JP6408616B2 - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
- Publication number
- JP6408616B2 JP6408616B2 JP2017007492A JP2017007492A JP6408616B2 JP 6408616 B2 JP6408616 B2 JP 6408616B2 JP 2017007492 A JP2017007492 A JP 2017007492A JP 2017007492 A JP2017007492 A JP 2017007492A JP 6408616 B2 JP6408616 B2 JP 6408616B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- solar cell
- transparent conductive
- conductive film
- doping layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 157
- 239000004065 semiconductor Substances 0.000 claims description 136
- 238000002161 passivation Methods 0.000 claims description 58
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 21
- 239000012535 impurity Substances 0.000 claims description 18
- 238000009751 slip forming Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
- B29C64/20—Apparatus for additive manufacturing; Details thereof or accessories therefor
- B29C64/205—Means for applying layers
- B29C64/209—Heads; Nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
- B29C64/10—Processes of additive manufacturing
- B29C64/106—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y40/00—Auxiliary operations or equipment, e.g. for material handling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S20/00—Supporting structures for PV modules
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S30/00—Structural details of PV modules other than those related to light conversion
- H02S30/20—Collapsible or foldable PV modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Photovoltaic Devices (AREA)
- Crystallography & Structural Chemistry (AREA)
Description
Claims (24)
- 第1導電型の結晶質半導体基板と、
前記半導体基板の前面(front surface)及び側面(side surface)に位置し、前記半導体基板と異種接合を形成する前面ドーピング層と、
前記半導体基板の後面(back surface)及び側面(side surface)に位置し、前記半導体基板と異種接合を形成する後面ドーピング層と、
前記前面ドーピング層の上に位置する前面透明導電膜と、
前記後面ドーピング層の下に位置する後面透明導電膜と
を含み、
前記前面ドーピング層と、前記後面ドーピング層の中のいずれか1つは、前記半導体基板とp−n接合を形成するように前記第1導電型の反対の第2導電型で形成され、前記前面ドーピング層と、前記後面ドーピング層の内、他の一つは、前記第1導電型で形成され、
前記前面透明導電膜の表面積は、前記後面透明導電膜の表面積より広く形成され、
前記半導体基板の側面から前記前面透明導電膜は前記後面ドーピング層をカバーし、
前記前面透明導電膜の第1方向の幅は、前記半導体基板の第1方向の幅と、同一に形成されるか、前記半導体基板の第1方向の幅より大きく形成され、
前記半導体基板の前記前面の端の領域の内、少なくとも一部の領域には、前記前面透明導電膜が形成されない、太陽電池。 - 前記前面透明導電膜が形成されない領域は、前記半導体基板の前記前面の端の領域の内、一部の領域に局部的に位置する、請求項1に記載の太陽電池。
- 前記前面透明導電膜が形成されない領域は、互いに離隔した複数本からなる、請求項2に記載の太陽電池。
- 前記後面透明導電膜の第1方向の幅と第2方向の幅は、前記半導体基板の第1方向の幅と第2方向の幅よりそれぞれ小さく形成される、請求項1に記載の太陽電池。
- 前記半導体基板の前記後面の端の領域には、前記後面の透明導電膜が形成されない、請求項4に記載の太陽電池。
- 前記後面透明導電膜が形成されない領域は、前記半導体基板の端に沿って連続的に形成される、請求項5に記載の太陽電池。
- 前記半導体基板の前記前面及び前記後面は前記半導体基板の端(edge)から前記半導体基板の内側に前記端に沿って連続的に形成された端領域と、前記端の領域を除外した残りの領域である中心領域をそれぞれ含み、
