JP6726890B2 - 太陽電池の製造方法、及び太陽電池 - Google Patents
太陽電池の製造方法、及び太陽電池 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims description 165
- 239000013078 crystal Substances 0.000 claims description 159
- 239000004065 semiconductor Substances 0.000 claims description 154
- 238000009751 slip forming Methods 0.000 claims 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 48
- 238000000034 method Methods 0.000 description 30
- 230000015572 biosynthetic process Effects 0.000 description 19
- 239000000969 carrier Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
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- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
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- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
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- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Description
Claims (4)
- 一導電型を有する結晶基板を準備する工程と、
一導電型を有する第1半導体層を、前記結晶基板の一主面上と前記結晶基板の側面上に連続して形成する工程と、
他導電型を有する第2半導体層を、前記結晶基板の他主面上と前記結晶基板の側面上に連続して形成する工程と、
第1透明導電膜を、前記結晶基板の一主面上および該一主面上から回り込んで前記結晶基板の側面上に形成する工程と、
第2透明導電膜を、枠状マスクの開口部を通して形成することによって、前記第2半導体層上であって、前記結晶基板の他主面上に前記結晶基板の平面形状よりも小さい面積を有するように形成する工程と、を備える太陽電池の製造方法。 - 一導電型を有する結晶基板を準備する工程と、
一導電型を有する第1半導体層を、前記結晶基板の一主面上と前記結晶基板の側面上に連続して形成する工程と、
他導電型を有する第2半導体層を、前記結晶基板の他主面上と前記結晶基板の側面上に連続して形成する工程と、
第1透明導電膜を、前記第1半導体層上であって、前記結晶基板の一主面の全面上に形成する工程と、
第2透明導電膜を、枠状マスクの開口部を通して形成することによって、前記第2半導体層上であって、前記結晶基板の他主面上に前記結晶基板の平面形状よりも小さい面積を有するように形成する工程と、を備える太陽電池の製造方法。 - 一導電型を有する結晶基板と、
前記結晶基板の受光面上と前記結晶基板の側面上に連続して形成され、一導電型を有する第1半導体層と、
前記結晶基板の裏面上と前記結晶基板の側面上に連続して形成され、他導電型を有する第2半導体層と、
前記第1半導体層上であって、前記結晶基板の一主面上および該一主面から回り込んで前記結晶基板の側面上に形成される第1透明導電膜と、
前記第2半導体層上に形成される第2透明導電膜と、を備え、
前記第1透明導電膜は、前記結晶基板の側面上において、前記結晶基板の受光面から裏面にまで回り込まず、
前記第2透明導電膜は、前記結晶基板の平面形状より小さい面積を有する、太陽電池。 - 一導電型を有する結晶基板と、
前記結晶基板の受光面上と前記結晶基板の側面上に連続して形成され、一導電型を有する第1半導体層と、
前記結晶基板の裏面上と前記結晶基板の側面上に連続して形成され、他導電型を有する第2半導体層と、
前記第1半導体層上であって、前記結晶基板の一主面の全面上に形成される第1透明導電膜と、
前記第2半導体層上に形成される第2透明導電膜と、を備え、
前記第1透明導電膜は、前記結晶基板の側面上において、前記結晶基板の受光面から裏面にまで回り込まず、
前記第2透明導電膜は、前記結晶基板の平面形状より小さい面積を有する、太陽電池。
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JP3349308B2 (ja) * | 1995-10-26 | 2002-11-25 | 三洋電機株式会社 | 光起電力素子 |
JP3679598B2 (ja) * | 1998-03-05 | 2005-08-03 | 三洋電機株式会社 | 光起電力素子及びその製造方法 |
JP3825585B2 (ja) | 1999-07-26 | 2006-09-27 | 三洋電機株式会社 | 光起電力素子の製造方法 |
JP4854387B2 (ja) * | 2006-05-29 | 2012-01-18 | 三洋電機株式会社 | 光起電力素子 |
JP2009088203A (ja) * | 2007-09-28 | 2009-04-23 | Sanyo Electric Co Ltd | 太陽電池、太陽電池モジュール及び太陽電池の製造方法 |
JP2011046990A (ja) * | 2009-08-26 | 2011-03-10 | Canon Anelva Corp | 電圧印加装置及び基板処理装置 |
JP5421701B2 (ja) * | 2009-09-09 | 2014-02-19 | 株式会社カネカ | 結晶シリコン太陽電池及びその製造方法 |
KR101199210B1 (ko) | 2010-10-28 | 2012-11-07 | 한국에너지기술연구원 | 태양전지 박막 증착장치, 방법, 시스템 |
JP2011023759A (ja) * | 2010-11-02 | 2011-02-03 | Sanyo Electric Co Ltd | 光起電力素子の製造方法 |
EP2450970A1 (en) * | 2010-11-05 | 2012-05-09 | Roth & Rau AG | Edge isolation by lift-off |
EP2765615B1 (en) * | 2012-04-25 | 2018-05-23 | Kaneka Corporation | Solar cell, solar cell manufacturing method, and solar cell module |
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WO2015068340A1 (ja) | 2015-05-14 |
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US20160247954A1 (en) | 2016-08-25 |
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