JP6764383B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP6764383B2
JP6764383B2 JP2017180030A JP2017180030A JP6764383B2 JP 6764383 B2 JP6764383 B2 JP 6764383B2 JP 2017180030 A JP2017180030 A JP 2017180030A JP 2017180030 A JP2017180030 A JP 2017180030A JP 6764383 B2 JP6764383 B2 JP 6764383B2
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Japan
Prior art keywords
magnetic field
field forming
forming coil
power source
time constant
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JP2017180030A
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English (en)
Japanese (ja)
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JP2019057375A5 (enExample
JP2019057375A (ja
Inventor
靖 園田
靖 園田
安井　尚輝
尚輝 安井
基裕 田中
基裕 田中
山本　浩一
浩一 山本
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Hitachi High Tech Corp
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Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Priority to JP2017180030A priority Critical patent/JP6764383B2/ja
Priority to KR1020180004213A priority patent/KR102048304B1/ko
Priority to TW107101773A priority patent/TWI673759B/zh
Priority to US15/902,799 priority patent/US12347656B2/en
Publication of JP2019057375A publication Critical patent/JP2019057375A/ja
Publication of JP2019057375A5 publication Critical patent/JP2019057375A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2017180030A 2017-09-20 2017-09-20 プラズマ処理装置 Active JP6764383B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017180030A JP6764383B2 (ja) 2017-09-20 2017-09-20 プラズマ処理装置
KR1020180004213A KR102048304B1 (ko) 2017-09-20 2018-01-12 플라즈마 처리 장치
TW107101773A TWI673759B (zh) 2017-09-20 2018-01-18 電漿處理裝置
US15/902,799 US12347656B2 (en) 2017-09-20 2018-02-22 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017180030A JP6764383B2 (ja) 2017-09-20 2017-09-20 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2019057375A JP2019057375A (ja) 2019-04-11
JP2019057375A5 JP2019057375A5 (enExample) 2019-07-11
JP6764383B2 true JP6764383B2 (ja) 2020-09-30

Family

ID=65720687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017180030A Active JP6764383B2 (ja) 2017-09-20 2017-09-20 プラズマ処理装置

Country Status (4)

Country Link
US (1) US12347656B2 (enExample)
JP (1) JP6764383B2 (enExample)
KR (1) KR102048304B1 (enExample)
TW (1) TWI673759B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113348732B (zh) * 2019-12-18 2024-02-09 株式会社日立高新技术 等离子处理装置
CN113130287B (zh) * 2020-01-10 2025-02-18 汉民科技股份有限公司 线圈电流分配式的蚀刻机结构
US11328931B1 (en) * 2021-02-12 2022-05-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device
JP2024147876A (ja) * 2023-04-04 2024-10-17 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3200308A (en) * 1962-07-02 1965-08-10 Bell Telephone Labor Inc Current pulse generator exhibiting fast rise time
DE1487024B2 (de) * 1966-05-25 1970-09-10 Siemens AQ, 1000 Berlin u. 8000 München Schaltungsanordnung zum Erzeugen von Stromimpulsen großer Flankensteilheit
DE2311340C2 (de) * 1973-03-07 1974-04-04 Claude 8000 Muenchen Frantz Schaltung zur Verkürzung der Einschaltzeit von induktiven Verbrauchern
US4144751A (en) * 1977-09-06 1979-03-20 Honeywell Inc. Square wave signal generator
JPS6050923A (ja) 1983-08-31 1985-03-22 Hitachi Ltd プラズマ表面処理方法
JPH04154971A (ja) * 1990-10-16 1992-05-27 Ricoh Co Ltd Ｅｃｒプラズマ装置
JPH05136089A (ja) * 1991-03-12 1993-06-01 Hitachi Ltd マイクロ波プラズマエツチング装置及びエツチング方法
JP3236370B2 (ja) * 1992-10-29 2001-12-10 アネルバ株式会社 マイクロ波放電処理装置
JP3235299B2 (ja) * 1993-11-08 2001-12-04 株式会社日立製作所 マイクロ波プラズマ処理方法
JP2820070B2 (ja) * 1995-08-11 1998-11-05 日本電気株式会社 プラズマ化学気相成長法とその装置
JPH10199863A (ja) * 1997-01-14 1998-07-31 Sumitomo Metal Ind Ltd プラズマ処理方法、プラズマ処理装置及び半導体装置の製造方法
JP2000021871A (ja) * 1998-06-30 2000-01-21 Tokyo Electron Ltd プラズマ処理方法
JP2001110784A (ja) * 1999-10-12 2001-04-20 Hitachi Ltd プラズマ処理装置および処理方法
US7334918B2 (en) * 2003-05-07 2008-02-26 Bayco Products, Ltd. LED lighting array for a portable task light
JP2011242324A (ja) * 2010-05-20 2011-12-01 Seiko Epson Corp セルユニット及び磁場測定装置
JP6334369B2 (ja) * 2014-11-11 2018-05-30 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2017091934A (ja) * 2015-11-16 2017-05-25 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN110494589A (zh) * 2017-04-04 2019-11-22 堺显示器制品株式会社 蒸镀装置、蒸镀方法及有机el显示装置的制造方法
JP2025050923A (ja) 2023-09-25 2025-04-04 ソフトバンクグループ株式会社 システム

Also Published As

Publication number Publication date
US20190088453A1 (en) 2019-03-21
JP2019057375A (ja) 2019-04-11
KR20190032983A (ko) 2019-03-28
US12347656B2 (en) 2025-07-01
TW201916090A (zh) 2019-04-16
KR102048304B1 (ko) 2019-11-25
TWI673759B (zh) 2019-10-01

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