JP6788202B2 - 電子装置、電子装置の製造方法及び電子機器 - Google Patents
電子装置、電子装置の製造方法及び電子機器 Download PDFInfo
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- JP6788202B2 JP6788202B2 JP2018548474A JP2018548474A JP6788202B2 JP 6788202 B2 JP6788202 B2 JP 6788202B2 JP 2018548474 A JP2018548474 A JP 2018548474A JP 2018548474 A JP2018548474 A JP 2018548474A JP 6788202 B2 JP6788202 B2 JP 6788202B2
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Description
本発明の目的、特徴及び利点は、本発明の例として好ましい実施の形態を表す添付の図面と関連した以下の説明により明らかになるであろう。
図1は電子装置の一例を示す図である。図1(A)には、電子装置の一例の要部平面模式図を示している。図1(B)には、図1(A)のL1−L1断面模式図を示している。
回路基板110には、例えば、インターポーザ又はマザーボードが用いられる。積層体120Aは、半田等のバンプ122を介して積層された複数の半導体素子121(電子部品)を含む。積層される上下の隣り合う半導体素子121間は、介在されるバンプ122を用いて接続される。バンプ122で接続されることで生じる上下の隣り合う半導体素子121間のギャップには、例えば図1に示すように、アンダーフィル樹脂等の接着剤124が充填されてもよい。このような積層体120Aの最下層の半導体素子121が、半田等のバンプ123を用いて回路基板110に接続される。
図2は電子装置の別例を示す図である。図2(A)には、電子装置の一例の要部平面模式図を示している。図2(B)には、図2(A)のL2−L2断面模式図を示している。
図1に示した電子装置100A及び図2に示した電子装置100Bの、昇温過程の温度推移をシミュレーションした結果の一例を図3(A)に、冷却過程の温度推移をシミュレーションした結果の一例を図3(B)に、それぞれ示す。図3(A)及び図3(B)では、電子装置100Aの温度推移を点線Qaで示し、電子装置100Bの温度推移を実線Qbで示している。
図4及び図5は第1の実施の形態に係る電子装置の一例を示す図である。図4には、電子装置の一例の要部斜視模式図を示している。図5(A)には、電子装置の一例の要部平面模式図を示している。図5(B)には、図5(A)のL5a−L5a断面模式図を示している。図5(C)には、図5(A)のL5b−L5b断面模式図を示している。尚、図5(B)及び図5(C)では便宜上、断面上には存在しない電子部品を点線で図示している。
回路基板10には、例えば、インターポーザ又はマザーボードが用いられる。積層体20は、Z方向に積層された電子部品21群を含む。積層体20の電子部品21群には、例えば、半導体素子、又は半導体素子を備えた半導体装置が用いられる。尚、半導体素子及び半導体装置の構成例については後述する(図12〜図15)。電子部品21群は、半田等のバンプ(図示せず)を介して積層される。隣り合う上下層の電子部品21間は、介在されるバンプを用いて接続される。最下層の電子部品21群は、半田等のバンプ(図示せず)を用いて回路基板10に接続される。
積層体20では、第N層の離間した隣り合う電子部品21間(例えば電子部品21a,21b間)の隙間25の一部と、それらの上に積層される、第N+1層の離間した隣り合う電子部品21間(例えば電子部品21c,21d間)の隙間25の一部とが重複する。これにより、積層体20には、第N層と第N+1層の2層にわたって連通する空間、即ち吹き抜け24が形成される。
図1に示した電子装置100A、並びに図4及び図5に示した電子装置1の、昇温過程の温度推移をシミュレーションした結果の一例を図6(A)に、冷却過程の温度推移をシミュレーションした結果の一例を図6(B)に、それぞれ示す。図6(A)及び図6(B)では、電子装置100Aの温度推移を点線Raで示し、電子装置1の温度推移を実線Rで示している。
