CN111149214B - 碳化硅半导体装置 - Google Patents

碳化硅半导体装置 Download PDF

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Publication number
CN111149214B
CN111149214B CN201880061858.5A CN201880061858A CN111149214B CN 111149214 B CN111149214 B CN 111149214B CN 201880061858 A CN201880061858 A CN 201880061858A CN 111149214 B CN111149214 B CN 111149214B
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CN
China
Prior art keywords
gate
insulating film
interlayer insulating
region
silicon carbide
Prior art date
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Active
Application number
CN201880061858.5A
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English (en)
Chinese (zh)
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CN111149214A (zh
Inventor
箕谷周平
汲田昌弘
副岛成雅
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Denso Corp
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Denso Corp
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Publication of CN111149214A publication Critical patent/CN111149214A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
CN201880061858.5A 2017-09-27 2018-09-20 碳化硅半导体装置 Active CN111149214B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017186917A JP6750590B2 (ja) 2017-09-27 2017-09-27 炭化珪素半導体装置
JP2017-186917 2017-09-27
PCT/JP2018/034870 WO2019065462A1 (ja) 2017-09-27 2018-09-20 炭化珪素半導体装置

Publications (2)

Publication Number Publication Date
CN111149214A CN111149214A (zh) 2020-05-12
CN111149214B true CN111149214B (zh) 2023-11-03

Family

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Family Applications (1)

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CN201880061858.5A Active CN111149214B (zh) 2017-09-27 2018-09-20 碳化硅半导体装置

Country Status (4)

Country Link
US (1) US11171231B2 (enExample)
JP (1) JP6750590B2 (enExample)
CN (1) CN111149214B (enExample)
WO (1) WO2019065462A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6981890B2 (ja) * 2018-01-29 2021-12-17 ルネサスエレクトロニクス株式会社 半導体装置
US11004940B1 (en) * 2020-07-31 2021-05-11 Genesic Semiconductor Inc. Manufacture of power devices having increased cross over current
JP7540334B2 (ja) * 2020-12-25 2024-08-27 株式会社デンソー 半導体装置の製造方法
JP7513565B2 (ja) * 2021-04-14 2024-07-09 株式会社デンソー スイッチング素子の製造方法
JP7613303B2 (ja) * 2021-07-06 2025-01-15 株式会社デンソー 炭化珪素半導体装置の製造方法
CN114695556B (zh) * 2022-03-30 2026-01-06 江苏芯长征微电子集团股份有限公司 高可靠性SiC沟槽型功率半导体器件及制备方法
CN122423319A (zh) * 2023-12-19 2026-07-17 三菱电机株式会社 半导体装置以及半导体装置的制造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003224277A (ja) * 2002-01-31 2003-08-08 Denso Corp 炭化珪素半導体装置とその製造方法
CN101764160A (zh) * 2008-12-25 2010-06-30 罗姆股份有限公司 半导体装置
CN101983431A (zh) * 2008-03-31 2011-03-02 三菱电机株式会社 半导体装置
CN103493208A (zh) * 2011-04-19 2014-01-01 日产自动车株式会社 半导体装置及其制造方法
CN104247026A (zh) * 2012-04-19 2014-12-24 株式会社电装 碳化硅半导体装置及其制造方法
CN105590962A (zh) * 2014-11-06 2016-05-18 丰田自动车株式会社 碳化硅半导体装置和用于制造碳化硅半导体装置的方法
JP2016119392A (ja) * 2014-12-22 2016-06-30 日産自動車株式会社 絶縁ゲート型半導体装置及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09129877A (ja) * 1995-10-30 1997-05-16 Toyota Central Res & Dev Lab Inc 半導体装置の製造方法、絶縁ゲート型半導体装置の製造方法および絶縁ゲート型半導体装置
JP4996848B2 (ja) 2005-11-30 2012-08-08 株式会社東芝 半導体装置
JP2008098593A (ja) * 2006-09-15 2008-04-24 Ricoh Co Ltd 半導体装置及びその製造方法
EP2091083A3 (en) * 2008-02-13 2009-10-14 Denso Corporation Silicon carbide semiconductor device including a deep layer
JP2013105841A (ja) 2011-11-11 2013-05-30 Toshiba Corp 半導体装置とその製造方法
WO2014054121A1 (ja) * 2012-10-02 2014-04-10 三菱電機株式会社 半導体装置、半導体装置の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003224277A (ja) * 2002-01-31 2003-08-08 Denso Corp 炭化珪素半導体装置とその製造方法
CN101983431A (zh) * 2008-03-31 2011-03-02 三菱电机株式会社 半导体装置
CN101764160A (zh) * 2008-12-25 2010-06-30 罗姆股份有限公司 半导体装置
CN103493208A (zh) * 2011-04-19 2014-01-01 日产自动车株式会社 半导体装置及其制造方法
CN104247026A (zh) * 2012-04-19 2014-12-24 株式会社电装 碳化硅半导体装置及其制造方法
CN105590962A (zh) * 2014-11-06 2016-05-18 丰田自动车株式会社 碳化硅半导体装置和用于制造碳化硅半导体装置的方法
JP2016119392A (ja) * 2014-12-22 2016-06-30 日産自動車株式会社 絶縁ゲート型半導体装置及びその製造方法

Also Published As

Publication number Publication date
CN111149214A (zh) 2020-05-12
WO2019065462A1 (ja) 2019-04-04
JP2019062126A (ja) 2019-04-18
US11171231B2 (en) 2021-11-09
US20200203526A1 (en) 2020-06-25
JP6750590B2 (ja) 2020-09-02

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