KR102172015B1 - 임프린트 장치, 임프린트 방법 및 물품의 제조 방법 - Google Patents

임프린트 장치, 임프린트 방법 및 물품의 제조 방법 Download PDF

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KR102172015B1
KR102172015B1 KR1020170084605A KR20170084605A KR102172015B1 KR 102172015 B1 KR102172015 B1 KR 102172015B1 KR 1020170084605 A KR1020170084605 A KR 1020170084605A KR 20170084605 A KR20170084605 A KR 20170084605A KR 102172015 B1 KR102172015 B1 KR 102172015B1
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South Korea
Prior art keywords
mold
light
optical path
pattern
imprint
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Korean (ko)
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KR20180007309A (ko
Inventor
히로시 사토
유우이치 후지타
기요히토 야마모토
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Surface Treatment Of Glass (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020170084605A 2016-07-12 2017-07-04 임프린트 장치, 임프린트 방법 및 물품의 제조 방법 Active KR102172015B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016137691A JP6758967B2 (ja) 2016-07-12 2016-07-12 インプリント装置、インプリント方法、及び物品の製造方法
JPJP-P-2016-137691 2016-07-12

Publications (2)

Publication Number Publication Date
KR20180007309A KR20180007309A (ko) 2018-01-22
KR102172015B1 true KR102172015B1 (ko) 2020-10-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170084605A Active KR102172015B1 (ko) 2016-07-12 2017-07-04 임프린트 장치, 임프린트 방법 및 물품의 제조 방법

Country Status (2)

Country Link
JP (1) JP6758967B2 (enrdf_load_stackoverflow)
KR (1) KR102172015B1 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6821408B2 (ja) * 2016-11-28 2021-01-27 キヤノン株式会社 インプリント装置、インプリント方法、および物品の製造方法
CN113314451B (zh) * 2021-06-10 2022-08-02 哈尔滨工业大学 一种基于莫尔条纹的晶圆键合对准系统及方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009288301A (ja) 2008-05-27 2009-12-10 V Technology Co Ltd 近接露光装置
JP2011165264A (ja) 2010-02-09 2011-08-25 Hitachi High-Technologies Corp 両面インプリント装置の被転写体位置決め方法および両面インプリント装置
JP2012099790A (ja) 2010-10-08 2012-05-24 Canon Inc インプリント装置、及び、物品の製造方法
JP2015005542A (ja) * 2013-06-19 2015-01-08 キヤノン株式会社 光源装置、およびリソグラフィ装置
JP2015138963A (ja) * 2014-01-24 2015-07-30 キヤノン株式会社 インプリント装置、および物品の製造方法
JP2016096269A (ja) 2014-11-14 2016-05-26 キヤノン株式会社 インプリント装置及び物品の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005116978A (ja) * 2003-10-10 2005-04-28 Sumitomo Heavy Ind Ltd ナノインプリント装置及び方法
JP4958614B2 (ja) * 2006-04-18 2012-06-20 キヤノン株式会社 パターン転写装置、インプリント装置、パターン転写方法および位置合わせ装置
JP4795300B2 (ja) * 2006-04-18 2011-10-19 キヤノン株式会社 位置合わせ方法、インプリント方法、位置合わせ装置、インプリント装置、及び位置計測方法
NL2003347A (en) * 2008-09-11 2010-03-16 Asml Netherlands Bv Imprint lithography.
JP6304934B2 (ja) * 2012-05-08 2018-04-04 キヤノン株式会社 インプリント装置および物品の製造方法
JP6120678B2 (ja) * 2013-05-27 2017-04-26 キヤノン株式会社 インプリント方法、インプリント装置及びデバイス製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009288301A (ja) 2008-05-27 2009-12-10 V Technology Co Ltd 近接露光装置
JP2011165264A (ja) 2010-02-09 2011-08-25 Hitachi High-Technologies Corp 両面インプリント装置の被転写体位置決め方法および両面インプリント装置
JP2012099790A (ja) 2010-10-08 2012-05-24 Canon Inc インプリント装置、及び、物品の製造方法
JP2015005542A (ja) * 2013-06-19 2015-01-08 キヤノン株式会社 光源装置、およびリソグラフィ装置
JP2015138963A (ja) * 2014-01-24 2015-07-30 キヤノン株式会社 インプリント装置、および物品の製造方法
JP2016096269A (ja) 2014-11-14 2016-05-26 キヤノン株式会社 インプリント装置及び物品の製造方法

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JP2018010927A (ja) 2018-01-18
JP6758967B2 (ja) 2020-09-23
KR20180007309A (ko) 2018-01-22

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