図7に示す電子装置2は、第N,N+1層共に、隣り合う電子部品21同士がX方向には離間し且つY方向には接触して並設された電子部品21群を含み、第N層の隣り合う電子部品21間の隙間25を、第N+1層の電子部品21が塞ぐ構造を有する。尚、図7では便宜上、積層体20の最上層を第N+1層、最上層の1層下の層を第N層として図示している。この比較例の電子装置2は、上記電子装置1のような吹き抜け24を有していない。
図8には、図7に示した電子装置2、並びに図4及び図5に示した電子装置1の、冷却過程の温度推移をシミュレーションした結果の一例を示している。図8では、電子装置2の温度推移を点線Saで示し、電子装置1の温度推移を実線Sで示している。
図9に示す電子機器30は、上記のような電子装置1、及び電子装置1の積層体20に対して冷却流体を供給する冷却装置31を備える。冷却装置31は、冷却流体が気体の場合には、それを送風するためのファン(又はファン及び配管)を備え、冷却流体が液体の場合には、それを送液するためのポンプ及び配管を備える。冷却装置31は、電子装置1の積層体20の側面に向かって、気体又は液体の冷却流体を供給する。
図10は別形態に係る電子装置の一例を示す図である。図10には、電子装置の一例の要部断面模式図を示している。
例えば、積層体20aの最上層の電子部品21eから、隣り合う積層体20bの最上層の電子部品21fに信号が送られるような場合を想定する。この場合、図10に点線矢印で示すように、積層体20aの最上層の電子部品21eから出力された信号は、その最下層へと送られた後、回路基板10を経由し、積層体20bの最下層、更にその最上層の電子部品21fへと送られる。このように電子装置3では、信号をやり取りする電子部品21の配置によって、信号伝送距離が増大する場合がある。
図11には、電子部品21群の総数を同じにした電子装置3及び電子装置1について、電子部品21間の信号伝送距離をシミュレーションした結果の一例を示している。図11は、特定の電子部品21(No.1)からの信号伝送距離が短い電子部品21の順に(No.2以降)、その信号伝送距離比率(信号伝送距離の所定値に対する比率)をプロットしたものである。図11では、電子装置3の信号伝送距離比率をプロットUaで示し、電子装置1の信号伝送距離比率をプロットUで示している。
電子装置1の積層体20は、隣り合う上下層の電子部品21群同士が接続される構造を有する。電子装置1の積層体20には、回路基板10を経由しなくても信号伝送が行えるような伝送路を設けることができる。図11より、電子装置1の積層体20のように電子部品21群を配置して接続すると、電子装置3の積層体20a,20b,20cのように電子部品21群を配置して接続するものに比べて、短い距離で電子部品21間の信号伝送が行えることが分かる。
上記のような電子装置1では、積層体20の各層の電子部品21群が一定間隔で整列するように配置されることが好ましく、1層隔てた層同士(奇数番目の層同士及び偶数番目の層同士)の電子部品21群が重複するように配置されることが好ましい。このようにすると、積層体20において、その各層の隙間25のばらつきが抑えられると共に、Z方向に直線状に延びる吹き抜け24が形成される。これにより、積層体20の冷却に用いられる冷却流体の効率的な流入、流通及び排出が実現され、積層体20の放熱性、冷却効率の向上、及び積層体20の温度分布の均一化を図ることが可能になる。
図12に示す半導体素子40は、半導体基板41と、半導体基板41上に設けられた配線層42とを含む。
図13(A)及び図13(B)にはそれぞれ、半導体装置の一例の要部断面模式図を示している。
回路基板51には、例えば、プリント基板が用いられる。回路基板51は、配線やビア等の導体部51aと、導体部51aを覆う絶縁部51bとを含む。導体部51aには、Cu等の各種導体材料が用いられる。絶縁部51bには、フェノール樹脂、エポキシ樹脂、ポリイミド樹脂等の樹脂材料、そのような樹脂材料をガラス繊維や炭素繊維に含浸した複合樹脂材料等が用いられる。
