JP6783562B2 - ケミカルメカニカル研磨パッドのための複合研磨層の製造方法 - Google Patents

ケミカルメカニカル研磨パッドのための複合研磨層の製造方法 Download PDF

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Publication number
JP6783562B2
JP6783562B2 JP2016125340A JP2016125340A JP6783562B2 JP 6783562 B2 JP6783562 B2 JP 6783562B2 JP 2016125340 A JP2016125340 A JP 2016125340A JP 2016125340 A JP2016125340 A JP 2016125340A JP 6783562 B2 JP6783562 B2 JP 6783562B2
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JP
Japan
Prior art keywords
cylindrical chamber
polishing
internal cylindrical
polishing layer
supply port
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016125340A
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English (en)
Japanese (ja)
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JP2017052079A (ja
Inventor
バイニャン・チャン
テレサ・ブルガロラス・ブルファウ
ユリア・コジューフ
デイビッド・マイケル・ヴェネツィアーレ
ユファ・トン
ディエゴ・ルーゴ
ジョージ・シー・ジェイコブ
ジェフリー・ビー・ミラー
トニー・クアン・トラン
マーク・アール・スタック
アンドリュー・ワンク
ジェフリー・ジェームズ・ヘンドロン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Global Technologies LLC
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Dow Global Technologies LLC
DuPont Electronic Materials Holding Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/751,410 external-priority patent/US10011002B2/en
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Dow Global Technologies LLC, DuPont Electronic Materials Holding Inc filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of JP2017052079A publication Critical patent/JP2017052079A/ja
Application granted granted Critical
Publication of JP6783562B2 publication Critical patent/JP6783562B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/22Lapping pads for working plane surfaces characterised by a multi-layered structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0009Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2016125340A 2015-06-26 2016-06-24 ケミカルメカニカル研磨パッドのための複合研磨層の製造方法 Active JP6783562B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/751,410 2015-06-26
US14/751,410 US10011002B2 (en) 2015-06-26 2015-06-26 Method of making composite polishing layer for chemical mechanical polishing pad
US15/163,184 US10092998B2 (en) 2015-06-26 2016-05-24 Method of making composite polishing layer for chemical mechanical polishing pad
US15/163,184 2016-05-24

Publications (2)

Publication Number Publication Date
JP2017052079A JP2017052079A (ja) 2017-03-16
JP6783562B2 true JP6783562B2 (ja) 2020-11-11

Family

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Family Applications (1)

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JP2016125340A Active JP6783562B2 (ja) 2015-06-26 2016-06-24 ケミカルメカニカル研磨パッドのための複合研磨層の製造方法

Country Status (7)

Country Link
US (1) US10092998B2 (enExample)
JP (1) JP6783562B2 (enExample)
KR (1) KR102499031B1 (enExample)
CN (1) CN107695869B (enExample)
DE (1) DE102016007772A1 (enExample)
FR (1) FR3037836A1 (enExample)
TW (1) TWI719028B (enExample)

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TWI642772B (zh) * 2017-03-31 2018-12-01 智勝科技股份有限公司 研磨墊及研磨方法
US11179822B2 (en) * 2017-08-31 2021-11-23 Hubei Dinghui Microelectronics Materials Co., Ltd Polyurethane polishing layer, polishing pad comprising polishing layer, method for preparing polishing layer and method for planarizing material
US10569383B2 (en) * 2017-09-15 2020-02-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Flanged optical endpoint detection windows and CMP polishing pads containing them
US10465097B2 (en) * 2017-11-16 2019-11-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aliphatic UV cured polyurethane optical endpoint detection windows with high UV transparency for CMP polishing pads
US10464187B2 (en) * 2017-12-01 2019-11-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High removal rate chemical mechanical polishing pads from amine initiated polyol containing curatives
CN111571427B (zh) * 2020-05-22 2022-05-17 宁波江丰电子材料股份有限公司 一种保持环
JP7239049B1 (ja) 2022-02-18 2023-03-14 東洋インキScホールディングス株式会社 研磨パッド用の湿気硬化型ホットメルト接着剤および研磨パッド
CN115365922B (zh) * 2022-10-24 2023-02-28 西安奕斯伟材料科技有限公司 研磨轮、研磨设备及硅片

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Also Published As

Publication number Publication date
KR102499031B1 (ko) 2023-02-14
TWI719028B (zh) 2021-02-21
CN107695869B (zh) 2019-06-21
US10092998B2 (en) 2018-10-09
DE102016007772A1 (de) 2016-12-29
CN107695869A (zh) 2018-02-16
US20160375554A1 (en) 2016-12-29
TW201700556A (zh) 2017-01-01
JP2017052079A (ja) 2017-03-16
KR20170001627A (ko) 2017-01-04
FR3037836A1 (enExample) 2016-12-30

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