JP6806774B2 - 基板間ｌｅｄ移送のための、孤立ｉｉｉ族窒化物光アイランド上のレーザリフトオフ - Google Patents
基板間ｌｅｄ移送のための、孤立ｉｉｉ族窒化物光アイランド上のレーザリフトオフ Download PDFInfo
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- JP6806774B2 JP6806774B2 JP2018529267A JP2018529267A JP6806774B2 JP 6806774 B2 JP6806774 B2 JP 6806774B2 JP 2018529267 A JP2018529267 A JP 2018529267A JP 2018529267 A JP2018529267 A JP 2018529267A JP 6806774 B2 JP6806774 B2 JP 6806774B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562263955P | 2015-12-07 | 2015-12-07 | |
| US62/263,955 | 2015-12-07 | ||
| PCT/US2016/059736 WO2017099905A1 (en) | 2015-12-07 | 2016-10-31 | Laser lift-off on isolated iii-nitride light islands for inter-substrate led transfer |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018538696A JP2018538696A (ja) | 2018-12-27 |
| JP2018538696A5 JP2018538696A5 (enExample) | 2019-12-05 |
| JP6806774B2 true JP6806774B2 (ja) | 2021-01-06 |
Family
ID=58800382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018529267A Active JP6806774B2 (ja) | 2015-12-07 | 2016-10-31 | 基板間ｌｅｄ移送のための、孤立ｉｉｉ族窒化物光アイランド上のレーザリフトオフ |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US9941262B2 (enExample) |
| EP (1) | EP3387882B1 (enExample) |
| JP (1) | JP6806774B2 (enExample) |
| WO (1) | WO2017099905A1 (enExample) |
Families Citing this family (74)
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| US12402466B2 (en) | 2015-01-23 | 2025-08-26 | Vuereal Inc. | Micro device integration into system substrate |
| US10134803B2 (en) * | 2015-01-23 | 2018-11-20 | Vuereal Inc. | Micro device integration into system substrate |
| CN107851586B (zh) | 2015-01-23 | 2021-07-06 | 维耶尔公司 | 到受体衬底的选择性微型器件转移 |
| JP6806774B2 (ja) | 2015-12-07 | 2021-01-06 | グロ アーベーＧｌｏ Ａｂ | 基板間ｌｅｄ移送のための、孤立ｉｉｉ族窒化物光アイランド上のレーザリフトオフ |
| US20170215280A1 (en) | 2016-01-21 | 2017-07-27 | Vuereal Inc. | Selective transfer of micro devices |
| KR101754528B1 (ko) * | 2016-03-23 | 2017-07-06 | 한국광기술원 | 건식 접착구조를 갖는 ｌｅｄ 구조체 어레이의 전사체와 이를 이용한 ｌｅｄ 구조체 어레이의 이송방법 및 ｌｅｄ 구조체 |
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| EP3443594A4 (en) | 2016-04-15 | 2019-12-18 | Glo Ab | METHOD FOR GENERATING AN ARRANGEMENT FROM A UNIT WITH MULTIPLE CELLS |
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| JP4233801B2 (ja) * | 2002-04-08 | 2009-03-04 | 士郎 酒井 | ＩｎＧａＮ系化合物半導体発光装置の製造方法 |
| JP2004014938A (ja) | 2002-06-10 | 2004-01-15 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP4617846B2 (ja) * | 2004-11-19 | 2011-01-26 | ソニー株式会社 | 半導体発光装置、その製造方法、及び画像表示装置の製造方法 |
| TWI244228B (en) * | 2005-02-03 | 2005-11-21 | United Epitaxy Co Ltd | Light emitting device and manufacture method thereof |
| US8409672B2 (en) * | 2008-04-24 | 2013-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device |
| US8367544B2 (en) * | 2009-10-20 | 2013-02-05 | International Business Machines Corporation | Self-aligned patterned etch stop layers for semiconductor devices |
| US8334152B2 (en) * | 2009-12-18 | 2012-12-18 | Cooledge Lighting, Inc. | Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate |
| US8232117B2 (en) * | 2010-04-30 | 2012-07-31 | Koninklijke Philips Electronics N.V. | LED wafer with laminated phosphor layer |
| JP5665511B2 (ja) * | 2010-12-10 | 2015-02-04 | 株式会社東芝 | 半導体装置の製造方法、製造プログラム、および製造装置 |
| CN102903804B (zh) * | 2011-07-25 | 2015-12-16 | 财团法人工业技术研究院 | 发光元件的转移方法以及发光元件阵列 |
| JP2013211443A (ja) | 2012-03-30 | 2013-10-10 | Toyohashi Univ Of Technology | 発光装置の製造方法 |
| FR3001334B1 (fr) * | 2013-01-24 | 2016-05-06 | Centre Nat De La Rech Scient (Cnrs) | Procede de fabrication de diodes blanches monolithiques |
| KR102032158B1 (ko) | 2014-12-19 | 2019-10-15 | 글로 에이비 | 백플레인 상의 발광 다이오드 어레이 및 그의 제조 방법 |
| JP6806774B2 (ja) | 2015-12-07 | 2021-01-06 | グロ アーベーＧｌｏ Ａｂ | 基板間ｌｅｄ移送のための、孤立ｉｉｉ族窒化物光アイランド上のレーザリフトオフ |
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- 2016-10-31 EP EP16873530.6A patent/EP3387882B1/en active Active
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|---|---|
| EP3387882A4 (en) | 2019-10-16 |
| US10229899B2 (en) | 2019-03-12 |
| US20170162552A1 (en) | 2017-06-08 |
| EP3387882B1 (en) | 2021-05-12 |
| WO2017099905A1 (en) | 2017-06-15 |
| EP3387882A1 (en) | 2018-10-17 |
| US9941262B2 (en) | 2018-04-10 |
| JP2018538696A (ja) | 2018-12-27 |
| US20180190633A1 (en) | 2018-07-05 |
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