図14(A)に示す半導体装置50C、及び図14(B)に示す半導体装置50Dでは、半導体素子52が、樹脂や導電性ペースト等のダイアタッチ材57で回路基板51上に接着されて固定され、ワイヤ58でワイヤボンディングされる。図14(B)の半導体装置50Dでは、ワイヤボンディングされた半導体素子52及びワイヤ58が、封止層55で封止される。
図15に示す半導体装置60は、樹脂層61と、樹脂層61に埋設された同種又は異種の複数(ここでは一例として2つ)の半導体素子62と、樹脂層61上に設けられた再配線層63とを含む。半導体素子62は、その端子62aの配設面が露出するように樹脂層61に埋設される。再配線層63は、Cu等が用いられた再配線やビア等の導体部63aと、導体部63aを覆う樹脂材料等の絶縁部63bとを含む。
ここでは、上記図12に示したような半導体素子40を用いた電子装置の例を、第2の実施の形態として説明する。
積層体20A及びそれを備えた電子装置1Aの過熱、過熱による性能低下や損傷、信号伝送距離の増大による性能低下が効果的に抑えられ、高性能及び高品質の電子装置1Aが実現される。
ここでは、上記図13(A)に示したような半導体装置50Aを用いた電子装置の例を、第3の実施の形態として説明する。
積層体20B及びそれを備えた電子装置1Bの過熱、過熱による性能低下や損傷、信号伝送距離の増大による性能低下が効果的に抑えられ、高性能及び高品質の電子装置1Bが実現される。
また、このような電子装置1C又は電子装置1Dを備えた、高性能、高品質及び高信頼性の電子機器が実現される。或いは、電子装置1C又は電子装置1Dと、冷却流体を供給する冷却装置とを備えた、高性能、高品質及び高信頼性の電子機器が実現される。
尚、第3の実施の形態に係る電子装置1B,1C,1D等に含まれる半導体素子52群の種類及び回路基板51群の種類は、限定されるものではない。例えば、半導体素子52群は、全て同種のものであってもよいし、一部に異種のものが含まれてもよい。同様に、回路基板51群は、全て同種のものであってもよいし、一部に異種のものが含まれてもよい。
図19は第4の実施の形態に係る電子装置の一例を示す図である。図19(A)には、電子装置の一例の要部平面模式図を示している。図19(B)には、図19(A)のL19−L19断面模式図を示している。
また、このような電子装置1Eを備えた、高性能、高品質及び高信頼性の電子機器が実現される。或いは、電子装置1Eと、冷却流体を供給する冷却装置とを備えた、高性能、高品質及び高信頼性の電子機器が実現される。
尚、第4の実施の形態に係る電子装置1E等に含まれる半導体素子52群の種類及び回路基板51群の種類は、限定されるものではない。例えば、半導体素子52群は、全て同種のものであってもよいし、一部に異種のものが含まれてもよい。同様に、回路基板51群は、全て同種のものであってもよいし、一部に異種のものが含まれてもよい。
上記の電子装置1,1A,1B,1C,1D,1E等は、各種電子機器に搭載することができる。例えば、コンピュータ(パーソナルコンピュータ、スーパーコンピュータ、サーバ等)、スマートフォン、携帯電話、タブレット端末、センサ、カメラ、オーディオ機器、測定装置、検査装置、製造装置といった、各種電子機器に用いることができる。
図20に示すように、例えば上記図4等に示したような電子装置1が、各種電子機器80に搭載(内蔵)される。電子機器80には更に、上記図9に関して述べたような観点から、電子装置1の積層体20に対して所定の方向から冷却流体を供給する冷却装置81が搭載されてもよい。例えば冷却装置81は、気体の冷却流体を送風するためのファン等、又は液体の冷却流体を送液するためのポンプ等を備える。
上記については単に例を示すものである。更に、多数の変形、変更が当業者にとって可能であり、本発明は上記に示し、説明した正確な構成及び応用例に限定されるものではなく、対応する全ての変形例及び均等物は、添付の請求項及びその均等物による本発明の範囲とみなされる。
10,51,110 回路基板
20,20a,20b,20c,20A,20B,120A,120B 積層体
21,21a,21b,21c,21d,21e,21f 電子部品
21a1,21a2,21b1,21b2,40a1,40a2,40b1,40b2,50Aa1,50Aa2,50Ab1,50Ab2 端部
23,53,122,123 バンプ
24 吹き抜け