前記前面透明導電膜は、前記前面の端の領域と中心領域に完全に(entirely)形成されるか、前記前面の端の領域の内、一部に不連続に形成された未形成部を除外した残りの前記端領域及び前記中心領域に形成され、
前記後面透明導電膜は、前記後面の端の領域を除外した前記中心領域のみに形成される、請求項1に記載の太陽電池。 - 前記半導体基板の前記後面の端の領域は、0.5mm乃至1.5mmの幅で形成される、請求項7に記載の太陽電池。
- 前記半導体基板の前記後面の端の領域は、0.5mm乃至1.0mmの幅で形成される、請求項7に記載の太陽電池。
- 前記半導体基板の前記前面及び前記後面の内、少なくとも一つは、複数の微細凹凸を含むテクスチャリング表面に形成される、請求項7に記載の太陽電池。
- 前記半導体基板は、n型不純物を含み、前記前面ドーピング層は、p型不純物を含有したp型非晶質シリコン(p−a−Si)で形成され、前記後面ドーピング層は、n型不純物を含有したn型非晶質シリコン(n−a−Si)で形成される、請求項7に記載の太陽電池。
- 前記前面透明導電膜の上に位置する前面集電極と前記後面透明導電膜の下に位置する後面集電極をさらに含む、請求項7に記載の太陽電池。
- 前記前面集電極は、前記前面ドーピング層と物理的に直接接触せず、前記後面集電極は、前記後面ドーピング層と物理的に直接接触しない、請求項12に記載の太陽電池。
- 前記前面集電極は、第1方向に延長された複数の第1フィンガー電極と、前記第1方向と直交する第2方向に延長され、複数の第1フィンガー電極と物理的に接続される少なくとも一つの第1バスバー電極を含み、前記後面集電極は、前記第1方向に延長された複数の第2フィンガー電極と前記第2方向に延長され、複数の第2フィンガー電極と物理的に接続される少なくとも一つの第2バスバー電極を含むか、前記後面透明導電膜の後面を全体的に覆う面電極(sheet electrode)を含む、請求項13に記載の太陽電池。
- 前記未形成部は、少なくとも一つの前記第1バスバー電極の両側端部側にそれぞれ位置する、請求項14に記載の太陽電池。
- 前記第1バスバー電極の両側端部の第1方向の幅は、前記第2方向に沿って、前記両方の端部の間に位置する残りの部分の第1方向の幅より大きく形成される、請求項15に記載の太陽電池。
- 前記少なくとも一つの第1バスバー電極の両側端部は、それぞれ前記第1方向に沿って、前記未形成部の両側に分割され、分割された部分との間には、前記未形成部が位置する、請求項16に記載の太陽電池。
- 前記未形成部を除外した前記端の領域の前記前面透明導電膜の上にも前記第1フィンガー電極が位置し、前記分割された第1バスバー電極の両側端部は、前記端の領域に延長されて前記第1フィンガー電極に物理的に接続される、請求項16に記載の太陽電池。
- 前記未形成部の第1方向の幅は、少なくとも一つの前記第1バスバー電極の前記残りの部分の第1方向の幅以下に形成される、請求項16に記載の太陽電池。
- 前記未形成部の第2方向の長さは、前記第2方向に隣接した2つのフィンガー電極間の間隔より小さく形成される、請求項16に記載の太陽電池。
- 前記前面ドーピング層と前記半導体基板との間に位置する前面パッシベーション層と、前記後面ドーピング層と前記半導体基板との間に位置する後面パッシベーション層とをさらに含む、請求項14に記載の太陽電池。
- 前記前面パッシベーション層と、前記後面パッシベーション層は、真性非晶質シリコン(i−a−Si)またはトンネル酸化膜(tunnel oxide)で形成される、請求項21に記載の太陽電池。
- 前記前面パッシベーション層と、前記後面パッシベーション層の内、少なくとも一つは、前記半導体基板の側面上に、さらに位置する、請求項21に記載の太陽電池。
- 前記前面パッシベーション層、前記後面パッシベーション層、前記前面ドーピング層と、前記後面ドーピング層は、前記半導体基板の側面から互いに重畳する、請求項23に記載の太陽電池。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2016-0006863 | 2016-01-20 | ||
KR1020160006863A KR101778128B1 (ko) | 2016-01-20 | 2016-01-20 | 태양전지 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017130664A JP2017130664A (ja) | 2017-07-27 |
JP6408616B2 true JP6408616B2 (ja) | 2018-10-17 |
Family
ID=57850981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017007492A Expired - Fee Related JP6408616B2 (ja) | 2016-01-20 | 2017-01-19 | 太陽電池 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20170207351A1 (ja) |
EP (2) | EP3544059A1 (ja) |
JP (1) | JP6408616B2 (ja) |
KR (1) | KR101778128B1 (ja) |
CN (1) | CN106997906B (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102541127B1 (ko) * | 2017-09-05 | 2023-06-09 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 텐덤 태양전지 및 그 제조 방법 |
