TWI673759B - 電漿處理裝置 - Google Patents

電漿處理裝置 Download PDF

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Publication number
TWI673759B
TWI673759B TW107101773A TW107101773A TWI673759B TW I673759 B TWI673759 B TW I673759B TW 107101773 A TW107101773 A TW 107101773A TW 107101773 A TW107101773 A TW 107101773A TW I673759 B TWI673759 B TW I673759B
Authority
TW
Taiwan
Prior art keywords
magnetic field
field forming
power supply
current
coil
Prior art date
Application number
TW107101773A
Other languages
English (en)
Chinese (zh)
Other versions
TW201916090A (zh
Inventor
園田靖
安井尚輝
田中基裕
山本浩一
Original Assignee
日商日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日立全球先端科技股份有限公司 filed Critical 日商日立全球先端科技股份有限公司
Publication of TW201916090A publication Critical patent/TW201916090A/zh
Application granted granted Critical
Publication of TWI673759B publication Critical patent/TWI673759B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW107101773A 2017-09-20 2018-01-18 電漿處理裝置 TWI673759B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-180030 2017-09-20
JP2017180030A JP6764383B2 (ja) 2017-09-20 2017-09-20 プラズマ処理装置

Publications (2)

Publication Number Publication Date
TW201916090A TW201916090A (zh) 2019-04-16
TWI673759B true TWI673759B (zh) 2019-10-01

Family

ID=65720687

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107101773A TWI673759B (zh) 2017-09-20 2018-01-18 電漿處理裝置

Country Status (4)

Country Link
US (1) US12347656B2 (enExample)
JP (1) JP6764383B2 (enExample)
KR (1) KR102048304B1 (enExample)
TW (1) TWI673759B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113348732B (zh) * 2019-12-18 2024-02-09 株式会社日立高新技术 等离子处理装置
CN113130287B (zh) * 2020-01-10 2025-02-18 汉民科技股份有限公司 线圈电流分配式的蚀刻机结构
US11328931B1 (en) * 2021-02-12 2022-05-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device
JP2024147876A (ja) * 2023-04-04 2024-10-17 東京エレクトロン株式会社 プラズマ処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04154971A (ja) * 1990-10-16 1992-05-27 Ricoh Co Ltd Ｅｃｒプラズマ装置
TW494485B (en) * 1999-10-12 2002-07-11 Hitachi Ltd Apparatus and method for plasma treatment
US20160133530A1 (en) * 2014-11-11 2016-05-12 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3200308A (en) * 1962-07-02 1965-08-10 Bell Telephone Labor Inc Current pulse generator exhibiting fast rise time
DE1487024B2 (de) * 1966-05-25 1970-09-10 Siemens AQ, 1000 Berlin u. 8000 München Schaltungsanordnung zum Erzeugen von Stromimpulsen großer Flankensteilheit
DE2311340C2 (de) * 1973-03-07 1974-04-04 Claude 8000 Muenchen Frantz Schaltung zur Verkürzung der Einschaltzeit von induktiven Verbrauchern
US4144751A (en) * 1977-09-06 1979-03-20 Honeywell Inc. Square wave signal generator
JPS6050923A (ja) 1983-08-31 1985-03-22 Hitachi Ltd プラズマ表面処理方法
JPH05136089A (ja) * 1991-03-12 1993-06-01 Hitachi Ltd マイクロ波プラズマエツチング装置及びエツチング方法
JP3236370B2 (ja) * 1992-10-29 2001-12-10 アネルバ株式会社 マイクロ波放電処理装置
JP3235299B2 (ja) * 1993-11-08 2001-12-04 株式会社日立製作所 マイクロ波プラズマ処理方法
JP2820070B2 (ja) * 1995-08-11 1998-11-05 日本電気株式会社 プラズマ化学気相成長法とその装置
JPH10199863A (ja) * 1997-01-14 1998-07-31 Sumitomo Metal Ind Ltd プラズマ処理方法、プラズマ処理装置及び半導体装置の製造方法
JP2000021871A (ja) * 1998-06-30 2000-01-21 Tokyo Electron Ltd プラズマ処理方法
US7334918B2 (en) * 2003-05-07 2008-02-26 Bayco Products, Ltd. LED lighting array for a portable task light
JP2011242324A (ja) * 2010-05-20 2011-12-01 Seiko Epson Corp セルユニット及び磁場測定装置
JP2017091934A (ja) * 2015-11-16 2017-05-25 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN110494589A (zh) * 2017-04-04 2019-11-22 堺显示器制品株式会社 蒸镀装置、蒸镀方法及有机el显示装置的制造方法
JP2025050923A (ja) 2023-09-25 2025-04-04 ソフトバンクグループ株式会社 システム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04154971A (ja) * 1990-10-16 1992-05-27 Ricoh Co Ltd Ｅｃｒプラズマ装置
TW494485B (en) * 1999-10-12 2002-07-11 Hitachi Ltd Apparatus and method for plasma treatment
US20160133530A1 (en) * 2014-11-11 2016-05-12 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method

Also Published As

Publication number Publication date
US20190088453A1 (en) 2019-03-21
JP2019057375A (ja) 2019-04-11
JP6764383B2 (ja) 2020-09-30
KR20190032983A (ko) 2019-03-28
US12347656B2 (en) 2025-07-01
TW201916090A (zh) 2019-04-16
KR102048304B1 (ko) 2019-11-25

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