JP2018085509A - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- JP2018085509A JP2018085509A JP2017224351A JP2017224351A JP2018085509A JP 2018085509 A JP2018085509 A JP 2018085509A JP 2017224351 A JP2017224351 A JP 2017224351A JP 2017224351 A JP2017224351 A JP 2017224351A JP 2018085509 A JP2018085509 A JP 2018085509A
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- semiconductor substrate
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 62
- 239000004065 semiconductor Substances 0.000 claims abstract description 202
- 239000000758 substrate Substances 0.000 claims abstract description 167
- 238000002161 passivation Methods 0.000 claims abstract description 76
- 238000000034 method Methods 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 39
- 239000013078 crystal Substances 0.000 claims description 20
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 239000012535 impurity Substances 0.000 abstract description 12
- 238000005520 cutting process Methods 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 3
- 230000006866 deterioration Effects 0.000 abstract description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 17
- 239000002019 doping agent Substances 0.000 description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910004012 SiCx Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- ATFCOADKYSRZES-UHFFFAOYSA-N indium;oxotungsten Chemical compound [In].[W]=O ATFCOADKYSRZES-UHFFFAOYSA-N 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 3
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- JUGMVQZJYQVQJS-UHFFFAOYSA-N [B+3].[O-2].[Zn+2] Chemical compound [B+3].[O-2].[Zn+2] JUGMVQZJYQVQJS-UHFFFAOYSA-N 0.000 description 2
- CJNDGEMSSGQZAN-UHFFFAOYSA-N [O--].[O--].[In+3].[Cs+] Chemical compound [O--].[O--].[In+3].[Cs+] CJNDGEMSSGQZAN-UHFFFAOYSA-N 0.000 description 2
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910003449 rhenium oxide Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229910002785 ReO3 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910003070 TaOx Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- YSZJKUDBYALHQE-UHFFFAOYSA-N rhenium trioxide Chemical compound O=[Re](=O)=O YSZJKUDBYALHQE-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/048—Encapsulation of modules
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
