JP6750590B2 - 炭化珪素半導体装置 - Google Patents

炭化珪素半導体装置 Download PDF

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Publication number
JP6750590B2
JP6750590B2 JP2017186917A JP2017186917A JP6750590B2 JP 6750590 B2 JP6750590 B2 JP 6750590B2 JP 2017186917 A JP2017186917 A JP 2017186917A JP 2017186917 A JP2017186917 A JP 2017186917A JP 6750590 B2 JP6750590 B2 JP 6750590B2
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JP
Japan
Prior art keywords
gate
insulating film
interlayer insulating
silicon carbide
region
Prior art date
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Active
Application number
JP2017186917A
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English (en)
Japanese (ja)
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JP2019062126A5 (enExample
JP2019062126A (ja
Inventor
周平 箕谷
周平 箕谷
昌弘 汲田
昌弘 汲田
成雅 副島
成雅 副島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Toyota Central R&D Labs Inc
Original Assignee
Denso Corp
Toyota Central R&D Labs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp, Toyota Central R&D Labs Inc filed Critical Denso Corp
Priority to JP2017186917A priority Critical patent/JP6750590B2/ja
Priority to CN201880061858.5A priority patent/CN111149214B/zh
Priority to PCT/JP2018/034870 priority patent/WO2019065462A1/ja
Publication of JP2019062126A publication Critical patent/JP2019062126A/ja
Publication of JP2019062126A5 publication Critical patent/JP2019062126A5/ja
Priority to US16/804,565 priority patent/US11171231B2/en
Application granted granted Critical
Publication of JP6750590B2 publication Critical patent/JP6750590B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP2017186917A 2017-09-27 2017-09-27 炭化珪素半導体装置 Active JP6750590B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017186917A JP6750590B2 (ja) 2017-09-27 2017-09-27 炭化珪素半導体装置
CN201880061858.5A CN111149214B (zh) 2017-09-27 2018-09-20 碳化硅半导体装置
PCT/JP2018/034870 WO2019065462A1 (ja) 2017-09-27 2018-09-20 炭化珪素半導体装置
US16/804,565 US11171231B2 (en) 2017-09-27 2020-02-28 Silicon carbide semiconductor device and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017186917A JP6750590B2 (ja) 2017-09-27 2017-09-27 炭化珪素半導体装置

Publications (3)

Publication Number Publication Date
JP2019062126A JP2019062126A (ja) 2019-04-18
JP2019062126A5 JP2019062126A5 (enExample) 2020-02-06
JP6750590B2 true JP6750590B2 (ja) 2020-09-02

Family

ID=65903712

Family Applications (1)

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JP2017186917A Active JP6750590B2 (ja) 2017-09-27 2017-09-27 炭化珪素半導体装置

Country Status (4)

Country Link
US (1) US11171231B2 (enExample)
JP (1) JP6750590B2 (enExample)
CN (1) CN111149214B (enExample)
WO (1) WO2019065462A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6981890B2 (ja) * 2018-01-29 2021-12-17 ルネサスエレクトロニクス株式会社 半導体装置
US11004940B1 (en) * 2020-07-31 2021-05-11 Genesic Semiconductor Inc. Manufacture of power devices having increased cross over current
JP7540334B2 (ja) * 2020-12-25 2024-08-27 株式会社デンソー 半導体装置の製造方法
JP7513565B2 (ja) * 2021-04-14 2024-07-09 株式会社デンソー スイッチング素子の製造方法
JP7613303B2 (ja) * 2021-07-06 2025-01-15 株式会社デンソー 炭化珪素半導体装置の製造方法
CN114695556A (zh) * 2022-03-30 2022-07-01 南京芯长征科技有限公司 高可靠性SiC沟槽型功率半导体器件及制备方法
WO2025134220A1 (ja) * 2023-12-19 2025-06-26 三菱電機株式会社 半導体装置、および、半導体装置の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09129877A (ja) * 1995-10-30 1997-05-16 Toyota Central Res & Dev Lab Inc 半導体装置の製造方法、絶縁ゲート型半導体装置の製造方法および絶縁ゲート型半導体装置
JP4096569B2 (ja) * 2002-01-31 2008-06-04 株式会社デンソー 炭化珪素半導体装置とその製造方法
JP4996848B2 (ja) * 2005-11-30 2012-08-08 株式会社東芝 半導体装置
JP2008098593A (ja) * 2006-09-15 2008-04-24 Ricoh Co Ltd 半導体装置及びその製造方法
EP2091083A3 (en) * 2008-02-13 2009-10-14 Denso Corporation Silicon carbide semiconductor device including a deep layer
US8507945B2 (en) 2008-03-31 2013-08-13 Mitsubishi Electric Corporation Semiconductor device including an insulated gate bipolar transistor (IGBT)
JP5588670B2 (ja) * 2008-12-25 2014-09-10 ローム株式会社 半導体装置
KR101473141B1 (ko) * 2011-04-19 2014-12-15 닛산 지도우샤 가부시키가이샤 반도체 장치 및 그 제조 방법
JP2013105841A (ja) 2011-11-11 2013-05-30 Toshiba Corp 半導体装置とその製造方法
JP5884617B2 (ja) * 2012-04-19 2016-03-15 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JPWO2014054121A1 (ja) * 2012-10-02 2016-08-25 三菱電機株式会社 半導体装置
JP6354525B2 (ja) * 2014-11-06 2018-07-11 株式会社デンソー 炭化珪素半導体装置の製造方法
JP6569216B2 (ja) * 2014-12-22 2019-09-04 日産自動車株式会社 絶縁ゲート型半導体装置及びその製造方法

Also Published As

Publication number Publication date
US20200203526A1 (en) 2020-06-25
CN111149214A (zh) 2020-05-12
CN111149214B (zh) 2023-11-03
WO2019065462A1 (ja) 2019-04-04
US11171231B2 (en) 2021-11-09
JP2019062126A (ja) 2019-04-18

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