JP6734787B2 - フレキシブル基板上に電子デバイスを形成する方法 - Google Patents
フレキシブル基板上に電子デバイスを形成する方法 Download PDFInfo
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- 239000012776 electronic material Substances 0.000 claims description 29
- 238000007639 printing Methods 0.000 claims description 22
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910021389 graphene Inorganic materials 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 9
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- 239000000020 Nitrocellulose Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 229920001220 nitrocellulos Polymers 0.000 claims description 5
- 239000011148 porous material Substances 0.000 claims description 5
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- 229920002799 BoPET Polymers 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
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- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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- 239000002105 nanoparticle Substances 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D67/00—Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
- B01D67/0002—Organic membrane manufacture
- B01D67/0023—Organic membrane manufacture by inducing porosity into non porous precursor membranes
- B01D67/0032—Organic membrane manufacture by inducing porosity into non porous precursor membranes by elimination of segments of the precursor, e.g. nucleation-track membranes, lithography or laser methods
- B01D67/0034—Organic membrane manufacture by inducing porosity into non porous precursor membranes by elimination of segments of the precursor, e.g. nucleation-track membranes, lithography or laser methods by micromachining techniques, e.g. using masking and etching steps, photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D69/00—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
- B01D69/02—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor characterised by their properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
- B01D71/02—Inorganic material
- B01D71/021—Carbon
- B01D71/0211—Graphene or derivates thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
- B01D71/06—Organic material
- B01D71/08—Polysaccharides
- B01D71/12—Cellulose derivatives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/189—Printed circuits structurally associated with non-printed electric components characterised by the use of a flexible or folded printed circuit
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
- H05K3/0076—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the composition of the mask
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1275—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by other printing techniques, e.g. letterpress printing, intaglio printing, lithographic printing, offset printing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0145—Polyester, e.g. polyethylene terephthalate [PET], polyethylene naphthalate [PEN]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0736—Methods for applying liquids, e.g. spraying