- H01L31/03685—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table including microcrystalline silicon, uc-Si
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
- H01L31/1824—Special manufacturing methods for microcrystalline Si, uc-Si
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
【解決手段】エッジ領域EA1とエッジ領域EA2の間に配置されたセル領域CAを含み、第1面及び前記第1面と対向する第2面を含む半導体基板10の前記第1面のセル領域に配置された第1パッシベーション膜52、第1パッシベーション膜52上に配置された第1導電型半導体層20および第1導電型半導体層20上に配置された第1電極42を含み、半導体基板10の前記第1面のエッジ領域EA1とエッジ領域EA2は露出している。
【選択図】図1
Description
〔本発明の一態様〕
〔1〕 太陽電池であって、
第1エッジ領域、第2エッジ領域、並びに前記第1エッジ領域と前記第2エッジ領域との間に配置されたセル領域をそれぞれ含んだ、第1面及び前記第1面と対向する第2面を備えた半導体基板と、
前記半導体基板の前記第1面のセル領域に配置された第1パッシベーション膜と、
前記第1パッシベーション膜上に配置された第1導電型半導体層と、
前記第1導電型半導体層上に配置された第1電極とを備えてなるものであり、
前記半導体基板の前記第1面の第1エッジ領域は露出してなり、
露出した前記第1面のエッジ領域において、前記半導体基板は深さ方向に沿って均一なドーピング濃度を有するものである、太陽電池。
〔2〕 前記第1面における前記第2エッジ領域は露出してなるものである、〔1〕に記載の太陽電池。
〔3〕 前記第2面における前記第1及エッジ領域及び前記第2エッジ領域は露出していないものである、〔1〕又は〔2〕に記載の太陽電池。
〔4〕 前記第1面における前記第1エッジ領域と前記第2面における前記第1エッジ領域とは互いに異なる結晶構造を含んでなるものである(好ましくは、前記半導体基板の前記第1面における前記第1エッジ領域が第1結晶構造を含んでなり、及び、前記半導体基板の前記第2面における前記第2エッジ領域が第2結晶構造を含んでなり、前記第1結晶構造と前記第2結晶構造とが異なる結晶構造である)、〔1〕〜〔3〕の何れか一項に記載の太陽電池。
〔5〕 太陽電池の製造方法であって、
複数個のセル部分と、前記複数個のセル部分の間に配置されるスクライビング部分とを含んだ半導体基板上に、前記スクライビング部分にマスクを配置し、
前記半導体基板及び前記マスクの上に、第1導電型領域を形成し、
前記第1導電型領域上に、前記導電型領域と電気的に接続される第1電極を形成し、
前記マスクを除去して、前記マスク上に配置された前記第1導電型領域の一部を除去し、
前記スクライビング部分に沿って前記半導体基板を分割することを含んでなる、太陽電池の製造方法。
〔6〕 前記マスクを除去することが、前記スクライビング部分を介して前記半導体基板を露出させることを含んでなる、〔5〕に記載の太陽電池の製造方法。
〔7〕 前記半導体基板を分割することが、前記スクライビング部分を介して露出した前記半導体基板にレーザーを照射して前記半導体基板を分割することを含んでなる、〔5〕又は〔6〕に記載の太陽電池の製造方法。
〔8〕 前記第1電極を形成することが、
第1透明電極層を形成し、及び
前記第1透明電極層上に形成される第1金属電極層を形成することを含んでなり、
前記第1金属電極層を形成することが、前記半導体基板のスクライビング部分に前記第1金属電極層を形成せず、前記セル部分に前記第1金属電極層を形成することを含んでなる、〔5〕〜〔7〕の何れか一項に記載の太陽電池の製造方法。
〔9〕 前記マスクを配置する前に、前記半導体基板上に第1パッシベーション膜を形成することを更に含んでなり、
前記マスクを除去することが、前記マスクを除去して、前記スクライビング部分に配置された前記第1パッシベーション膜の一部を露出させることを含んでなる、〔5〕〜〔8〕の何れか一項に記載の太陽電池の製造方法。
〔10〕 前記半導体基板を分割することが、前記スクライビング部分を介して露出した前記第1パッシベーション膜の一部にレーザーを照射して前記半導体基板を分割することを含んでなる、〔9〕に記載の太陽電池の製造方法。
〔11〕 前記半導体基板の前記第2面の第1エッジ領域及び第2エッジ領域とセル領域の上に配置された第2パッシベーション膜、
前記第2パッシベーション膜上に配置され、前記第1導電型半導体層と異なる導電型を有する第2導電型半導体層、及び
前記第2導電型半導体層上に配置された第2電極をさらに備えてなる、〔1〕〜〔4〕の何れか一項に記載の太陽電池。
〔12〕 前記第2導電型半導体層は、前記半導体基板とPN接合を形成するエミッタ層である、〔11〕に記載の太陽電池。
〔13〕 前記第1面の第1エッジ領域はレーザー損傷領域を含んでなる、〔1〕〜〔4〕、〔11〕、〔12〕の何れか一項に記載の太陽電池。
〔14〕 前記第1パッシベーション膜は、前記第1エッジ領域の前記露出した第1面上に延び、前記露出した第1面を覆うものである、〔1〕〜〔4〕、〔11〕〜〔13〕の何れか一項に記載の太陽電池。
