JP6789096B2 - 熱処理装置、熱処理方法及びコンピュータ記憶媒体 - Google Patents

熱処理装置、熱処理方法及びコンピュータ記憶媒体 Download PDF

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Publication number
JP6789096B2
JP6789096B2 JP2016249127A JP2016249127A JP6789096B2 JP 6789096 B2 JP6789096 B2 JP 6789096B2 JP 2016249127 A JP2016249127 A JP 2016249127A JP 2016249127 A JP2016249127 A JP 2016249127A JP 6789096 B2 JP6789096 B2 JP 6789096B2
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Japan
Prior art keywords
temperature
hot plate
lid
heat treatment
wafer
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JP2016249127A
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English (en)
Japanese (ja)
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JP2018107175A (ja
JP2018107175A5 (enExample
Inventor
栄一 磧本
栄一 磧本
剛 七種
剛 七種
裕司 脊古
裕司 脊古
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2016249127A priority Critical patent/JP6789096B2/ja
Priority to US15/823,843 priority patent/US11087983B2/en
Priority to TW106143082A priority patent/TWI743267B/zh
Priority to KR1020170175065A priority patent/KR102434669B1/ko
Priority to CN201711404451.1A priority patent/CN108231627B/zh
Publication of JP2018107175A publication Critical patent/JP2018107175A/ja
Publication of JP2018107175A5 publication Critical patent/JP2018107175A5/ja
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Publication of JP6789096B2 publication Critical patent/JP6789096B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Control Of Resistance Heating (AREA)
  • Resistance Heating (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2016249127A 2016-12-22 2016-12-22 熱処理装置、熱処理方法及びコンピュータ記憶媒体 Active JP6789096B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2016249127A JP6789096B2 (ja) 2016-12-22 2016-12-22 熱処理装置、熱処理方法及びコンピュータ記憶媒体
US15/823,843 US11087983B2 (en) 2016-12-22 2017-11-28 Thermal treatment apparatus, thermal treatment method, and non-transitory computer storage medium
TW106143082A TWI743267B (zh) 2016-12-22 2017-12-08 熱處理裝置、熱處理方法及電腦記憶媒體
KR1020170175065A KR102434669B1 (ko) 2016-12-22 2017-12-19 열처리 장치, 열처리 방법 및 컴퓨터 기억 매체
CN201711404451.1A CN108231627B (zh) 2016-12-22 2017-12-22 热处理装置、热处理方法以及计算机存储介质

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016249127A JP6789096B2 (ja) 2016-12-22 2016-12-22 熱処理装置、熱処理方法及びコンピュータ記憶媒体

Publications (3)

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JP2018107175A JP2018107175A (ja) 2018-07-05
JP2018107175A5 JP2018107175A5 (enExample) 2019-11-14
JP6789096B2 true JP6789096B2 (ja) 2020-11-25

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JP2016249127A Active JP6789096B2 (ja) 2016-12-22 2016-12-22 熱処理装置、熱処理方法及びコンピュータ記憶媒体

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Country Link
US (1) US11087983B2 (enExample)
JP (1) JP6789096B2 (enExample)
KR (1) KR102434669B1 (enExample)
CN (1) CN108231627B (enExample)
TW (1) TWI743267B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7093693B2 (ja) * 2018-07-13 2022-06-30 東京エレクトロン株式会社 熱処理装置及び基板滑り検出方法
CN109003925B (zh) * 2018-08-13 2020-08-25 常州瑞择微电子科技有限公司 用于半导体掩膜板的高精密平板加热装置
KR102225682B1 (ko) * 2018-09-28 2021-03-12 세메스 주식회사 기판의 열처리 방법
JP7269713B2 (ja) * 2018-10-09 2023-05-09 東京エレクトロン株式会社 基板冷却装置及び基板冷却方法
JP7129309B2 (ja) * 2018-10-16 2022-09-01 東京エレクトロン株式会社 基板処理装置、基板処理方法、及び記憶媒体
JP7186096B2 (ja) * 2019-01-09 2022-12-08 東京エレクトロン株式会社 熱板の冷却方法及び加熱処理装置
CN111537854B (zh) * 2020-05-14 2021-09-07 哈尔滨理工大学 一种可变温多功能样品室
CN111863670B (zh) * 2020-07-31 2025-06-03 芯米(厦门)半导体设备有限公司 一种晶圆热盘结构
JP2022038752A (ja) * 2020-08-27 2022-03-10 キヤノン株式会社 基板処理方法、基板保持装置、成形装置、及び物品の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3525022B2 (ja) 1996-12-20 2004-05-10 大日本スクリーン製造株式会社 基板加熱装置
JPH11329993A (ja) * 1998-05-15 1999-11-30 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2001274064A (ja) 2000-03-27 2001-10-05 Tokyo Electron Ltd 加熱処理装置及び加熱処理方法
JP3825277B2 (ja) * 2001-05-25 2006-09-27 東京エレクトロン株式会社 加熱処理装置
JP4474918B2 (ja) * 2003-12-25 2010-06-09 理化工業株式会社 制御装置
DE102004055449B4 (de) * 2004-11-17 2008-10-23 Steag Hamatech Ag Verfahren und Vorrichtung zum thermischen Behandeln von Substraten
JP4444090B2 (ja) * 2004-12-13 2010-03-31 東京エレクトロン株式会社 熱処理板の温度設定方法，熱処理板の温度設定装置，プログラム及びプログラムを記録したコンピュータ読み取り可能な記録媒体
JP4530933B2 (ja) * 2005-07-21 2010-08-25 大日本スクリーン製造株式会社 基板熱処理装置
JP4811860B2 (ja) * 2006-05-10 2011-11-09 東京エレクトロン株式会社 熱処理方法、そのプログラム及び熱処理装置
US7831135B2 (en) * 2007-09-04 2010-11-09 Sokudo Co., Ltd. Method and system for controlling bake plate temperature in a semiconductor processing chamber
JP2015184234A (ja) * 2014-03-26 2015-10-22 株式会社Ｓｃｒｅｅｎホールディングス 温度測定装置および温度測定方法
JP6539568B2 (ja) * 2015-11-04 2019-07-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置

Also Published As

Publication number Publication date
CN108231627A (zh) 2018-06-29
US11087983B2 (en) 2021-08-10
US20180182611A1 (en) 2018-06-28
TWI743267B (zh) 2021-10-21
JP2018107175A (ja) 2018-07-05
TW201837971A (zh) 2018-10-16
CN108231627B (zh) 2023-07-14
KR102434669B1 (ko) 2022-08-22
KR20180073477A (ko) 2018-07-02

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