JP6791208B2 - 発光素子の製造方法 - Google Patents

発光素子の製造方法 Download PDF

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Publication number
JP6791208B2
JP6791208B2 JP2018097828A JP2018097828A JP6791208B2 JP 6791208 B2 JP6791208 B2 JP 6791208B2 JP 2018097828 A JP2018097828 A JP 2018097828A JP 2018097828 A JP2018097828 A JP 2018097828A JP 6791208 B2 JP6791208 B2 JP 6791208B2
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light emitting
tape
emitting element
manufacturing
layer
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JP2018097828A
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Japanese (ja)
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JP2019204842A (ja
JP2019204842A5 (enrdf_load_stackoverflow
Inventor
石崎　順也
順也 石崎
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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Priority to JP2018097828A priority Critical patent/JP6791208B2/ja
Priority to PCT/JP2019/015989 priority patent/WO2019225206A1/ja
Priority to TW108113626A priority patent/TW202004851A/zh
Publication of JP2019204842A publication Critical patent/JP2019204842A/ja
Publication of JP2019204842A5 publication Critical patent/JP2019204842A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages

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  • Led Device Packages (AREA)
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JP2018097828A 2018-05-22 2018-05-22 発光素子の製造方法 Active JP6791208B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018097828A JP6791208B2 (ja) 2018-05-22 2018-05-22 発光素子の製造方法
PCT/JP2019/015989 WO2019225206A1 (ja) 2018-05-22 2019-04-12 発光素子の製造方法
TW108113626A TW202004851A (zh) 2018-05-22 2019-04-18 發光元件的製造方法

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JP2018097828A JP6791208B2 (ja) 2018-05-22 2018-05-22 発光素子の製造方法

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JP2019204842A JP2019204842A (ja) 2019-11-28
JP2019204842A5 JP2019204842A5 (enrdf_load_stackoverflow) 2020-04-02
JP6791208B2 true JP6791208B2 (ja) 2020-11-25

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JP (1) JP6791208B2 (enrdf_load_stackoverflow)
TW (1) TW202004851A (enrdf_load_stackoverflow)
WO (1) WO2019225206A1 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112687767B9 (zh) * 2020-12-01 2021-12-03 华灿光电(苏州）有限公司 芯片扩膜方法
JP2024104823A (ja) 2023-01-25 2024-08-06 株式会社ナノマテリアル研究所 発光素子搭載配線用基板の表示用基板への転写による表示装置の製造方法および表示用基板と表示装置
JP2025008930A (ja) 2023-07-06 2025-01-20 株式会社ナノマテリアル研究所 マイクロｌｅｄの製造方法と発光素子および表示装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003098977A (ja) * 2001-09-19 2003-04-04 Sony Corp 素子の転写方法、素子の配列方法、及び画像表示装置の製造方法
JP2003093961A (ja) * 2001-09-21 2003-04-02 Sony Corp 液体の塗布方法、素子の実装方法、素子の転写方法、素子の配列方法及び画像表示装置の製造方法
JP4120223B2 (ja) * 2002-01-16 2008-07-16 ソニー株式会社 電子部品の製造方法、これを用いた画像表示装置
JP4745073B2 (ja) * 2006-02-03 2011-08-10 シチズン電子株式会社 表面実装型発光素子の製造方法
JP6013806B2 (ja) * 2012-07-03 2016-10-25 株式会社ディスコ ウエーハの加工方法
JP6116827B2 (ja) * 2012-08-07 2017-04-19 シャープ株式会社 半導体装置の製造方法及び半導体装置の製造装置
JP6205897B2 (ja) * 2013-06-27 2017-10-04 日亜化学工業株式会社 発光装置及びその製造方法
JP6425435B2 (ja) * 2014-07-01 2018-11-21 株式会社ディスコ チップ間隔維持装置
CN108028292B (zh) * 2015-03-06 2020-11-17 亮锐控股有限公司 使用切割带将陶瓷磷光板附着在发光器件(led)管芯上的方法、形成切割带的方法以及切割带
JP5888455B1 (ja) * 2015-04-01 2016-03-22 富士ゼロックス株式会社 半導体製造装置および半導体片の製造方法
JP6573072B2 (ja) * 2015-08-27 2019-09-11 株式会社村田製作所 フィルム拡張装置およびそれを用いた電子部品の製造方法
US10032827B2 (en) * 2016-06-29 2018-07-24 Applied Materials, Inc. Systems and methods for transfer of micro-devices
CN106206397B (zh) * 2016-08-05 2020-02-07 厦门市三安光电科技有限公司 用于半导体器件的薄膜及半导体器件的制作方法

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WO2019225206A1 (ja) 2019-11-28
TW202004851A (zh) 2020-01-16
JP2019204842A (ja) 2019-11-28

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