TWI824139B - 層積晶圓之加工方法 - Google Patents

層積晶圓之加工方法 Download PDF

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TWI824139B
TWI824139B TW109113519A TW109113519A TWI824139B TW I824139 B TWI824139 B TW I824139B TW 109113519 A TW109113519 A TW 109113519A TW 109113519 A TW109113519 A TW 109113519A TW I824139 B TWI824139 B TW I824139B
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wafers
sheet
thermocompression bonding
wafer
laminated
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原田成規
淀良彰
渡部晃司
趙金艶
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日商迪思科股份有限公司
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Abstract

[課題]提供一種層積晶圓之加工方法，能正確地去除至少層積為2層的層積晶圓其中之一的晶圓之外周部中的倒角部。[解決手段]一種層積晶圓之加工方法，加工至少層積為2層的層積晶圓其中之一的晶圓，其包含下列步驟：薄片鋪設步驟，將熱壓接薄片鋪設在其中之一的晶圓的上表面；熱壓接步驟，將熱壓接薄片熱壓接在其中之一的晶圓形成有倒角部之外周部；改質層形成步驟，將波長對熱壓接薄片與其中之一的晶圓具有穿透性之雷射光線的聚光點從熱壓接薄片側定位在其中之一的晶圓之外周部的內部並照射雷射光線，而在其中之一的晶圓的內部連續地形成改質層；以及倒角部去除步驟，擴張熱壓接薄片以破壞倒角部，而將倒角部從其中之一的晶圓去除。

