JP6806774B2 - 基板間ｌｅｄ移送のための、孤立ｉｉｉ族窒化物光アイランド上のレーザリフトオフ - Google Patents

基板間ｌｅｄ移送のための、孤立ｉｉｉ族窒化物光アイランド上のレーザリフトオフ Download PDF

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JP6806774B2
JP6806774B2 JP2018529267A JP2018529267A JP6806774B2 JP 6806774 B2 JP6806774 B2 JP 6806774B2 JP 2018529267 A JP2018529267 A JP 2018529267A JP 2018529267 A JP2018529267 A JP 2018529267A JP 6806774 B2 JP6806774 B2 JP 6806774B2
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light emitting
emitting device
conductive adhesive
backplane
substrate
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JP2018538696A (ja
JP2018538696A5 (show.php
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ダニエル ブライス トンプソン，
ダニエル ブライス トンプソン，
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    • H10W90/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H10P90/1916—
    • H10W10/181—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H10W72/072—
    • H10W72/07204—

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Led Device Packages (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Manufacturing & Machinery (AREA)
JP2018529267A 2015-12-07 2016-10-31 基板間ｌｅｄ移送のための、孤立ｉｉｉ族窒化物光アイランド上のレーザリフトオフ Active JP6806774B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562263955P 2015-12-07 2015-12-07
US62/263,955 2015-12-07
PCT/US2016/059736 WO2017099905A1 (en) 2015-12-07 2016-10-31 Laser lift-off on isolated iii-nitride light islands for inter-substrate led transfer

Publications (3)

Publication Number Publication Date
JP2018538696A JP2018538696A (ja) 2018-12-27
JP2018538696A5 JP2018538696A5 (show.php) 2019-12-05
JP6806774B2 true JP6806774B2 (ja) 2021-01-06

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JP2018529267A Active JP6806774B2 (ja) 2015-12-07 2016-10-31 基板間ｌｅｄ移送のための、孤立ｉｉｉ族窒化物光アイランド上のレーザリフトオフ

Country Status (4)

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US (2) US9941262B2 (show.php)
EP (1) EP3387882B1 (show.php)
JP (1) JP6806774B2 (show.php)
WO (1) WO2017099905A1 (show.php)

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US10229899B2 (en) 2019-03-12
WO2017099905A1 (en) 2017-06-15
EP3387882B1 (en) 2021-05-12
JP2018538696A (ja) 2018-12-27
US9941262B2 (en) 2018-04-10
US20170162552A1 (en) 2017-06-08
US20180190633A1 (en) 2018-07-05
EP3387882A4 (en) 2019-10-16
EP3387882A1 (en) 2018-10-17

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