CN107695869B - 制备用于化学机械抛光垫的复合抛光层的方法 - Google Patents

制备用于化学机械抛光垫的复合抛光层的方法 Download PDF

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Publication number
CN107695869B
CN107695869B CN201610462790.4A CN201610462790A CN107695869B CN 107695869 B CN107695869 B CN 107695869B CN 201610462790 A CN201610462790 A CN 201610462790A CN 107695869 B CN107695869 B CN 107695869B
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CN
China
Prior art keywords
polishing
inner cylindrical
polishing layer
avg
chemical mechanical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610462790.4A
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English (en)
Chinese (zh)
Other versions
CN107695869A (zh
Inventor
B·钱
布鲁福 T·布鲁加罗拉斯
J·考兹休克
D·M·韦内齐亚莱
Y·童
D·卢戈
G·C·雅各布
J·B·米勒
T·Q·陈
M·R·斯塔克
A·旺克
J·J·亨德伦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ROHM AND HAAS ELECTRONIC MATER
Dow Global Technologies LLC
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ROHM AND HAAS ELECTRONIC MATER
Dow Global Technologies LLC
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Priority claimed from US14/751,410 external-priority patent/US10011002B2/en
Application filed by ROHM AND HAAS ELECTRONIC MATER, Dow Global Technologies LLC filed Critical ROHM AND HAAS ELECTRONIC MATER
Publication of CN107695869A publication Critical patent/CN107695869A/zh
Application granted granted Critical
Publication of CN107695869B publication Critical patent/CN107695869B/zh
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN201610462790.4A 2015-06-26 2016-06-23 制备用于化学机械抛光垫的复合抛光层的方法 Active CN107695869B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/751410 2015-06-26
US14/751,410 US10011002B2 (en) 2015-06-26 2015-06-26 Method of making composite polishing layer for chemical mechanical polishing pad
US15/163,184 US10092998B2 (en) 2015-06-26 2016-05-24 Method of making composite polishing layer for chemical mechanical polishing pad
US15/163184 2016-05-24

Publications (2)

Publication Number Publication Date
CN107695869A CN107695869A (zh) 2018-02-16
CN107695869B true CN107695869B (zh) 2019-06-21

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CN201610462790.4A Active CN107695869B (zh) 2015-06-26 2016-06-23 制备用于化学机械抛光垫的复合抛光层的方法

Country Status (7)

Country Link
US (1) US10092998B2 (enExample)
JP (1) JP6783562B2 (enExample)
KR (1) KR102499031B1 (enExample)
CN (1) CN107695869B (enExample)
DE (1) DE102016007772A1 (enExample)
FR (1) FR3037836A1 (enExample)
TW (1) TWI719028B (enExample)

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US10144115B2 (en) 2015-06-26 2018-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making polishing layer for chemical mechanical polishing pad
US9776300B2 (en) 2015-06-26 2017-10-03 Rohm And Haas Electronic Materials Cmp Holdings Inc. Chemical mechanical polishing pad and method of making same
CN105171593B (zh) * 2015-08-11 2017-12-26 湖北鼎龙控股股份有限公司 耐候性化学机械抛光垫
TWI642772B (zh) * 2017-03-31 2018-12-01 智勝科技股份有限公司 研磨墊及研磨方法
US11179822B2 (en) * 2017-08-31 2021-11-23 Hubei Dinghui Microelectronics Materials Co., Ltd Polyurethane polishing layer, polishing pad comprising polishing layer, method for preparing polishing layer and method for planarizing material
US10569383B2 (en) * 2017-09-15 2020-02-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Flanged optical endpoint detection windows and CMP polishing pads containing them
US10465097B2 (en) * 2017-11-16 2019-11-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aliphatic UV cured polyurethane optical endpoint detection windows with high UV transparency for CMP polishing pads
US10464187B2 (en) * 2017-12-01 2019-11-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High removal rate chemical mechanical polishing pads from amine initiated polyol containing curatives
CN111571427B (zh) * 2020-05-22 2022-05-17 宁波江丰电子材料股份有限公司 一种保持环
JP7239049B1 (ja) 2022-02-18 2023-03-14 東洋インキＳｃホールディングス株式会社 研磨パッド用の湿気硬化型ホットメルト接着剤および研磨パッド
CN115365922B (zh) * 2022-10-24 2023-02-28 西安奕斯伟材料科技有限公司 研磨轮、研磨设备及硅片

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CN1336861A (zh) * 1999-01-21 2002-02-20 罗德尔控股公司 改进的抛光垫及其抛光方法
CN1449322A (zh) * 2000-06-29 2003-10-15 国际商业机器公司 带槽的抛光垫及其使用方法
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CN101119829A (zh) * 2004-12-29 2008-02-06 东邦工程株式会社 抛光垫

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CN1336861A (zh) * 1999-01-21 2002-02-20 罗德尔控股公司 改进的抛光垫及其抛光方法
US7214757B2 (en) * 2000-03-09 2007-05-08 Eastman Kodak Company Polyurethane elastomers and shaped articles prepared therefrom
CN1449322A (zh) * 2000-06-29 2003-10-15 国际商业机器公司 带槽的抛光垫及其使用方法
CN101119829A (zh) * 2004-12-29 2008-02-06 东邦工程株式会社 抛光垫

Also Published As

Publication number Publication date
JP6783562B2 (ja) 2020-11-11
KR102499031B1 (ko) 2023-02-14
TWI719028B (zh) 2021-02-21
US10092998B2 (en) 2018-10-09
DE102016007772A1 (de) 2016-12-29
CN107695869A (zh) 2018-02-16
US20160375554A1 (en) 2016-12-29
TW201700556A (zh) 2017-01-01
JP2017052079A (ja) 2017-03-16
KR20170001627A (ko) 2017-01-04
FR3037836A1 (enExample) 2016-12-30

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