Description

層積晶圓之加工方法
本發明係關於一種層積晶圓之加工方法，加工至少層積為2層的層積晶圓其中之一的晶圓。
IC、LSI等多個元件由交叉的多條分割預定線所劃分並形成在正面之晶圓，在背面被研削而加工成所要的厚度後，會由切割裝置分割成一個個元件晶片，而分割後的元件晶片則利用在行動電話、電腦等的電氣設備。
但是，在晶圓外周的端部形成有倒角部，會有後述的問題：當研削晶圓的背面使厚度變為一半以下時，剩餘的倒角部會導致在外周形成如小刀般銳利的刀緣，並從該刀緣產生裂痕而使晶圓裂開。為解決此問題，已提出一種技術，其使用切割刀片去除晶圓的外周中形成有倒角部的區域（參照專利文獻1）。 [習知技術文獻] [專利文獻]
[專利文獻1]日本特開2000-173961號公報
藉由上述專利文獻1所記載的技術，在使用切割刀片對由單一材質所構成的晶圓去除上述形成有倒角部的區域的情況，能良好地去除該倒角部。然而，當對貼合多個晶圓而形成的層積晶圓實施此技術時，則會有在層積的晶圓間殘留些微的縫隙的情況，而產生後述的問題：因藉由切割刀片實施切削外周部的加工時的細微振動，導致在構成層積晶圓的晶圓之外周會產生裂痕等的損傷。
因此，本發明目的在於提供一種層積晶圓之加工方法，能正確地去除至少層積為2層的層積晶圓其中之一的晶圓之外周部中的倒角部。
若根據本發明，係提供一種層積晶圓之加工方法，加工至少層積為2層的層積晶圓其中之一的晶圓，其具備下列步驟：薄片鋪設步驟，將熱壓接薄片鋪設在其中之一的晶圓的上表面；熱壓接步驟，將熱壓接薄片熱壓接在該其中之一的晶圓形成有倒角部之外周部；改質層形成步驟，將波長對該熱壓接薄片與該其中之一的晶圓具有穿透性之雷射光線的聚光點從該熱壓接薄片側定位在該其中之一的晶圓之外周部的內部並照射該雷射光線，而在該其中之一的晶圓的該內部連續地形成改質層；以及倒角部去除步驟，在實施該改質層形成步驟後，擴張該熱壓接薄片以破壞該倒角部，而將該倒角部從該其中之一的晶圓去除。
較佳為，層積晶圓之加工方法還具備：研削步驟，在該倒角部去除步驟後，研削該其中之一的晶圓的上表面而加工成所要的厚度。較佳為，該熱壓接薄片包含聚烯烴類薄片或聚酯類薄片。較佳為，在熱壓接薄片為聚烯烴類薄片的情況，則包含聚乙烯薄片、聚丙烯薄片或聚苯乙烯薄片中任一者，而在熱壓接薄片為聚酯類薄片的情況，則包含聚對苯二甲酸乙二酯薄片或聚萘二甲酸乙二酯薄片中任一者。
若根據本發明，在其中之一的晶圓的外周不會產生裂痕，並能適當地去除層積晶圓的該其中之一的晶圓的倒角部。
以下，針對本發明實施方式的層積晶圓之加工方法一邊參照隨附圖式一邊詳細地說明。
在圖1係記載由本實施方式的層積晶圓之加工方法所加工的層積晶圓10。層積晶圓10例如是將構成其中之一的晶圓的第一晶圓12與構成其中之另一的晶圓的第二晶圓14層積而構成。第一晶圓12例如是由矽晶(Si)所形成的母晶圓。第二晶圓14則是由矽晶基板所形成的晶圓，該矽晶基板上多個元件16由交叉的多條分割預定線18所劃分並形成在正面14A。層積晶圓10係第二晶圓14的背面14B透過接著層接著並層積在第一晶圓12的正面12A上而構成。附帶一提的是，由本發明的加工方法所加工的層積晶圓10並非限定為由上述材料所構成，能將藍寶石基板、玻璃基板、LN(鈮酸鋰)基板等一般習知的晶圓作為對象，更進一步，並非限定為由相同材料的晶圓組合而成的層積晶圓，亦可為由相異材料的晶圓組合而成。
在圖1(c)係表示層積晶圓10的局部放大剖面圖。如圖1(c)所示，在第一晶圓12之外周部12b的側方端部係形成有圓形地倒角的倒角部12a。同樣地，在第二晶圓14之外周部14b的側方端部形成有圓形地倒角的倒角部14a。
在準備了上述層積晶圓10後，則如圖1(b)所示將層積晶圓10反轉，使要施以加工的其中之一的晶圓即第一晶圓12的背面12B朝向上方並作為上表面後，實施將熱壓接薄片鋪設在第一晶圓12的上表面(背面12B)的薄片鋪設步驟。
在實施該薄片鋪設步驟時，如圖2所示，準備形成為比層積晶圓10還大張的熱壓接薄片20。熱壓接薄片20為具有伸縮性，並藉由加熱至構成熱壓接薄片20的材料的熔融溫度而發揮黏著性，且在加熱後即使溫度降低仍會維持黏著性的薄片。具備如此特性的熱壓接薄片20係包含聚烯烴類薄片或聚酯類薄片。在採用聚烯烴類薄片作為熱壓接薄片20的情況，能選擇由聚乙烯薄片、聚丙烯薄片或聚苯乙烯薄片中任一者所構成的薄片。更進一步，在採用聚酯類薄片作為熱壓接薄片20的情況，可選擇由聚對苯二甲酸乙二酯薄片或聚萘二甲酸乙二酯薄片所構成的薄片。附帶一提的是，作為構成本實施方式的熱壓接薄片20的材料，係選擇了聚乙烯薄片。
在準備了上述熱壓接薄片20後，則將層積晶圓10保持在構成為可旋轉的未圖示的工作台，並如圖2所示，將熱壓接薄片20鋪設在第一晶圓12的上表面（薄片鋪設步驟）。
在實施該薄片鋪設步驟後，實施熱壓接步驟，其將熱壓接薄片20熱壓接在形成有第一晶圓12的倒角部12a之外周部12b上。一邊參照圖3一邊針對該熱壓接步驟進行說明。
在實施該熱壓接步驟時，如圖3（a）、（b）所示，例如是準備加熱桿30。加熱桿30係由陶瓷所構成，並構成為內建有未圖示的電熱器與溫度感測器，藉由對該電熱器通電，而能將下端部32控制在所要的溫度。加熱桿30的下端部32的下表面32a係形成為平坦狀，考量到與熱壓接薄片20的滑動難易度，較佳為事先塗佈有氟樹脂。
在熱壓接步驟，係將加熱桿30的下端部32定位在層積晶圓10的第一晶圓12形成有倒角部12a之外周部12b的上方。在將加熱桿30定位在外周部12b上之後，使加熱桿30下降，並如圖3（b）所示，一邊以預定的壓力藉由下表面32a推抵熱壓接薄片20，一邊以預定的速度使層積晶圓10往圖3（a）中箭號R1所示的方向緩慢地旋轉。由加熱桿30所加熱的熱壓接薄片20的溫度會升溫至達到聚乙烯的熔融溫度的160℃～200℃左右。而在像這樣被加熱的熱壓接薄片20中與第一晶圓12的接著面22會發揮黏著性，並如圖3（b）所示，扣除第一晶圓12的中央區域之外周部12b與熱壓接薄片20會透過接著面22而接著。附帶一提的是，該中央區域指的是對應後述區域的區域：包含在第二晶圓14的正面14A上形成有元件16的元件區域。亦即，第一晶圓12與熱壓接薄片20只有在圍繞形成在第二晶圓14上之元件區域的外側區域中被接著（熱壓接步驟）。