USD839180S1 (en) * | 2017-10-31 | 2019-01-29 | Flex Ltd. | Busbar-less solar cell |
US20200381577A1 (en) * | 2018-01-18 | 2020-12-03 | The Solaria Corporation | Method of manufacturing shingled solar modules |
WO2020145568A1 (ko) * | 2019-01-09 | 2020-07-16 | 엘지전자 주식회사 | 태양전지 제조 방법 |
WO2020152951A1 (ja) * | 2019-01-24 | 2020-07-30 | 株式会社カネカ | 太陽電池製造用の基板トレイ及び太陽電池の製造方法 |
DE102019123785A1 (de) | 2019-09-05 | 2021-03-11 | Meyer Burger (Germany) Gmbh | Rückseitenemitter-Solarzellenstruktur mit einem Heteroübergang sowie Verfahren und Vorrichtung zur Herstellung derselben |
DE102019123758A1 (de) | 2019-09-05 | 2021-03-11 | Schaeffler Technologies AG & Co. KG | Wellgetriebe zur variablen Ventilsteuerung einer Brennkraftmaschine |
CN114975683B (zh) * | 2020-09-30 | 2023-06-06 | 浙江晶科能源有限公司 | 一种太阳能电池及其制备方法 |
FR3131083A1 (fr) * | 2021-12-16 | 2023-06-23 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Cellule photovoltaïque a contacts passives et a revêtement antireflet |
CN117712199A (zh) | 2022-09-08 | 2024-03-15 | 浙江晶科能源有限公司 | 太阳能电池及光伏组件 |
CN117238987A (zh) | 2022-09-08 | 2023-12-15 | 浙江晶科能源有限公司 | 太阳能电池及光伏组件 |
KR102638070B1 (ko) * | 2023-02-16 | 2024-02-20 | 한국화학연구원 | 반사방지 및 도핑효과가 있는 광학박막의 제조방법 및 이에 의해 제조된 광학박막 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4831565A (en) | 1986-10-03 | 1989-05-16 | Canadian Corporate Management Company Limited | Process control equipment for adverse environments |
JP3349308B2 (ja) * | 1995-10-26 | 2002-11-25 | 三洋電機株式会社 | 光起電力素子 |
JP3825585B2 (ja) * | 1999-07-26 | 2006-09-27 | 三洋電機株式会社 | 光起電力素子の製造方法 |
JP4194379B2 (ja) * | 2003-01-22 | 2008-12-10 | 三洋電機株式会社 | 光起電力装置 |
JP4222991B2 (ja) * | 2004-01-13 | 2009-02-12 | 三洋電機株式会社 | 光起電力装置 |
ES2385720T3 (es) * | 2005-02-25 | 2012-07-30 | Sanyo Electric Co., Ltd. | Célula fotovoltaica |
JP4502845B2 (ja) * | 2005-02-25 | 2010-07-14 | 三洋電機株式会社 | 光起電力素子 |
JP4040659B2 (ja) * | 2006-04-14 | 2008-01-30 | シャープ株式会社 | 太陽電池、太陽電池ストリング、および太陽電池モジュール |
JP2009088203A (ja) * | 2007-09-28 | 2009-04-23 | Sanyo Electric Co Ltd | 太陽電池、太陽電池モジュール及び太陽電池の製造方法 |
JP5147672B2 (ja) * | 2008-01-31 | 2013-02-20 | 三洋電機株式会社 | 太陽電池モジュール及び太陽電池モジュールの製造方法 |
KR101699300B1 (ko) * | 2010-09-27 | 2017-01-24 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
JP5496856B2 (ja) * | 2010-11-02 | 2014-05-21 | 三洋電機株式会社 | 光起電力素子の製造方法 |
EP2450970A1 (en) | 2010-11-05 | 2012-05-09 | Roth & Rau AG | Edge isolation by lift-off |
EP2657978A4 (en) * | 2011-01-31 | 2014-03-19 | Sanyo Electric Co | PHOTOELECTRIC CONVERTER AND METHOD FOR THE PRODUCTION THEREOF |
