JP6742418B2 - パワーモジュール及びパワーモジュールの製造方法 - Google Patents
パワーモジュール及びパワーモジュールの製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
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- 239000004020 conductor Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 2
- 238000001465 metallisation Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
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- 230000005670 electromagnetic radiation Effects 0.000 description 3
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- 238000004806 packaging method and process Methods 0.000 description 2
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 2
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008571 general function Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
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- H01L21/486—Via connections through the substrate with or without pins
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/023—Reduction of cross-talk, noise or electromagnetic interference using auxiliary mounted passive components or auxiliary substances
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/023—Reduction of cross-talk, noise or electromagnetic interference using auxiliary mounted passive components or auxiliary substances
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10166—Transistor
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
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Description
−各サブモジュールが絶縁層及び導電層から形成された複数のサブモジュールを準備するステップと、
−熱伝導性かつ導電性の材料を使用してサブモジュール同士を組み立てることによって、多層構造を形成するステップと、
−多層構造内に少なくとも1つのパワーダイを埋設するステップと、
−多層構造内に、少なくとも1つのパワーダイに対しての電力供給手段を遮断するための少なくとも1つのキャパシタを埋設するステップと、
−少なくとも1つのパワーダイに対しての少なくとも1つの駆動回路を、多層構造の表面上に取り付けるステップと、
を含むことを特徴としている。
−ベース層内に、パワーダイのサイズに応じた少なくとも1つのキャビティを形成するステップと、
−1つのキャビティ内に上記又は各パワーダイを配置するステップと、
−ベース層上に、絶縁層及び導電層を積層するステップと、
−穿孔及び金属化を行うことによって、少なくとも1つのパワーダイを、導電層に対して接続するステップと、
−導電層をエッチングすることによって、レイアウトを形成するステップと、
−ベース層の両面上へと、追加的な薄い絶縁層及び追加的な厚い導電層を少なくとも一度積層するステップと、
−穿孔及び金属化を行うことによって、導電層と厚い導電層とを接続するステップと、
−ビアを形成するステップと、
を、この記載順に行うことによって準備される。
Claims (7)
- パワーモジュールの電気回路を構成するそれぞれの部品配置に応じた複数の領域へと区分されたパワーモジュールであって、
前記パワーモジュールは、少なくとも1つのパワーダイを備え、
前記少なくとも1つのパワーダイは、多層構造内に埋設され、
前記多層構造は、少なくとも2つのサブモジュールを熱伝導性かつ導電性の材料を使用して組み立てることで形成され、
各サブモジュールは、絶縁層及び導電層から形成され、
前記パワーモジュールは、
前記多層構造内に埋設された前記少なくとも1つのパワーダイに対しての電力供給をデカップリングするために前記多層構造内に埋設された少なくとも1つのキャパシタと、
前記少なくとも1つのパワーダイに対しての少なくとも1つの駆動回路であって、前記多層構造の表面上に配置された又は前記多層構造内に完全に若しくは部分的に埋設された、少なくとも1つの駆動回路と、
を更に備え、
前記多層構造のうちの、前記少なくとも1つのパワーダイを収容している部分だけが、液体冷却されたバスバーによって冷却され、
前記少なくとも1つのパワーダイに対して、前記液体冷却されたバスバーにより電力が供給され、
前記バスバーは、前記少なくとも1つのパワーダイに対して負のDC電力を供給するために使用される第1のバーと、前記少なくとも1つのパワーダイに対して正のDC電力を供給するために使用される第2のバーとで構成され、
前記少なくとも1つのパワーダイを収容している前記部分は、前記第1のバーおよび前記第2のバーの両方により冷却される
ことを特徴とする、パワーモジュール。 - 前記パワーモジュールは、前記多層構造内に埋設されたインダクタを更に備えている
ことを特徴とする、請求項1に記載のパワーモジュール。 - 前記パワーモジュールは、前記多層構造の表面上に配置された又は前記多層構造内に完全に若しくは部分的に埋設された磁性材料を、更に備えている
ことを特徴とする、請求項1又は2に記載のパワーモジュール。 - パワーモジュールの電気回路を構成するそれぞれの部品配置に応じた複数の領域へと区分されたパワーモジュールを製造する方法であって、
前記パワーモジュールは、少なくとも1つのパワーダイを備え、
前記方法は、
各サブモジュールが絶縁層及び導電層から形成された複数のサブモジュールを準備するステップと、
熱伝導性かつ導電性の材料を使用して前記サブモジュール同士を組み立てることによって、多層構造を形成するステップと、
前記多層構造内に少なくとも1つのパワーダイを埋設するステップと、
前記多層構造内に、前記少なくとも1つのパワーダイに対しての電力供給をデカップリングするための少なくとも1つのキャパシタを埋設するステップと、
前記少なくとも1つのパワーダイに対しての少なくとも1つの駆動回路を、前記多層構造の表面上に取り付けるステップ、又は、前記多層構造内に完全に若しくは部分的に埋設するステップと、
を含み、
前記多層構造のうちの、前記少なくとも1つのパワーダイを収容している部分だけが、液体冷却されたバスバーによって冷却され、
前記少なくとも1つのパワーダイに対して、前記液体冷却されたバスバーにより電力が供給され、
前記バスバーは、前記少なくとも1つのパワーダイに対して負のDC電力を供給するために使用される第1のバーと、前記少なくとも1つのパワーダイに対して正のDC電力を供給するために使用される第2のバーとで構成され、
前記少なくとも1つのパワーダイを収容している前記部分は、前記第1のバーおよび前記第2のバーの両方により冷却される
ことを特徴とする、方法。 - 各サブモジュールを、
