JP2018526760A5 - - Google Patents

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Publication number
JP2018526760A5
JP2018526760A5 JP2017563054A JP2017563054A JP2018526760A5 JP 2018526760 A5 JP2018526760 A5 JP 2018526760A5 JP 2017563054 A JP2017563054 A JP 2017563054A JP 2017563054 A JP2017563054 A JP 2017563054A JP 2018526760 A5 JP2018526760 A5 JP 2018526760A5
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JP
Japan
Prior art keywords
memory cells
cell
memory
fram
row
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JP2017563054A
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English (en)
Japanese (ja)
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JP2018526760A (ja
JP6748117B2 (ja
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Priority claimed from US15/139,865 external-priority patent/US10120674B2/en
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Publication of JP2018526760A5 publication Critical patent/JP2018526760A5/ja
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Publication of JP6748117B2 publication Critical patent/JP6748117B2/ja
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JP2017563054A 2015-06-02 2016-06-02 ファームウェア更新のための強誘電メモリの拡張 Active JP6748117B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562169930P 2015-06-02 2015-06-02
US62/169,930 2015-06-02
US15/139,865 US10120674B2 (en) 2015-06-02 2016-04-27 Ferroelectric memory expansion for firmware updates
US15/139,865 2016-04-27
PCT/US2016/035578 WO2016196835A1 (en) 2015-06-02 2016-06-02 Ferroelectric memory expansion for firmware updates

Publications (3)

Publication Number Publication Date
JP2018526760A JP2018526760A (ja) 2018-09-13
JP2018526760A5 true JP2018526760A5 (enExample) 2019-06-27
JP6748117B2 JP6748117B2 (ja) 2020-08-26

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ID=57442038

Family Applications (1)

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JP2017563054A Active JP6748117B2 (ja) 2015-06-02 2016-06-02 ファームウェア更新のための強誘電メモリの拡張

Country Status (4)

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US (2) US10120674B2 (enExample)
JP (1) JP6748117B2 (enExample)
CN (1) CN107615390B (enExample)
WO (1) WO2016196835A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9892776B2 (en) * 2016-06-13 2018-02-13 Micron Technology, Inc. Half density ferroelectric memory and operation
JP6625942B2 (ja) * 2016-07-29 2019-12-25 株式会社東芝 半導体記憶装置
US11256442B2 (en) 2018-01-05 2022-02-22 Stmicroelectronics S.R.L. Real-time update method for a differential memory, differential memory and electronic system
IT201800000581A1 (it) * 2018-01-05 2019-07-05 St Microelectronics Srl Metodo di gestione dell'accesso in tempo reale a una memoria differenziale, memoria differenziale e sistema elettronico includente la memoria differenziale
IT201800000580A1 (it) * 2018-01-05 2019-07-05 St Microelectronics Srl Metodo di aggiornamento in tempo reale di una memoria differenziale con accessibilita' continua in lettura, memoria differenziale e sistema elettronico
US10347322B1 (en) 2018-02-20 2019-07-09 Micron Technology, Inc. Apparatuses having memory strings compared to one another through a sense amplifier
US10825509B2 (en) * 2018-09-28 2020-11-03 Intel Corporation Full-rail digital read compute-in-memory circuit
US11087843B1 (en) 2020-02-10 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Memory with FRAM and SRAM of IC and method for accessing memory
US20230342289A1 (en) * 2022-04-21 2023-10-26 Arm Limited Apparatus and method for managing capabilities
US12380932B2 (en) * 2023-04-06 2025-08-05 Silicon Storage Technology, Inc. Row decoder and row address scheme in a memory system

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG79200A1 (en) * 1995-08-21 2001-03-20 Matsushita Electric Industrial Co Ltd Ferroelectric memory devices and method for testing them
JPH09288891A (ja) * 1996-04-19 1997-11-04 Matsushita Electron Corp 半導体メモリ装置
JPH1079196A (ja) * 1996-09-03 1998-03-24 Sony Corp 強誘電体記憶装置
US6141247A (en) * 1997-10-24 2000-10-31 Micron Technology, Inc. Non-volatile data storage unit and method of controlling same
US5892728A (en) 1997-11-14 1999-04-06 Ramtron International Corporation Column decoder configuration for a 1T/1C ferroelectric memory
US6330696B1 (en) * 1998-08-13 2001-12-11 Agere Systems Guardian Corp Self-testing of DRAMs for multiple faults
JP2003208798A (ja) * 2002-01-11 2003-07-25 Matsushita Electric Ind Co Ltd 不揮発性半導体メモリ装置およびストレス印加方法
JP2004288282A (ja) * 2003-03-20 2004-10-14 Fujitsu Ltd 半導体装置
JP2005092915A (ja) * 2003-09-12 2005-04-07 Toshiba Corp 半導体集積回路装置およびその情報記憶方法
JP4186119B2 (ja) * 2005-07-27 2008-11-26 セイコーエプソン株式会社 強誘電体メモリ装置
KR100720230B1 (ko) * 2006-07-27 2007-05-23 주식회사 하이닉스반도체 실리콘 기판을 이용한 불휘발성 강유전체 메모리 장치, 그형성 방법 및 그 리프레쉬 방법
US7667997B2 (en) 2007-12-27 2010-02-23 Texas Instruments Incorporated Method to improve ferroelectronic memory performance and reliability
KR101398634B1 (ko) 2008-07-11 2014-05-22 삼성전자주식회사 배선 구조체 및 이를 채택하는 전자 소자
JP2011044218A (ja) 2009-08-24 2011-03-03 Toshiba Corp 半導体記憶装置

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