〔15〕 前記第1エッジ領域と前記第2エッジ領域は、平面視で、互いに連結されてなるものである、〔1〕〜〔4〕、〔11〕〜〔14〕の何れか一項に記載の太陽電池。
〔16〕 前記半導体基板は、前記半導体基板上に配置されて、前記半導体基板の側面と隣接するエッジ領域をさらに含んでなり、
前記マスクを配置することが、前記エッジ領域上に前記マスクを配置することを含んでなる、〔5〕〜〔15〕の何れか一項に記載の太陽電池の製造方法。
〔17〕 前記半導体基板を分割した後に、
前記スクライビング部分を介して露出した前記半導体基板は、深さ方向に沿って均一なドーピング濃度を有するものである、〔5〕〜〔16〕の何れか一項に記載の太陽電池の製造方法。
〔18〕 前記半導体基板と前記第1導電型領域とは同じ導電型を有する、〔5〕〜〔17〕の何れか一項に記載の太陽電池の製造方法。
〔19〕 前記第1パッシベーション膜は真性半導体層を備えてなる、〔5〕〜〔18〕の何れか一項に記載の太陽電池の製造方法。
〔20〕 前記半導体基板を分割することが、分割後の半導体基板が同一の面積を有するように前記半導体基板を分割することを含んでなる、〔5〕〜〔19〕の何れか一項に記載の太陽電池の製造方法。
図24は、本発明のいくつかの実施例に係る太陽電池を示した断面図である。
一方、本発明において、半導体基板110の第1面の第1及び第2エッジ領域EA1,EA2において、ドーピング濃度は深さ方向に沿って一定であり得る。これは、本発明の製造方法から導出される構造的特徴であり、より詳細な説明は、後述する製造方法の説明を通じて説明する。
Claims (10)
- 太陽電池であって、
第1エッジ領域、第2エッジ領域、並びに前記第1エッジ領域と前記第2エッジ領域との間に配置されたセル領域をそれぞれ含んだ、第1面及び前記第1面と対向する第2面を備えた半導体基板と、
前記半導体基板の前記第1面のセル領域に配置された第1パッシベーション膜と、
前記第1パッシベーション膜上に配置された第1導電型半導体層と、
前記第1導電型半導体層上に配置された第1電極とを備えてなるものであり、
前記半導体基板の前記第1面の第1エッジ領域は露出してなり、
露出した前記第1面のエッジ領域において、前記半導体基板は深さ方向に沿って均一なドーピング濃度を有するものである、太陽電池。 - 前記第1面における前記第2エッジ領域は露出してなるものである、請求項1に記載の太陽電池。
- 前記第2面における前記第1及エッジ領域及び前記第2エッジ領域は露出していないものである、請求項1又は2に記載の太陽電池。
- 前記第1面における前記第1エッジ領域と前記第2面における前記第1エッジ領域とは互いに異なる結晶構造を含んでなるものである、請求項1〜3の何れか一項に記載の太陽電池。
- 太陽電池の製造方法であって、
複数個のセル部分と、前記複数個のセル部分の間に配置されるスクライビング部分とを含んだ半導体基板上に、前記スクライビング部分にマスクを配置し、
前記半導体基板及び前記マスクの上に、第1導電型領域を形成し、
前記第1導電型領域上に、前記導電型領域と電気的に接続される第1電極を形成し、
前記マスクを除去して、前記マスク上に配置された前記第1導電型領域の一部を除去し、
前記スクライビング部分に沿って前記半導体基板を分割することを含んでなる、太陽電池の製造方法。 - 前記マスクを除去することが、前記スクライビング部分を介して前記半導体基板を露出させることを含んでなる、請求項5に記載の太陽電池の製造方法。
- 前記半導体基板を分割することが、前記スクライビング部分を介して露出した前記半導体基板にレーザーを照射して前記半導体基板を分割することを含んでなる、請求項5又は6に記載の太陽電池の製造方法。
- 前記第1電極を形成することが、
第1透明電極層を形成し、及び
前記第1透明電極層上に形成される第1金属電極層を形成することを含んでなり、
前記第1金属電極層を形成することが、前記半導体基板のスクライビング部分に前記第1金属電極層を形成せず、前記セル部分に前記第1金属電極層を形成することを含んでなる、請求項5〜7の何れか一項に記載の太陽電池の製造方法。 - 前記マスクを配置する前に、前記半導体基板上に第1パッシベーション膜を形成することを更に含んでなり、
前記マスクを除去することが、前記マスクを除去して、前記スクライビング部分に配置された前記第1パッシベーション膜の一部を露出させることを含んでなる、請求項5〜8の何れか一項に記載の太陽電池の製造方法。 - 前記半導体基板を分割することが、前記スクライビング部分を介して露出した前記第1パッシベーション膜の一部にレーザーを照射して前記半導体基板を分割することを含んでなる、請求項9に記載の太陽電池の製造方法。
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KR101942783B1 (ko) | 2019-04-17 |
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US20180145196A1 (en) | 2018-05-24 |
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EP3327793C0 (en) | 2023-06-07 |
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