JP6758967B2 - インプリント装置、インプリント方法、及び物品の製造方法 - Google Patents

インプリント装置、インプリント方法、及び物品の製造方法 Download PDF

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Publication number
JP6758967B2
JP6758967B2 JP2016137691A JP2016137691A JP6758967B2 JP 6758967 B2 JP6758967 B2 JP 6758967B2 JP 2016137691 A JP2016137691 A JP 2016137691A JP 2016137691 A JP2016137691 A JP 2016137691A JP 6758967 B2 JP6758967 B2 JP 6758967B2
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Japan
Prior art keywords
mold
light
optical path
pattern
optical
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JP2016137691A
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English (en)
Japanese (ja)
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JP2018010927A5 (enrdf_load_stackoverflow
JP2018010927A (ja
Inventor
佐藤　浩司
浩司 佐藤
雄一 藤田
雄一 藤田
磨人 山本
磨人 山本
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2016137691A priority Critical patent/JP6758967B2/ja
Priority to KR1020170084605A priority patent/KR102172015B1/ko
Publication of JP2018010927A publication Critical patent/JP2018010927A/ja
Publication of JP2018010927A5 publication Critical patent/JP2018010927A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Surface Treatment Of Glass (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2016137691A 2016-07-12 2016-07-12 インプリント装置、インプリント方法、及び物品の製造方法 Active JP6758967B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016137691A JP6758967B2 (ja) 2016-07-12 2016-07-12 インプリント装置、インプリント方法、及び物品の製造方法
KR1020170084605A KR102172015B1 (ko) 2016-07-12 2017-07-04 임프린트 장치, 임프린트 방법 및 물품의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016137691A JP6758967B2 (ja) 2016-07-12 2016-07-12 インプリント装置、インプリント方法、及び物品の製造方法

Publications (3)

Publication Number Publication Date
JP2018010927A JP2018010927A (ja) 2018-01-18
JP2018010927A5 JP2018010927A5 (enrdf_load_stackoverflow) 2019-08-22
JP6758967B2 true JP6758967B2 (ja) 2020-09-23

Family

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JP2016137691A Active JP6758967B2 (ja) 2016-07-12 2016-07-12 インプリント装置、インプリント方法、及び物品の製造方法

Country Status (2)

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JP (1) JP6758967B2 (enrdf_load_stackoverflow)
KR (1) KR102172015B1 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6821408B2 (ja) * 2016-11-28 2021-01-27 キヤノン株式会社 インプリント装置、インプリント方法、および物品の製造方法
CN113314451B (zh) * 2021-06-10 2022-08-02 哈尔滨工业大学 一种基于莫尔条纹的晶圆键合对准系统及方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005116978A (ja) * 2003-10-10 2005-04-28 Sumitomo Heavy Ind Ltd ナノインプリント装置及び方法
JP4958614B2 (ja) * 2006-04-18 2012-06-20 キヤノン株式会社 パターン転写装置、インプリント装置、パターン転写方法および位置合わせ装置
JP4795300B2 (ja) * 2006-04-18 2011-10-19 キヤノン株式会社 位置合わせ方法、インプリント方法、位置合わせ装置、インプリント装置、及び位置計測方法
JP5261665B2 (ja) * 2008-05-27 2013-08-14 株式会社ブイ・テクノロジー 近接露光装置
NL2003347A (en) * 2008-09-11 2010-03-16 Asml Netherlands Bv Imprint lithography.
JP5308369B2 (ja) * 2010-02-09 2013-10-09 株式会社日立ハイテクノロジーズ 両面インプリント装置の被転写体位置決め方法および両面インプリント装置
JP5930622B2 (ja) 2010-10-08 2016-06-08 キヤノン株式会社 インプリント装置、及び、物品の製造方法
JP6304934B2 (ja) * 2012-05-08 2018-04-04 キヤノン株式会社 インプリント装置および物品の製造方法
JP6120678B2 (ja) * 2013-05-27 2017-04-26 キヤノン株式会社 インプリント方法、インプリント装置及びデバイス製造方法
JP6304948B2 (ja) * 2013-06-19 2018-04-04 キヤノン株式会社 光源装置、およびリソグラフィ装置
JP6294680B2 (ja) * 2014-01-24 2018-03-14 キヤノン株式会社 インプリント装置、および物品の製造方法
JP6549834B2 (ja) * 2014-11-14 2019-07-24 キヤノン株式会社 インプリント装置及び物品の製造方法

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Publication number Publication date
JP2018010927A (ja) 2018-01-18
KR102172015B1 (ko) 2020-10-30
KR20180007309A (ko) 2018-01-22

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