在實施該熱壓接步驟後，實施改質層形成步驟，其將波長對熱壓接薄片20與第一晶圓12具有穿透性之雷射光線的聚光點從熱壓接薄片20側定位在第一晶圓12之外周部12b的內部並照射，而在該內部連續地形成改質層。以下，針對該改質層形成步驟一邊參照圖4一邊進行說明。
在實施該改質層形成步驟時，如圖4（a）所示，將熱壓接有熱壓接薄片20的層積晶圓10搬送至雷射加工裝置40（只表示局部），並保持在構成為可旋轉的未圖示的保持台。在雷射加工裝置40係配設有照射波長對熱壓接薄片20與第一晶圓12具有穿透性之脈衝雷射光線的雷射光線照射單元42。
在將層積晶圓10的第二晶圓14側保持在雷射加工裝置40的該保持台的狀態，將雷射光線照射單元42定位在第一晶圓12之外周部12b的上方。接著，將雷射光線的聚光點越過熱壓接薄片20而定位在第一晶圓12之外周部12b的內部，並一邊照射雷射光線LB，一邊使層積晶圓10與該保持台一同往箭號R2所示的方向旋轉。藉此，在第一晶圓12之外周部12b的內部連續地形成改質層100（在圖4（a）係以虛線表示）。附帶一提的是，此改質層100較佳為從上方觀看呈沿著對應接著於第一晶圓12之熱壓接薄片20的接著面22的內周位置之區域而形成。更進一步，雖並非必要，較佳為將用以在圓周方向細部分割第一晶圓12的外周部12b之輔助改質層110（在圖4（a）中係於半徑方向以虛線表示）形成在外周部12b的內部。
實施上述改質層形成步驟時的雷射加工條件例如是設定為以下所述。 波長                  ：1064nm或1342nm。 平均輸出          ：0.5～2.0W。 重複頻率          ：60～90kHz。 加工進給速度  ：200～1000mm／秒。
如上述，在實施改質層形成步驟後，實施倒角部去除步驟，其擴張熱壓接薄片20以破壞第一晶圓12的倒角部12a，而將倒角部12a從第一晶圓12去除。一邊參照圖5與圖6一邊說明該倒角部去除步驟。
熱壓接薄片20如圖5所示，形成為比層積晶圓10還大張，藉由力量P將熱壓接薄片20中比接著面22還外側的區域朝向外側擴張。熱壓接薄片20與第一晶圓12係透過熱壓接薄片20的接著面22而接著，藉由將熱壓接薄片20如上述般擴張，包含第一晶圓12的倒角部12a之外周部12b會沿著改質層100與輔助改質層110斷裂，從而倒角部12a會被破壞。
在第一晶圓12的倒角部12a沿著改質層100與輔助改質層110斷裂後，則如圖6所示，使熱壓接薄片20從第一晶圓12的上表面（背面12B）分離。如上述，因為第一晶圓12的中央區域與熱壓接薄片20並未接著，只有具備倒角部12a的外周部12b與熱壓接薄片20壓接，所以可將倒角部12a從構成層積晶圓10的第一晶圓12去除。像這樣藉由去除構成層積晶圓10的第一晶圓12的倒角部12a，從第一晶圓12側觀看，第二晶圓14的背面14B的外周會露出在上方（倒角部去除步驟）。
在本實施形方式態，實施該倒角部去除步驟後，還包含研削步驟，其對第一晶圓12研削上表面（背面12B）而加工成所要的厚度。在實施該研削步驟時，係將施以上述倒角部去除步驟的層積晶圓10搬送至圖7所示的研削裝置50（只表示局部）。在研削裝置50配設有：卡盤台52；旋轉主軸54，由未圖示的旋轉驅動機構所旋轉；安裝機56，裝設在旋轉主軸54的下端；以及研削磨石58，環狀地配設在組裝於安裝機56之研削輪的下表面。
在將層積晶圓10搬送至研削裝置50後，則如圖7所示，使第一晶圓12的背面12B側朝向上方，使第二晶圓14側朝向下方，並透過保護膠膜T而載置並保持在卡盤台52上。在將層積晶圓10保持在卡盤台52後，則使卡盤台52往圖中箭號R3所示的方向例如以300rpm旋轉，同時使旋轉主軸54往圖中箭號R4所示的方向例如以6000rpm旋轉。然後，使研削磨石58接觸第一晶圓12的背面12B，並例如以1μm／秒的研削進給速度朝向下方研削進給。此時，能利用未圖示的接觸式或非接觸式的厚度測量裝置一邊測量第一晶圓12（或層積晶圓10）的厚度一邊進行研削，待研削第一晶圓12的背面12B從而層積晶圓10成為所要的厚度，則結束該研削步驟。
如上述，若根據本實施方式，將熱壓接薄片20熱壓接在層積晶圓10其中之一的晶圓（第一晶圓12）形成有倒角部12a之外周部12b，再將波長對熱壓接薄片20與第一晶圓12具有穿透性之雷射光線LB的聚光點從熱壓接薄片20側定位在第一晶圓12之外周部12b的內部並照射，而在內部連續地形成改質層100，並擴張熱壓接薄片20以破壞倒角部12a，而將倒角部12a從第一晶圓12去除，所以在第一晶圓12的外周不會產生裂痕，而能適當地去除倒角部12a為。
在上述實施方式，係藉由層積2個晶圓（第一晶圓12與第二晶圓14）而形成層積晶圓10，惟本發明並非限定為此，亦可層積3個以上的晶圓而形成。
10:層積晶圓 12:第一晶圓 12a:倒角部 12b:外周部 14:第二晶圓 14a:倒角部 14b:外周部 16:元件 18:分割預定線 20:熱壓接薄片 22:接著面 30:加熱桿 32:下端部 32a:下表面 40:雷射加工裝置 42:雷射光線照射單元 50:研削裝置 52:卡盤台 58:研削磨石 100:改質層 110:輔助改質層
圖1(a)係表示層積晶圓之一例的正面側立體圖，圖1(b)係其背面側立體圖，圖1(c)係局部放大剖面圖。
圖2(a)係用以說明薄片鋪設步驟的分解立體圖，圖2(b)係其立體圖。
圖3(a)係表示熱壓接步驟之實施態樣的立體圖，圖3(b)係熱壓接步驟中的局部放大剖面圖。
圖4(a)係表示改質層形成步驟之實施態樣的立體圖，圖4(b)係改質層形成步驟中的局部放大剖面圖。
圖5係表示在倒角部去除步驟中擴張熱壓接薄片之態樣的立體圖。
圖6係表示在倒角部去除步驟中將熱壓接薄片從層積晶圓分離的態樣的立體圖。
圖7(a)係表示研削步驟之實施態樣的立體圖，圖7(b)係研削步驟中的局部放大側視圖。
10:層積晶圓
12:第一晶圓
12a:倒角部
12b:外周部
12B:背面
14:第二晶圓
14a:倒角部
20:熱壓接薄片
22:接著面
40:雷射加工裝置
42:雷射光線照射單元
100:改質層
110:輔助改質層
LB:雷射光線
R2:箭號