25 隙間
30,80 電子機器
31,81 冷却装置
40,40a,40b,40c,40d,52,62,121 半導体素子
41 半導体基板
41a 素子分離領域
42 配線層
42a,51a,63a 導体部
42b,51b,63b 絶縁部
43 MOSトランジスタ
43a ゲート絶縁膜
43b ゲート電極
43c ソース領域
43d ドレイン領域
43e スペーサ
44,56,64 導通部
44a TSV
50A,50Aa,50Ab,50Ac,50Ad,50B,50C,50D,60 半導体装置
55 封止層
57 ダイアタッチ材
58 ワイヤ
61 樹脂層
62a 端子
63 再配線層
64a 電極
71,72,124 接着剤
125 溝
Claims (12)
- 第1電子部品群を含み、隣り合う前記第1電子部品間に第1貫通空間を有する第1層と、
前記第1層上に積層され、前記第1電子部品群と接続される第2電子部品群を含み、隣り合う前記第2電子部品間に、前記第1貫通空間と部分的に重複する第2貫通空間を有する第2層と
を含み、
各前記第2電子部品の4つの端部は、それぞれ異なる前記第1電子部品の端部に積層されることを特徴とする電子装置。 - 隣り合う前記第1電子部品の、対向する互いの一端部上に跨って、隣り合う前記第2電子部品の一方が積層され、対向する互いの他端部上に跨って且つ前記一方から離間して、隣り合う前記第2電子部品の他方が積層されることを特徴とする請求項1に記載の電子装置。
- 前記第1電子部品及び前記第2電子部品に、半導体素子が用いられることを特徴とする請求項1に記載の電子装置。
- 前記第1電子部品及び前記第2電子部品にそれぞれ、半導体素子と、前記半導体素子が搭載された回路基板とを含む半導体装置が用いられることを特徴とする請求項1に記載の電子装置。
- 前記第1電子部品の前記回路基板の前記半導体素子が搭載された面と、前記第2電子部品の前記回路基板の前記半導体素子が搭載された面とが、同一方向に向くことを特徴とする請求項4に記載の電子装置。
- 前記第1電子部品の前記回路基板の前記半導体素子が搭載された面と、前記第2電子部品の前記回路基板の前記半導体素子が搭載された面とが、反対方向に向くことを特徴とする請求項4に記載の電子装置。
- 各前記第2電子部品の4つの端部と、当該4つの端部がそれぞれ積層される前記第1電子部品の端部とは、バンプを用いて接続されることを特徴とする請求項1乃至6のいずれかに記載の電子装置。
- 第1電子部品群を含み、隣り合う前記第1電子部品間に第1貫通空間を有する第1層を形成する工程と、
前記第1層上に、前記第1電子部品群と接続される第2電子部品群を含み、隣り合う前記第2電子部品間に、前記第1貫通空間と部分的に重複する第2貫通空間を有する第2層を形成する工程と
を含み、
前記第1層上に前記第2層を形成する工程は、各前記第2電子部品の4つの端部を、それぞれ異なる前記第1電子部品の端部に積層する工程を含むことを特徴とする電子装置の製造方法。 - 各前記第2電子部品の4つの端部を、それぞれ異なる前記第1電子部品の端部に積層する工程は、各前記第2電子部品の4つの端部と、当該4つの端部をそれぞれ積層する前記第1電子部品の端部とを、バンプを用いて接続する工程を含むことを特徴とする請求項8に記載の電子装置の製造方法。
- 第1電子部品群を含み、隣り合う前記第1電子部品間に第1貫通空間を有する第1層と、
前記第1層上に積層され、前記第1電子部品群と接続される第2電子部品群を含み、隣り合う前記第2電子部品間に、前記第1貫通空間と部分的に重複する第2貫通空間を有する第2層と
を含み、
各前記第2電子部品の4つの端部は、それぞれ異なる前記第1電子部品の端部に積層される電子装置を備えることを特徴とする電子機器。 - 前記第1層及び前記第2層に対し、前記第1層と前記第2層との積層方向と交差する方向から冷却流体を供給する冷却装置を更に含むことを特徴とする請求項10に記載の電子機器。
- 各前記第2電子部品の4つの端部と、当該4つの端部がそれぞれ積層される前記第1電子部品の端部とは、バンプを用いて接続されることを特徴とする請求項10又は11に記載の電子機器。
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