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Optics & Photonics (AREA)
- Printing Methods (AREA)
- Electroluminescent Light Sources (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Electrodes Of Semiconductors (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Description
− 多孔質膜上に疎水性マスクをプリントして、前記膜上に所望されるパターンに対して相補的なパターンを形成するステップと、
− 多孔質膜のプリントされていない領域(非プリント領域)を介して電子材料の水性懸濁液を濾過し、これにより、所望されるパターンを辿る前記プリントされていない領域に一部の電子材料を堆積するステップと、
− プリントされた膜面にフレキシブル基板を押し当て、多孔質膜上に堆積されパターニングされた電子材料をフレキシブル基板へ転写してその上に電子デバイスを形成するステップと、を含み、
本方法は、アセトン溶剤を用いることなく実行される。
11 開口/プリントされていない領域(非プリント領域)
12 疎水性マスク
20 電子デバイスまたは電子構造体
22 電子材料
30 フレキシブル基板
Claims (15)
- フレキシブル基板上に電子デバイスを製造する方法であって、
多孔質膜(10)上に疎水性マスク(12)をプリントして、前記多孔質膜上に所望されるパターンと相補的なパターンを形成するステップと、
前記多孔質膜の前記疎水性マスクがプリントされていない領域(11)を介して電子材料の水性懸濁液を濾過し、これにより、前記疎水性マスクがプリントされていない領域(11)に、前記所望されるパターンにパターニングされた電子材料(22)を堆積する、ステップと、
前記多孔質膜上に堆積された前記パターニングされた前記電子材料(22)をフレキシブル基板(30)へ転写してその上に電子デバイス(20)を形成するために、プリントされた前記疎水性マスク(12)と前記パターニングされた前記電子材料(22)とからなる面に対しフレキシブル基板(30)を押し当てるステップと、
を含み、
当該方法は、アセトン溶剤を用いることなく実行される、ことを特徴とする方法。 - 前記電子材料は酸化グラフェンである、請求項1に記載の方法。
- 前記多孔質膜はニトロセルロースで作られており、その孔径は、0.01μmから0.3μmの間である、請求項1又は2に記載の方法。
- 前記疎水性マスクのプリント用材料はワックスである、請求項1〜3のいずれか一項に記載の方法。
- 前記フレキシブル基板は有機物である、請求項1〜4のいずれか一項に記載の方法。
- 前記フレキシブル基板はポリエチレンテレフタレート(PET)である、請求項5に記載の方法。
- 前記転写するステップはプレスによって実行される、請求項1〜6のいずれか一項に記載の方法。
- プレス力は、500kgから700kgの間である、請求項7に記載の方法。
- 前記プレスは、前記フレキシブル基板を粘着するスタンプを介して作動する、請求項8に記載の方法。
- 前記フレキシブル基板はシートである、請求項1〜6のいずれか一項に記載の方法。
- 前記転写するステップはロールツーロール設備によって実行される、請求項10に記載の方法。
- 前記疎水性マスクをプリントするためのプリンタは、前記ロールツーロール設備に統合されている、請求項11に記載の方法。
- 前記電子デバイスは交互嵌合電極である、請求項1〜12のいずれか一項に記載の方法。
- 前記電子デバイスは透明である、請求項1〜13のいずれか一項に記載の方法。
- フレキシブル基板上にパターニングされた電極アレイを有する装置を製造する方法であって、
多孔質膜(10)上に疎水性マスク(12)をプリントして、前記多孔質膜上に電極アレイ用の所望されるパターンと相補的なパターンを形成するステップと、
前記多孔質膜の前記疎水性マスクがプリントされていない領域(11)を介して電子材料の水性懸濁液を濾過し、これにより、前記疎水性マスクがプリントされていない領域(11)に、前記所望されるパターンにパターニングされた電子材料(22)を堆積する、ステップと、
前記多孔質膜上に堆積された前記パターニングされた前記電子材料(22)をフレキシブル基板(30)へ転写してその上に電極アレイを形成するために、プリントされた前記疎水性マスク(12)と前記パターニングされた前記電子材料(22)とからなる面に対しフレキシブル基板(30)を押し当てるステップと、
を含み、
当該方法は、アセトン溶剤を用いることなく実行される、ことを特徴とする方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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EP14382240.1 | 2014-06-20 | ||
EP14382240 | 2014-06-20 | ||
PCT/EP2015/063842 WO2015193486A1 (en) | 2014-06-20 | 2015-06-19 | Method of forming an electronic device on a flexible substrate |
Publications (3)
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JP2017526165A JP2017526165A (ja) | 2017-09-07 |
JP2017526165A5 JP2017526165A5 (ja) | 2018-07-12 |
JP6734787B2 true JP6734787B2 (ja) | 2020-08-05 |
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Country Status (13)
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US (1) | US20170123310A1 (ja) |
EP (1) | EP3158397B1 (ja) |
JP (1) | JP6734787B2 (ja) |
KR (1) | KR102375841B1 (ja) |
CN (1) | CN106662805B (ja) |
AU (1) | AU2015276028A1 (ja) |
BR (1) | BR112016029321A2 (ja) |
CA (1) | CA2954435C (ja) |
DK (1) | DK3158397T3 (ja) |
ES (1) | ES2664346T3 (ja) |
IL (1) | IL249534B (ja) |
SG (1) | SG11201610437TA (ja) |
WO (1) | WO2015193486A1 (ja) |
