TWI729205B - 檢查用晶圓及檢查用晶圓的使用方法 - Google Patents

檢查用晶圓及檢查用晶圓的使用方法 Download PDF

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Publication number
TWI729205B
TWI729205B TW106131106A TW106131106A TWI729205B TW I729205 B TWI729205 B TW I729205B TW 106131106 A TW106131106 A TW 106131106A TW 106131106 A TW106131106 A TW 106131106A TW I729205 B TWI729205 B TW I729205B
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TW
Taiwan
Prior art keywords
wafer
inspection
metal foil
substrate
laser
Prior art date
Application number
TW106131106A
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English (en)
Chinese (zh)
Other versions
TW201816864A (zh
Inventor
崔星一
伊賀勇人
Original Assignee
日商迪思科股份有限公司
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Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW201816864A publication Critical patent/TW201816864A/zh
Application granted granted Critical
Publication of TWI729205B publication Critical patent/TWI729205B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW106131106A 2016-10-14 2017-09-12 檢查用晶圓及檢查用晶圓的使用方法 TWI729205B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-202228 2016-10-14
JP2016202228A JP6749727B2 (ja) 2016-10-14 2016-10-14 検査用ウエーハ及び検査用ウエーハの使用方法

Publications (2)

Publication Number Publication Date
TW201816864A TW201816864A (zh) 2018-05-01
TWI729205B true TWI729205B (zh) 2021-06-01

Family

ID=61953969

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106131106A TWI729205B (zh) 2016-10-14 2017-09-12 檢查用晶圓及檢查用晶圓的使用方法

Country Status (4)

Country Link
JP (1) JP6749727B2 (ja)
KR (1) KR102304148B1 (ja)
CN (1) CN107958847B (ja)
TW (1) TWI729205B (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7417411B2 (ja) * 2019-02-13 2024-01-18 株式会社ディスコ 確認方法
JP7219400B2 (ja) * 2019-02-19 2023-02-08 株式会社東京精密 ワーク検査方法及び装置並びにワーク加工方法
JP7289592B2 (ja) * 2019-03-26 2023-06-12 株式会社ディスコ 検査用基板及び検査方法
JP7563886B2 (ja) * 2020-03-06 2024-10-08 浜松ホトニクス株式会社 検査装置及び検査方法
JP7524519B2 (ja) 2020-07-06 2024-07-30 株式会社東京精密 ワーク検査方法及び装置並びにワーク加工方法
JP7465425B2 (ja) 2020-07-14 2024-04-11 株式会社東京精密 検査用ウェーハの検査方法及び検査装置並びに検査用ウェーハ

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014033116A (ja) * 2012-08-03 2014-02-20 Disco Abrasive Syst Ltd ウエーハの加工方法
TW201503250A (zh) * 2013-04-24 2015-01-16 Disco Corp 晶圓之加工方法
TW201613713A (en) * 2014-10-02 2016-04-16 Disco Corp Wafer processing method
JP2016086079A (ja) * 2014-10-27 2016-05-19 株式会社ディスコ レーザー加工装置
TW201618876A (zh) * 2014-11-27 2016-06-01 Disco Corp 穿透雷射光束的檢測方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10221268A (ja) * 1997-02-05 1998-08-21 Advantest Corp ウェーハの表面状態検出方法および装置
JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
US9040389B2 (en) * 2012-10-09 2015-05-26 Infineon Technologies Ag Singulation processes
JP6246561B2 (ja) * 2013-11-01 2017-12-13 株式会社ディスコ レーザー加工方法およびレーザー加工装置
CN103811291B (zh) * 2013-12-20 2018-01-23 京东方科技集团股份有限公司 一种阵列基板制作方法、膜层刻蚀防损伤监控方法及设备
JP6305853B2 (ja) * 2014-07-08 2018-04-04 株式会社ディスコ ウエーハの加工方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014033116A (ja) * 2012-08-03 2014-02-20 Disco Abrasive Syst Ltd ウエーハの加工方法
TW201503250A (zh) * 2013-04-24 2015-01-16 Disco Corp 晶圓之加工方法
TW201613713A (en) * 2014-10-02 2016-04-16 Disco Corp Wafer processing method
JP2016086079A (ja) * 2014-10-27 2016-05-19 株式会社ディスコ レーザー加工装置
TW201618876A (zh) * 2014-11-27 2016-06-01 Disco Corp 穿透雷射光束的檢測方法

Also Published As

Publication number Publication date
JP2018064049A (ja) 2018-04-19
KR20180041591A (ko) 2018-04-24
KR102304148B1 (ko) 2021-09-17
CN107958847B (zh) 2023-06-09
CN107958847A (zh) 2018-04-24
JP6749727B2 (ja) 2020-09-02
TW201816864A (zh) 2018-05-01

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