Claims (4)

  1. 一種層積晶圓之加工方法，加工至少層積為2層的層積晶圓其中之一的晶圓，其具備下列步驟： 薄片鋪設步驟，將熱壓接薄片鋪設在其中之一的晶圓的上表面； 熱壓接步驟，將熱壓接薄片熱壓接在該其中之一的晶圓形成有倒角部之外周部； 改質層形成步驟，將波長對該熱壓接薄片與該其中之一的晶圓具有穿透性之雷射光線的聚光點從該熱壓接薄片側定位在該其中之一的晶圓之外周部的內部並照射該雷射光線，而在該其中之一的晶圓的該內部連續地形成改質層；以及 倒角部去除步驟，在實施該改質層形成步驟後，擴張該熱壓接薄片以破壞該倒角部，而將該倒角部從該其中之一的晶圓去除。
  2. 如請求項1之層積晶圓之加工方法，其中還具備： 研削步驟，在該倒角部去除步驟後，研削該其中之一的晶圓的上表面而加工成所要的厚度。
  3. 如請求項1或2之層積晶圓之加工方法，其中， 該熱壓接薄片包含聚烯烴類薄片或聚酯類薄片。
  4. 如請求項3之層積晶圓之加工方法，其中， 該聚烯烴類薄片包含聚乙烯薄片、聚丙烯薄片或聚苯乙烯薄片中任一者，該聚酯類薄片包含聚對苯二甲酸乙二酯薄片或聚萘二甲酸乙二酯薄片中任一者。
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