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EP3530617A1 (en) | 2018-02-27 | 2019-08-28 | Fundacio Privada Institut Catala de Nanociencia I Nanotecnologia (ICN2) | Method of forming a porous graphene-based macroscopic structure |
KR102130323B1 (ko) * | 2018-06-04 | 2020-07-06 | 한국화학연구원 | 기능성 물질을 이용한 패턴 필름의 제조방법 및 기능성 물질을 이용한 패턴 필름의 전사방법 |
JP7190129B2 (ja) * | 2018-10-01 | 2022-12-15 | ヒューグルエレクトロニクス株式会社 | イオン分布可視化装置及びイオン分布可視化システム |
EP3772086A1 (en) | 2019-08-01 | 2021-02-03 | Fundació Institut Català de Nanociència i Nanotecnologia (ICN2) | Method to form a laser-scribed rgo pattern on a substrate |
CN110972411B (zh) * | 2019-10-22 | 2022-12-06 | 深圳丹邦科技股份有限公司 | 基于量子碳基膜的柔性线路板基材及其制备方法 |
CN110658677B (zh) * | 2019-11-12 | 2021-08-13 | 京东方科技集团股份有限公司 | 一种压印方法、压印结构及显示基板 |
CN111554756B (zh) * | 2020-05-15 | 2022-04-15 | 京东方科技集团股份有限公司 | 光电探测器、显示基板 |
US20230127465A1 (en) * | 2021-10-26 | 2023-04-27 | Ford Global Technologies, Llc | System and method for approaching vehicle detection |
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JPH11174017A (ja) * | 1997-12-08 | 1999-07-02 | Akebono Brake Res & Dev Center Ltd | 微生物電極及び微生物センサ |
JP2003262635A (ja) * | 2002-03-08 | 2003-09-19 | Nitto Denko Corp | 吸水性基材を用いた、生物学的親和性に基づく物質の測定方法およびそのためのキット |
AU2003249324A1 (en) * | 2002-07-19 | 2004-02-09 | University Of Florida | Transparent electrodes from single wall carbon nanotubes |
KR100719547B1 (ko) * | 2005-03-24 | 2007-05-17 | 삼성에스디아이 주식회사 | 유기박막 패터닝방법, 이를 이용한 유기박막 트랜지스터 및그의 제조방법과 유기 박막 트랜지스터를 구비한평판표시장치 |
JP2009509358A (ja) * | 2005-09-21 | 2009-03-05 | ユニバーシティ オブ フロリダ リサーチ ファンデーション インコーポレーティッド | パターン化導電性薄膜を形成するための低温法およびそれに由来するパターン化物品 |
US8540922B2 (en) * | 2007-08-27 | 2013-09-24 | Hewlett-Packard Development Company, L.P. | Laser patterning of a carbon nanotube layer |
US8847313B2 (en) * | 2008-11-24 | 2014-09-30 | University Of Southern California | Transparent electronics based on transfer printed carbon nanotubes on rigid and flexible substrates |
KR101502172B1 (ko) * | 2008-12-12 | 2015-03-13 | 엘지디스플레이 주식회사 | 플렉서블 표시장치의 제조 방법 |
CN102452239A (zh) * | 2010-10-22 | 2012-05-16 | 韩国科学技术院 | 图案转印方法和图案转印装置以及利用该方法制造的产品 |
JP2013058599A (ja) * | 2011-09-08 | 2013-03-28 | Sumitomo Chemical Co Ltd | 有機半導体素子用電極及びその製造方法 |
LT5943B (lt) * | 2011-10-20 | 2013-06-25 | Vilniaus Universitetas | Plono elektrai laidaus permatomo grafeno sluoksnio gamybos būdas |
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Publication number | Publication date |
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KR102375841B1 (ko) | 2022-03-17 |
JP2017526165A (ja) | 2017-09-07 |
EP3158397B1 (en) | 2018-01-03 |
US20170123310A1 (en) | 2017-05-04 |
BR112016029321A2 (pt) | 2017-08-22 |
CA2954435A1 (en) | 2015-12-23 |
KR20170023959A (ko) | 2017-03-06 |
AU2015276028A1 (en) | 2017-02-02 |
EP3158397A1 (en) | 2017-04-26 |
IL249534A0 (en) | 2017-02-28 |
DK3158397T3 (en) | 2018-04-16 |
CN106662805A (zh) | 2017-05-10 |
CA2954435C (en) | 2023-02-14 |
SG11201610437TA (en) | 2017-01-27 |
ES2664346T3 (es) | 2018-04-19 |
IL249534B (en) | 2021-12-01 |
CN106662805B (zh) | 2020-07-28 |
WO2015193486A1 (en) | 2015-12-23 |
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