ベース層内に、パワーダイのサイズに応じた少なくとも1つのキャビティを形成するステップと、
1つのキャビティ内に前記又は各パワーダイを配置するステップと、
前記ベース層上に、絶縁層及び導電層を積層するステップと、
穿孔及び金属化を行うことによって、前記少なくとも1つのパワーダイを、前記導電層に対して接続するステップと、
前記導電層をエッチングすることによって、レイアウトを形成するステップと、
前記ベース層の両面上へと、追加的な薄い絶縁層及び追加的な厚い導電層を少なくとも一度積層するステップと、
穿孔及び金属化を行うことによって、前記導電層と前記厚い導電層とを接続するステップと、
ビアを形成するステップと、
を、この記載順に行うことによって準備する
ことを特徴とする、請求項4に記載の方法。 - 前記サブモジュール同士を組み立てることで前記多層構造となったサブモジュール同士に形成された孔内に、前記少なくとも1つのキャパシタを配置する
ことを特徴とする、請求項5に記載の方法。 - 前記サブモジュール同士を組み立てることで前記多層構造となったサブモジュールのうち、最上段のサブモジュールの最上層と、最下段のサブモジュールの最下層との間に、前記少なくとも1つのキャパシタを電気的に接続する
ことを特徴とする、請求項5または6に記載の方法。
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EP16171013.2A EP3249686A1 (en) | 2016-05-24 | 2016-05-24 | A power module |
EP16171013.2 | 2016-05-24 | ||
PCT/JP2017/014885 WO2017203867A1 (en) | 2016-05-24 | 2017-04-05 | Power module and method for manufacturing power module |
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JP2019504496A JP2019504496A (ja) | 2019-02-14 |
JP6742418B2 true JP6742418B2 (ja) | 2020-08-19 |
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US (1) | US11152340B2 (ja) |
EP (1) | EP3249686A1 (ja) |
JP (1) | JP6742418B2 (ja) |
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EP3555978A1 (en) * | 2016-12-19 | 2019-10-23 | ABB Schweiz AG | Multi-phase layered busbar for conducting electric energy wherein the layers are glued together, method of manufactoring the same and switchboard cabinet including such a busbar |
EP3761492B1 (en) * | 2019-07-05 | 2023-01-04 | Infineon Technologies AG | Snubber circuit and power semiconductor module with snubber circuit |
US11632860B2 (en) | 2019-10-25 | 2023-04-18 | Infineon Technologies Ag | Power electronic assembly and method of producing thereof |
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US6305463B1 (en) * | 1996-02-22 | 2001-10-23 | Silicon Graphics, Inc. | Air or liquid cooled computer module cold plate |
JP3721717B2 (ja) * | 1997-06-03 | 2005-11-30 | 株式会社明電舎 | 半導体素子の冷却構造 |
EP1148772B1 (en) * | 2000-04-19 | 2009-12-23 | Thermal Form & Function Inc. | Cold plate utilizing fin with evaporating refrigerant |
DE10108131A1 (de) * | 2001-02-21 | 2002-09-05 | Infineon Technologies Ag | Halbleiterschaltung und Schaltnetzteil |
DE10139707A1 (de) * | 2001-08-11 | 2003-02-20 | Philips Corp Intellectual Pty | Leiterplatte |
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JP5354083B2 (ja) | 2011-11-07 | 2013-11-27 | ダイキン工業株式会社 | 半導体装置 |
US9559047B2 (en) * | 2012-10-18 | 2017-01-31 | Infineon Technologies Austria Ag | Passive component as thermal capacitance and heat sink |
JP2014086535A (ja) * | 2012-10-23 | 2014-05-12 | Denso Corp | 多層基板の放熱構造およびその製造方法 |
BR112016001796A2 (pt) * | 2013-07-30 | 2017-08-01 | Harman Becker Automotive Systems Gmbh | módulo eletrônico |
US10064287B2 (en) * | 2014-11-05 | 2018-08-28 | Infineon Technologies Austria Ag | System and method of providing a semiconductor carrier and redistribution structure |
-
2016
- 2016-05-24 EP EP16171013.2A patent/EP3249686A1/en active Pending
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2017
- 2017-04-05 JP JP2018535902A patent/JP6742418B2/ja active Active
- 2017-04-05 US US16/090,734 patent/US11152340B2/en active Active
- 2017-04-05 CN CN201780027211.6A patent/CN109155298B/zh active Active
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CN109155298B (zh) | 2021-11-30 |
US20190123030A1 (en) | 2019-04-25 |
CN109155298A (zh) | 2019-01-04 |
JP2019504496A (ja) | 2019-02-14 |
WO2017203867A1 (en) | 2017-11-30 |
US11152340B2 (en) | 2021-10-19 |
EP3249686A1 (en) | 2017-11-29 |
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