2016098780 A JP2016098780 A JP 2016098780A JP 6815096 B2 JP6815096 B2 JP 6815096B2
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JP
Japan
Prior art keywords
support
layer
peeling
light emitting
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016098780A
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English (en)
Japanese (ja)
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JP2016224430A5 (enExample
JP2016224430A (ja
Inventor
早紀 江口
早紀 江口
幸市 武島
幸市 武島
広樹 安達
広樹 安達
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2016224430A publication Critical patent/JP2016224430A/ja
Publication of JP2016224430A5 publication Critical patent/JP2016224430A5/ja
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
    • B32B43/006—Delaminating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/0007—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding involving treatment or provisions in order to avoid deformation or air inclusion, e.g. to improve surface quality
    • B32B37/003—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding involving treatment or provisions in order to avoid deformation or air inclusion, e.g. to improve surface quality to avoid air inclusion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/16—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating
    • B32B37/22—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating involving the assembly of both discrete and continuous layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/10—Removing layers, or parts of layers, mechanically or chemically
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7426—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • H10P72/7444—Separation by peeling using a peeling wedge, a knife or a bar
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • H10P72/7446—Separation by peeling using a peeling wheel

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2016098780A 2015-05-27 2016-05-17 剥離装置 Active JP6815096B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015107024 2015-05-27
JP2015107024 2015-05-27

Publications (3)

Publication Number Publication Date
JP2016224430A JP2016224430A (ja) 2016-12-28
JP2016224430A5 JP2016224430A5 (enExample) 2019-06-13
JP6815096B2 true JP6815096B2 (ja) 2021-01-20

Family

ID=57398002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016098780A Active JP6815096B2 (ja) 2015-05-27 2016-05-17 剥離装置

Country Status (2)

Country Link
US (1) US9849660B2 (enExample)
JP (1) JP6815096B2 (enExample)

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KR102377794B1 (ko) * 2015-07-06 2022-03-23 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
JP2018005004A (ja) * 2016-07-04 2018-01-11 株式会社ジャパンディスプレイ 表示装置
CN110476238B (zh) * 2017-01-30 2023-04-18 株式会社新川 拾取装置以及拾取方法
TWI685905B (zh) * 2017-07-12 2020-02-21 日商新川股份有限公司 接合裝置和接合方法
CN107464893A (zh) * 2017-07-31 2017-12-12 武汉华星光电半导体显示技术有限公司 柔性显示器件的制备方法、柔性显示器件及显示器
CN107528009B (zh) 2017-08-17 2020-02-28 武汉华星光电半导体显示技术有限公司 柔性基板剥离装置及剥离方法
WO2019059057A1 (ja) * 2017-09-20 2019-03-28 日本電気硝子株式会社 ガラス基板の製造方法
US10978651B2 (en) 2017-10-26 2021-04-13 Sakai Display Products Corporation Method and apparatus for producing flexible OLED device
JP6505877B1 (ja) * 2018-01-04 2019-04-24 日東電工株式会社 切目を有する長尺の光学フィルムを搬送する搬送装置、並びに、光学表示パネルの連続製造システム
US11158804B2 (en) 2018-05-09 2021-10-26 Sakai Display Products Corporation Method and apparatus for manufacturing flexible light emitting device
WO2019215829A1 (ja) 2018-05-09 2019-11-14 堺ディスプレイプロダクト株式会社 フレキシブル発光デバイスの製造方法および製造装置
US11088122B2 (en) 2018-05-09 2021-08-10 Sakai Display Products Corporation Method and device for manufacturing flexible light emission device
US11430677B2 (en) 2018-10-30 2022-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer taping apparatus and method
KR102696647B1 (ko) * 2018-11-09 2024-08-22 삼성디스플레이 주식회사 플렉서블 표시 장치 및 그 제조 방법
JP7641087B2 (ja) * 2018-12-20 2025-03-06 日本電気硝子株式会社 ガラスフィルムの製造方法及び製造装置、並びにガラスフィルムを含む電子デバイスの製造方法
CN110383460B (zh) * 2019-05-21 2021-11-30 京东方科技集团股份有限公司 柔性电子基板的制作方法及基板结构
JP7057335B2 (ja) * 2019-10-29 2022-04-19 キヤノントッキ株式会社 基板保持装置、基板処理装置、基板保持方法、成膜方法、及び電子デバイスの製造方法
CN111531657B (zh) * 2020-05-07 2022-04-29 江苏金圣硅基新材料研究院有限公司 一种提高木质家具外表美观度的方法
KR102456864B1 (ko) 2020-08-18 2022-10-21 (주) 엔지온 반도체 칩 디라미네이션 장치
JP2023048802A (ja) * 2021-09-28 2023-04-07 株式会社東京精密 シート剥離装置

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JP6548871B2 (ja) 2014-05-03 2019-07-24 株式会社半導体エネルギー研究所 積層体の基板剥離装置
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JP6378530B2 (ja) 2014-05-03 2018-08-22 株式会社半導体エネルギー研究所 フィルム吸着機構
CN106415814B (zh) 2014-05-03 2019-10-11 株式会社半导体能源研究所 薄膜状部件支撑设备
JP2016021560A (ja) 2014-06-20 2016-02-04 株式会社半導体エネルギー研究所 剥離装置

Also Published As

Publication number Publication date
US9849660B2 (en) 2017-12-26
JP2016224430A (ja) 2016-12-28
US20160347047A1 (en) 2016-12-01

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