KR20120104846A (ko) * | 2011-03-14 | 2012-09-24 | 주성엔지니어링(주) | 태양전지 및 그 제조방법 |
DE102011006833A1 (de) | 2011-04-06 | 2012-10-11 | Roth & Rau Ag | Substratträger |
ES2873473T5 (es) | 2012-07-02 | 2024-06-07 | Meyer Burger Germany Gmbh | Procedimientos de fabricación de células solares de heterounión con aislamiento de bordes |
US20150214398A1 (en) * | 2012-08-29 | 2015-07-30 | Mitsubishi Electric Corporation | Photovoltaic element and manufacturing method thereof |
-
2016
- 2016-01-20 KR KR1020160006863A patent/KR101778128B1/ko active IP Right Grant
-
2017
- 2017-01-13 CN CN201710024078.0A patent/CN106997906B/zh active Active
- 2017-01-18 US US15/408,903 patent/US20170207351A1/en not_active Abandoned
- 2017-01-19 EP EP19173752.7A patent/EP3544059A1/en not_active Withdrawn
- 2017-01-19 EP EP17152171.9A patent/EP3196945B1/en active Active
- 2017-01-19 JP JP2017007492A patent/JP6408616B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20170087179A (ko) | 2017-07-28 |
CN106997906A (zh) | 2017-08-01 |
EP3544059A1 (en) | 2019-09-25 |
CN106997906B (zh) | 2019-08-06 |
JP2017130664A (ja) | 2017-07-27 |
KR101778128B1 (ko) | 2017-09-13 |
EP3196945A1 (en) | 2017-07-26 |
EP3196945B1 (en) | 2019-06-19 |
US20170207351A1 (en) | 2017-07-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6408616B2 (ja) | 太陽電池 | |
US11056598B2 (en) | Solar cell | |
US9508875B2 (en) | Solar cell and method for manufacturing the same | |
US10680122B2 (en) | Solar cell and method for manufacturing the same | |
JP2019041131A (ja) | 太陽電池 | |
EP1696492A1 (en) | Photovoltaic cell | |
EP2341548B1 (en) | Solar cell module | |
JP2015029126A (ja) | 太陽電池及びその製造方法 | |
US20160197204A1 (en) | Solar cell and method for manufacturing the same | |
JP5755372B2 (ja) | 光発電装置 | |
JP5869674B2 (ja) | 光発電素子 | |
JP2024040441A (ja) | 太陽光電池及び太陽光発電モジュール | |
US8889981B2 (en) | Photoelectric device | |
EP2903037B1 (en) | Fabrication method for back-contact heterojunction solar cell | |
JP5501549B2 (ja) | 光電変換素子、およびそれから構成される光電変換モジュール |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20171128 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20171129 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180219 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20180417 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180718 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20180731 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180821 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180920 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6408616 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |