JP6748117B2 - ファームウェア更新のための強誘電メモリの拡張 - Google Patents

ファームウェア更新のための強誘電メモリの拡張 Download PDF

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Publication number
JP6748117B2
JP6748117B2 JP2017563054A JP2017563054A JP6748117B2 JP 6748117 B2 JP6748117 B2 JP 6748117B2 JP 2017563054 A JP2017563054 A JP 2017563054A JP 2017563054 A JP2017563054 A JP 2017563054A JP 6748117 B2 JP6748117 B2 JP 6748117B2
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Prior art keywords
cell
fram
memory
memory cells
row
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JP2017563054A
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Japanese (ja)
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JP2018526760A (ja
JP2018526760A5 (enExample
Inventor
ブレデロー ラルフ
ブレデロー ラルフ
ミゲル ギリェンエルナンデス オスカー
ミゲル ギリェンエルナンデス オスカー
ウォンゲウン チュン ペーター
ウォンゲウン チュン ペーター
Original Assignee
日本テキサス・インスツルメンツ合同会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ ドイチュランド ゲーエムベーハー
テキサス インスツルメンツ ドイチュランド ゲーエムベーハー
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Publication of JP2018526760A5 publication Critical patent/JP2018526760A5/ja
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F8/00—Arrangements for software engineering
    • G06F8/60—Software deployment
    • G06F8/65—Updates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2253—Address circuits or decoders

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Software Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Security & Cryptography (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
  • Hardware Redundancy (AREA)
JP2017563054A 2015-06-02 2016-06-02 ファームウェア更新のための強誘電メモリの拡張 Active JP6748117B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562169930P 2015-06-02 2015-06-02
US62/169,930 2015-06-02
US15/139,865 US10120674B2 (en) 2015-06-02 2016-04-27 Ferroelectric memory expansion for firmware updates
US15/139,865 2016-04-27
PCT/US2016/035578 WO2016196835A1 (en) 2015-06-02 2016-06-02 Ferroelectric memory expansion for firmware updates

Publications (3)

Publication Number Publication Date
JP2018526760A JP2018526760A (ja) 2018-09-13
JP2018526760A5 JP2018526760A5 (enExample) 2019-06-27
JP6748117B2 true JP6748117B2 (ja) 2020-08-26

Family

ID=57442038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017563054A Active JP6748117B2 (ja) 2015-06-02 2016-06-02 ファームウェア更新のための強誘電メモリの拡張

Country Status (4)

Country Link
US (2) US10120674B2 (enExample)
JP (1) JP6748117B2 (enExample)
CN (1) CN107615390B (enExample)
WO (1) WO2016196835A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9892776B2 (en) * 2016-06-13 2018-02-13 Micron Technology, Inc. Half density ferroelectric memory and operation
JP6625942B2 (ja) * 2016-07-29 2019-12-25 株式会社東芝 半導体記憶装置
US11256442B2 (en) 2018-01-05 2022-02-22 Stmicroelectronics S.R.L. Real-time update method for a differential memory, differential memory and electronic system
IT201800000581A1 (it) * 2018-01-05 2019-07-05 St Microelectronics Srl Metodo di gestione dell'accesso in tempo reale a una memoria differenziale, memoria differenziale e sistema elettronico includente la memoria differenziale
IT201800000580A1 (it) * 2018-01-05 2019-07-05 St Microelectronics Srl Metodo di aggiornamento in tempo reale di una memoria differenziale con accessibilita' continua in lettura, memoria differenziale e sistema elettronico
US10347322B1 (en) 2018-02-20 2019-07-09 Micron Technology, Inc. Apparatuses having memory strings compared to one another through a sense amplifier
US10825509B2 (en) * 2018-09-28 2020-11-03 Intel Corporation Full-rail digital read compute-in-memory circuit
US11087843B1 (en) 2020-02-10 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Memory with FRAM and SRAM of IC and method for accessing memory
US20230342289A1 (en) * 2022-04-21 2023-10-26 Arm Limited Apparatus and method for managing capabilities
US12380932B2 (en) * 2023-04-06 2025-08-05 Silicon Storage Technology, Inc. Row decoder and row address scheme in a memory system

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG79200A1 (en) * 1995-08-21 2001-03-20 Matsushita Electric Industrial Co Ltd Ferroelectric memory devices and method for testing them
JPH09288891A (ja) * 1996-04-19 1997-11-04 Matsushita Electron Corp 半導体メモリ装置
JPH1079196A (ja) * 1996-09-03 1998-03-24 Sony Corp 強誘電体記憶装置
US6141247A (en) * 1997-10-24 2000-10-31 Micron Technology, Inc. Non-volatile data storage unit and method of controlling same
US5892728A (en) 1997-11-14 1999-04-06 Ramtron International Corporation Column decoder configuration for a 1T/1C ferroelectric memory
US6330696B1 (en) * 1998-08-13 2001-12-11 Agere Systems Guardian Corp Self-testing of DRAMs for multiple faults
JP2003208798A (ja) * 2002-01-11 2003-07-25 Matsushita Electric Ind Co Ltd 不揮発性半導体メモリ装置およびストレス印加方法
JP2004288282A (ja) * 2003-03-20 2004-10-14 Fujitsu Ltd 半導体装置
JP2005092915A (ja) * 2003-09-12 2005-04-07 Toshiba Corp 半導体集積回路装置およびその情報記憶方法
JP4186119B2 (ja) * 2005-07-27 2008-11-26 セイコーエプソン株式会社 強誘電体メモリ装置
KR100720230B1 (ko) * 2006-07-27 2007-05-23 주식회사 하이닉스반도체 실리콘 기판을 이용한 불휘발성 강유전체 메모리 장치, 그형성 방법 및 그 리프레쉬 방법
US7667997B2 (en) 2007-12-27 2010-02-23 Texas Instruments Incorporated Method to improve ferroelectronic memory performance and reliability
KR101398634B1 (ko) 2008-07-11 2014-05-22 삼성전자주식회사 배선 구조체 및 이를 채택하는 전자 소자
JP2011044218A (ja) 2009-08-24 2011-03-03 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
US20160358640A1 (en) 2016-12-08
CN107615390B (zh) 2021-10-15
US20190087171A1 (en) 2019-03-21
US10120674B2 (en) 2018-11-06
JP2018526760A (ja) 2018-09-13
WO2016196835A1 (en) 2016-12-08
CN107615390A (zh) 2018-01-19
US10545752B2 (en) 2020-01-28

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