CN107615390B - 用于固件更新的铁电存储器扩充的装置和方法 - Google Patents

用于固件更新的铁电存储器扩充的装置和方法 Download PDF

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Publication number
CN107615390B
CN107615390B CN201680032010.0A CN201680032010A CN107615390B CN 107615390 B CN107615390 B CN 107615390B CN 201680032010 A CN201680032010 A CN 201680032010A CN 107615390 B CN107615390 B CN 107615390B
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China
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cell
fram
memory cells
memory
row
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CN107615390A (zh
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R·布里德劳
O·M·吉轮-埃尔南德斯
P·W·钟
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Texas Instruments Inc
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Texas Instruments Inc
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F8/00—Arrangements for software engineering
    • G06F8/60—Software deployment
    • G06F8/65—Updates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2253—Address circuits or decoders

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Software Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Security & Cryptography (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
  • Hardware Redundancy (AREA)
CN201680032010.0A 2015-06-02 2016-06-02 用于固件更新的铁电存储器扩充的装置和方法 Active CN107615390B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562169930P 2015-06-02 2015-06-02
US62/169,930 2015-06-02
US15/139,865 US10120674B2 (en) 2015-06-02 2016-04-27 Ferroelectric memory expansion for firmware updates
US15/139,865 2016-04-27
PCT/US2016/035578 WO2016196835A1 (en) 2015-06-02 2016-06-02 Ferroelectric memory expansion for firmware updates

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Publication Number Publication Date
CN107615390A CN107615390A (zh) 2018-01-19
CN107615390B true CN107615390B (zh) 2021-10-15

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US (2) US10120674B2 (enExample)
JP (1) JP6748117B2 (enExample)
CN (1) CN107615390B (enExample)
WO (1) WO2016196835A1 (enExample)

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Publication number Priority date Publication date Assignee Title
US9892776B2 (en) * 2016-06-13 2018-02-13 Micron Technology, Inc. Half density ferroelectric memory and operation
JP6625942B2 (ja) * 2016-07-29 2019-12-25 株式会社東芝 半導体記憶装置
US11256442B2 (en) 2018-01-05 2022-02-22 Stmicroelectronics S.R.L. Real-time update method for a differential memory, differential memory and electronic system
IT201800000581A1 (it) * 2018-01-05 2019-07-05 St Microelectronics Srl Metodo di gestione dell'accesso in tempo reale a una memoria differenziale, memoria differenziale e sistema elettronico includente la memoria differenziale
IT201800000580A1 (it) * 2018-01-05 2019-07-05 St Microelectronics Srl Metodo di aggiornamento in tempo reale di una memoria differenziale con accessibilita' continua in lettura, memoria differenziale e sistema elettronico
US10347322B1 (en) 2018-02-20 2019-07-09 Micron Technology, Inc. Apparatuses having memory strings compared to one another through a sense amplifier
US10825509B2 (en) * 2018-09-28 2020-11-03 Intel Corporation Full-rail digital read compute-in-memory circuit
US11087843B1 (en) 2020-02-10 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Memory with FRAM and SRAM of IC and method for accessing memory
US20230342289A1 (en) * 2022-04-21 2023-10-26 Arm Limited Apparatus and method for managing capabilities
US12380932B2 (en) * 2023-04-06 2025-08-05 Silicon Storage Technology, Inc. Row decoder and row address scheme in a memory system

Citations (7)

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CN1189234A (zh) * 1996-04-19 1998-07-29 松下电子工业株式会社 半导体存储器
EP0759620B1 (en) * 1995-08-21 2002-04-03 Matsushita Electric Industrial Co., Ltd. Ferroelectric memory devices and method for testing them
JP2003208798A (ja) * 2002-01-11 2003-07-25 Matsushita Electric Ind Co Ltd 不揮発性半導体メモリ装置およびストレス印加方法
CN1532842A (zh) * 2003-03-20 2004-09-29 ��ʿͨ��ʽ���� 半导体器件
US7046540B2 (en) * 2003-09-12 2006-05-16 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device and information storage method therefor
CN1905062A (zh) * 2005-07-27 2007-01-31 精工爱普生株式会社 铁电存储装置
KR100720230B1 (ko) * 2006-07-27 2007-05-23 주식회사 하이닉스반도체 실리콘 기판을 이용한 불휘발성 강유전체 메모리 장치, 그형성 방법 및 그 리프레쉬 방법

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JPH1079196A (ja) * 1996-09-03 1998-03-24 Sony Corp 強誘電体記憶装置
US6141247A (en) * 1997-10-24 2000-10-31 Micron Technology, Inc. Non-volatile data storage unit and method of controlling same
US5892728A (en) 1997-11-14 1999-04-06 Ramtron International Corporation Column decoder configuration for a 1T/1C ferroelectric memory
US6330696B1 (en) * 1998-08-13 2001-12-11 Agere Systems Guardian Corp Self-testing of DRAMs for multiple faults
US7667997B2 (en) 2007-12-27 2010-02-23 Texas Instruments Incorporated Method to improve ferroelectronic memory performance and reliability
KR101398634B1 (ko) 2008-07-11 2014-05-22 삼성전자주식회사 배선 구조체 및 이를 채택하는 전자 소자
JP2011044218A (ja) 2009-08-24 2011-03-03 Toshiba Corp 半導体記憶装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0759620B1 (en) * 1995-08-21 2002-04-03 Matsushita Electric Industrial Co., Ltd. Ferroelectric memory devices and method for testing them
CN1189234A (zh) * 1996-04-19 1998-07-29 松下电子工业株式会社 半导体存储器
JP2003208798A (ja) * 2002-01-11 2003-07-25 Matsushita Electric Ind Co Ltd 不揮発性半導体メモリ装置およびストレス印加方法
CN1532842A (zh) * 2003-03-20 2004-09-29 ��ʿͨ��ʽ���� 半导体器件
US7046540B2 (en) * 2003-09-12 2006-05-16 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device and information storage method therefor
CN1905062A (zh) * 2005-07-27 2007-01-31 精工爱普生株式会社 铁电存储装置
KR100720230B1 (ko) * 2006-07-27 2007-05-23 주식회사 하이닉스반도체 실리콘 기판을 이용한 불휘발성 강유전체 메모리 장치, 그형성 방법 및 그 리프레쉬 방법

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Publication number Publication date
US20160358640A1 (en) 2016-12-08
US20190087171A1 (en) 2019-03-21
US10120674B2 (en) 2018-11-06
JP2018526760A (ja) 2018-09-13
WO2016196835A1 (en) 2016-12-08
CN107615390A (zh) 2018-01-19
JP6748117B2 (ja) 2020-08-26
US10545752B2 (en) 2020-01-28

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