JP6808282B2 - インターポーザの製造方法 - Google Patents
インターポーザの製造方法 Download PDFInfo
- Publication number
- JP6808282B2 JP6808282B2 JP2016242236A JP2016242236A JP6808282B2 JP 6808282 B2 JP6808282 B2 JP 6808282B2 JP 2016242236 A JP2016242236 A JP 2016242236A JP 2016242236 A JP2016242236 A JP 2016242236A JP 6808282 B2 JP6808282 B2 JP 6808282B2
- Authority
- JP
- Japan
- Prior art keywords
- glass substrate
- interposer
- laminated body
- cutting groove
- forming step
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 239000000758 substrate Substances 0.000 claims description 139
- 239000011521 glass Substances 0.000 claims description 108
- 238000005520 cutting process Methods 0.000 claims description 86
- 238000000034 method Methods 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 35
- 239000011148 porous material Substances 0.000 claims description 9
- 238000012986 modification Methods 0.000 description 12
- 230000004048 modification Effects 0.000 description 12
- 238000012545 processing Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 6
- 230000001678 irradiating effect Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000001351 cycling effect Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000007630 basic procedure Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016242236A JP6808282B2 (ja) | 2016-12-14 | 2016-12-14 | インターポーザの製造方法 |
TW106138540A TWI743244B (zh) | 2016-12-14 | 2017-11-08 | 中介載板的製造方法 |
KR1020170166942A KR20180068862A (ko) | 2016-12-14 | 2017-12-06 | 인터포저의 제조 방법 |
CN201711282902.9A CN108231570A (zh) | 2016-12-14 | 2017-12-07 | 中介层的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016242236A JP6808282B2 (ja) | 2016-12-14 | 2016-12-14 | インターポーザの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018098379A JP2018098379A (ja) | 2018-06-21 |
JP6808282B2 true JP6808282B2 (ja) | 2021-01-06 |
Family
ID=62633129
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016242236A Active JP6808282B2 (ja) | 2016-12-14 | 2016-12-14 | インターポーザの製造方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6808282B2 (zh) |
KR (1) | KR20180068862A (zh) |
CN (1) | CN108231570A (zh) |
TW (1) | TWI743244B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7164411B2 (ja) * | 2018-11-15 | 2022-11-01 | 株式会社ディスコ | 積層体の加工方法 |
JP7164412B2 (ja) * | 2018-11-16 | 2022-11-01 | 株式会社ディスコ | 積層体の加工方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6617681B1 (en) | 1999-06-28 | 2003-09-09 | Intel Corporation | Interposer and method of making same |
JP2005012203A (ja) * | 2003-05-29 | 2005-01-13 | Hamamatsu Photonics Kk | レーザ加工方法 |
JP5352624B2 (ja) * | 2005-11-10 | 2013-11-27 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5608521B2 (ja) * | 2010-11-26 | 2014-10-15 | 新光電気工業株式会社 | 半導体ウエハの分割方法と半導体チップ及び半導体装置 |
JP6151557B2 (ja) * | 2013-05-13 | 2017-06-21 | 株式会社ディスコ | レーザー加工方法 |
JP6246534B2 (ja) * | 2013-09-11 | 2017-12-13 | 株式会社ディスコ | ウエーハの加工方法 |
JP2015198212A (ja) | 2014-04-03 | 2015-11-09 | 凸版印刷株式会社 | ガラスインターポーザ |
JP2015207580A (ja) * | 2014-04-17 | 2015-11-19 | 凸版印刷株式会社 | 配線基板およびその製造方法 |
-
2016
- 2016-12-14 JP JP2016242236A patent/JP6808282B2/ja active Active
-
2017
- 2017-11-08 TW TW106138540A patent/TWI743244B/zh active
- 2017-12-06 KR KR1020170166942A patent/KR20180068862A/ko not_active IP Right Cessation
- 2017-12-07 CN CN201711282902.9A patent/CN108231570A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
TW201826455A (zh) | 2018-07-16 |
TWI743244B (zh) | 2021-10-21 |
JP2018098379A (ja) | 2018-06-21 |
CN108231570A (zh) | 2018-06-29 |
KR20180068862A (ko) | 2018-06-22 |
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