JP6749727B2 - 検査用ウエーハ及び検査用ウエーハの使用方法 - Google Patents
検査用ウエーハ及び検査用ウエーハの使用方法 Download PDFInfo
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- JP6749727B2 JP6749727B2 JP2016202228A JP2016202228A JP6749727B2 JP 6749727 B2 JP6749727 B2 JP 6749727B2 JP 2016202228 A JP2016202228 A JP 2016202228A JP 2016202228 A JP2016202228 A JP 2016202228A JP 6749727 B2 JP6749727 B2 JP 6749727B2
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- 238000007689 inspection Methods 0.000 title claims description 106
- 238000000034 method Methods 0.000 title claims description 25
- 238000012545 processing Methods 0.000 claims description 80
- 229910052751 metal Inorganic materials 0.000 claims description 77
- 239000002184 metal Substances 0.000 claims description 77
- 239000011888 foil Substances 0.000 claims description 76
- 239000000758 substrate Substances 0.000 claims description 32
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002407 reforming Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
41 検査用基板
42 下地層
43 金属箔
D デバイス
F リングフレーム
L 分割予定ライン
M 改質層
T ダイシングテープ
W ウエーハ
WA 検査用ウエーハ
Claims (2)
- 表面に分割予定ラインによって区画され複数のデバイスが形成されたウエーハの裏面からウエーハを構成する基板に対して透過性波長のレーザ光線を照射させ基板の内部で集光させ分割予定ラインに沿って基板の内部に改質層を形成するレーザ加工装置に用いて、該レーザ光線が集光され該改質層を形成に寄与しないレーザ光線が該改質層からデバイスに影響を与える漏れ光を検査する検査用ウエーハであって、
検査用基板と、該検査用基板の表面全面に所定の厚みで形成した下地層と、該下地層に積層させた金属箔とから構成され、
該下地層は、デバイスに影響を与える漏れ光のみを該金属箔で検出可能な厚みに形成された検査用ウエーハ。 - 請求項1記載の検査用ウエーハの使用方法であって、
該検査用ウエーハの裏面から該検査用基板に対して透過性波長のレーザ光線を照射させ該検査用基板の内部で集光させた集光点を該検査用ウエーハの面方向で直線に移動させ一直線の改質層を形成する改質層形成工程と、
該改質層形成工程の後、該検査用ウエーハの該金属箔を撮像し、該金属箔の表面に表れる金属箔変形が起きた最大幅を測定する幅測定工程と、
該幅測定工程で測定した金属箔変形の最大幅が分割予定ラインの幅内となるようにレーザ光線を調整する調整工程と、を備える検査用ウエーハの使用方法。
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JP2016202228A JP6749727B2 (ja) | 2016-10-14 | 2016-10-14 | 検査用ウエーハ及び検査用ウエーハの使用方法 |
TW106131106A TWI729205B (zh) | 2016-10-14 | 2017-09-12 | 檢查用晶圓及檢查用晶圓的使用方法 |
CN201710939785.2A CN107958847B (zh) | 2016-10-14 | 2017-10-11 | 检查用晶片和检查用晶片的使用方法 |
KR1020170132334A KR102304148B1 (ko) | 2016-10-14 | 2017-10-12 | 검사용 웨이퍼 및 검사용 웨이퍼의 사용 방법 |
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JP2016202228A JP6749727B2 (ja) | 2016-10-14 | 2016-10-14 | 検査用ウエーハ及び検査用ウエーハの使用方法 |
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JP2018064049A JP2018064049A (ja) | 2018-04-19 |
JP6749727B2 true JP6749727B2 (ja) | 2020-09-02 |
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KR (1) | KR102304148B1 (ja) |
CN (1) | CN107958847B (ja) |
TW (1) | TWI729205B (ja) |
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JP7417411B2 (ja) * | 2019-02-13 | 2024-01-18 | 株式会社ディスコ | 確認方法 |
JP7219400B2 (ja) * | 2019-02-19 | 2023-02-08 | 株式会社東京精密 | ワーク検査方法及び装置並びにワーク加工方法 |
JP7289592B2 (ja) * | 2019-03-26 | 2023-06-12 | 株式会社ディスコ | 検査用基板及び検査方法 |
JP2021141247A (ja) * | 2020-03-06 | 2021-09-16 | 浜松ホトニクス株式会社 | 検査装置及び検査方法 |
JP7524519B2 (ja) | 2020-07-06 | 2024-07-30 | 株式会社東京精密 | ワーク検査方法及び装置並びにワーク加工方法 |
JP7465425B2 (ja) | 2020-07-14 | 2024-04-11 | 株式会社東京精密 | 検査用ウェーハの検査方法及び検査装置並びに検査用ウェーハ |
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JPH10221268A (ja) * | 1997-02-05 | 1998-08-21 | Advantest Corp | ウェーハの表面状態検出方法および装置 |
JP3408805B2 (ja) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | 切断起点領域形成方法及び加工対象物切断方法 |
JP5968150B2 (ja) * | 2012-08-03 | 2016-08-10 | 株式会社ディスコ | ウエーハの加工方法 |
US9040389B2 (en) * | 2012-10-09 | 2015-05-26 | Infineon Technologies Ag | Singulation processes |
JP6062315B2 (ja) * | 2013-04-24 | 2017-01-18 | 株式会社ディスコ | ウエーハの加工方法 |
JP6246561B2 (ja) * | 2013-11-01 | 2017-12-13 | 株式会社ディスコ | レーザー加工方法およびレーザー加工装置 |
CN103811291B (zh) * | 2013-12-20 | 2018-01-23 | 京东方科技集团股份有限公司 | 一种阵列基板制作方法、膜层刻蚀防损伤监控方法及设备 |
JP6305853B2 (ja) * | 2014-07-08 | 2018-04-04 | 株式会社ディスコ | ウエーハの加工方法 |
JP6347714B2 (ja) * | 2014-10-02 | 2018-06-27 | 株式会社ディスコ | ウエーハの加工方法 |
JP6388522B2 (ja) * | 2014-10-27 | 2018-09-12 | 株式会社ディスコ | レーザー加工装置 |
JP6433264B2 (ja) * | 2014-11-27 | 2018-12-05 | 株式会社ディスコ | 透過レーザービームの検出方法 |
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- 2017-10-11 CN CN201710939785.2A patent/CN107958847B/zh active Active
- 2017-10-12 KR KR1020170132334A patent/KR102304148B1/ko active IP Right Grant
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CN107958847B (zh) | 2023-06-09 |
JP2018064049A (ja) | 2018-04-19 |
KR102304148B1 (ko) | 2021-09-17 |
TW201816864A (zh) | 2018-05-01 |
TWI729205B (zh) | 2021-06-01 |
KR20180041591A (ko) | 2018-04-24 |
CN107958847A (zh) | 2018-04-24 |
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