JP6795753B2 - 硬化膜形成用樹脂材料、硬化膜の形成方法、硬化膜、半導体素子及び表示素子 - Google Patents

硬化膜形成用樹脂材料、硬化膜の形成方法、硬化膜、半導体素子及び表示素子 Download PDF

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JP6795753B2
JP6795753B2 JP2015214790A JP2015214790A JP6795753B2 JP 6795753 B2 JP6795753 B2 JP 6795753B2 JP 2015214790 A JP2015214790 A JP 2015214790A JP 2015214790 A JP2015214790 A JP 2015214790A JP 6795753 B2 JP6795753 B2 JP 6795753B2
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group
carbon atoms
cured film
structural unit
atom
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JP2017082173A (ja
Inventor
下川　努
努 下川
増子　英明
英明 増子
松本　英之
英之 松本
裕亮 村田
裕亮 村田
隆太郎 若林
隆太郎 若林
朗人 成子
朗人 成子
杉田　光
光 杉田
大吾 一戸
大吾 一戸
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JSR Corp
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JSR Corp
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Priority to KR1020160138953A priority patent/KR102464649B1/ko
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/10—Esters; Ether-esters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
JP2015214790A 2015-10-30 2015-10-30 硬化膜形成用樹脂材料、硬化膜の形成方法、硬化膜、半導体素子及び表示素子 Active JP6795753B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015214790A JP6795753B2 (ja) 2015-10-30 2015-10-30 硬化膜形成用樹脂材料、硬化膜の形成方法、硬化膜、半導体素子及び表示素子
KR1020160138953A KR102464649B1 (ko) 2015-10-30 2016-10-25 경화막 형성용 수지 재료, 경화막의 형성 방법, 경화막, 반도체 소자 및 표시 소자

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JP2015214790A JP6795753B2 (ja) 2015-10-30 2015-10-30 硬化膜形成用樹脂材料、硬化膜の形成方法、硬化膜、半導体素子及び表示素子

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JP2017082173A JP2017082173A (ja) 2017-05-18
JP6795753B2 true JP6795753B2 (ja) 2020-12-02

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6603115B2 (ja) * 2015-11-27 2019-11-06 信越化学工業株式会社 ケイ素含有縮合物、ケイ素含有レジスト下層膜形成用組成物、及びパターン形成方法
WO2019031114A1 (ja) * 2017-08-10 2019-02-14 Jsr株式会社 重合体、樹脂組成物、樹脂膜、パターン化樹脂膜の製造方法、および電子部品
CN108303851B (zh) * 2018-01-05 2019-09-10 湖北固润科技股份有限公司 包含聚对羟基苯乙烯类氧杂环丁烷树脂作为成膜树脂的光刻胶组合物
JPWO2023100736A1 (ko) * 2021-12-02 2023-06-08

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3965868B2 (ja) 2000-06-12 2007-08-29 Ｊｓｒ株式会社 層間絶縁膜およびマイクロレンズ
JP2012113227A (ja) * 2010-11-26 2012-06-14 Jnc Corp 感光性樹脂組成物、パターン状透明膜、及び表示素子
JP2013020103A (ja) * 2011-07-12 2013-01-31 Mitsubishi Paper Mills Ltd ネガ型感光性平版印刷版
JP2014062978A (ja) * 2012-09-20 2014-04-10 Jnc Corp ポジ型感光性組成物
KR102115817B1 (ko) * 2013-01-16 2020-05-27 제이에스알 가부시끼가이샤 경화막 형성용 열경화성 수지 조성물, 네가티브형 감방사선성 수지 조성물, 포지티브형 감방사선성 수지 조성물, 경화막, 그의 형성 방법, 반도체 소자 및 표시 소자
JP6089743B2 (ja) 2013-02-05 2017-03-08 Jsr株式会社 硬化膜形成用感放射線性樹脂組成物、硬化膜、その形成方法、半導体素子及び表示素子
JP6089931B2 (ja) * 2013-04-26 2017-03-08 大日本印刷株式会社 色材分散液、カラーフィルタ用着色樹脂組成物、カラーフィルタ、液晶表示装置、及び有機発光表示装置
JP6171573B2 (ja) * 2013-05-29 2017-08-02 東洋インキＳｃホールディングス株式会社 感光性樹脂組成物および硬化膜
JP6477477B2 (ja) * 2013-09-06 2019-03-06 日本ゼオン株式会社 感放射線樹脂組成物および電子部品
CN105531627B (zh) * 2013-09-13 2019-10-11 富士胶片株式会社 感光性树脂组合物、硬化膜的制造方法、硬化膜、液晶显示装置及有机el显示装置
JP2015145927A (ja) * 2014-01-31 2015-08-13 Jsr株式会社 表示素子の硬化膜の製造方法、感放射線性樹脂組成物、表示素子の硬化膜、表示素子及び加熱装置

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KR20170051285A (ko) 2017-05-11
JP2017082173A (ja) 2017-05-18

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