JP6712482B2 - 基板処理方法および基板処理装置 - Google Patents

基板処理方法および基板処理装置 Download PDF

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Publication number
JP6712482B2
JP6712482B2 JP2016070403A JP2016070403A JP6712482B2 JP 6712482 B2 JP6712482 B2 JP 6712482B2 JP 2016070403 A JP2016070403 A JP 2016070403A JP 2016070403 A JP2016070403 A JP 2016070403A JP 6712482 B2 JP6712482 B2 JP 6712482B2
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Japan
Prior art keywords
substrate
filler
solvent
substrate processing
processing method
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JP2016070403A
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English (en)
Japanese (ja)
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JP2017183576A (ja
Inventor
泰範 金松
泰範 金松
仁司 中井
仁司 中井
岩田　智巳
智巳 岩田
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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Filing date
Publication date
Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd
Priority to JP2016070403A priority Critical patent/JP6712482B2/ja
Priority to PCT/JP2017/002403 priority patent/WO2017169019A1/ja
Priority to CN201780013898.8A priority patent/CN108701605B/zh
Priority to KR1020187024342A priority patent/KR102110065B1/ko
Priority to TW106104898A priority patent/TWI637434B/zh
Publication of JP2017183576A publication Critical patent/JP2017183576A/ja
Application granted granted Critical
Publication of JP6712482B2 publication Critical patent/JP6712482B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
JP2016070403A 2016-03-31 2016-03-31 基板処理方法および基板処理装置 Active JP6712482B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2016070403A JP6712482B2 (ja) 2016-03-31 2016-03-31 基板処理方法および基板処理装置
PCT/JP2017/002403 WO2017169019A1 (ja) 2016-03-31 2017-01-24 基板処理方法および基板処理装置
CN201780013898.8A CN108701605B (zh) 2016-03-31 2017-01-24 基板处理方法及基板处理装置
KR1020187024342A KR102110065B1 (ko) 2016-03-31 2017-01-24 기판 처리 방법 및 기판 처리 장치
TW106104898A TWI637434B (zh) 2016-03-31 2017-02-15 基板處理方法及基板處理裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016070403A JP6712482B2 (ja) 2016-03-31 2016-03-31 基板処理方法および基板処理装置

Publications (2)

Publication Number Publication Date
JP2017183576A JP2017183576A (ja) 2017-10-05
JP6712482B2 true JP6712482B2 (ja) 2020-06-24

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Application Number Title Priority Date Filing Date
JP2016070403A Active JP6712482B2 (ja) 2016-03-31 2016-03-31 基板処理方法および基板処理装置

Country Status (5)

Country Link
JP (1) JP6712482B2 (zh)
KR (1) KR102110065B1 (zh)
CN (1) CN108701605B (zh)
TW (1) TWI637434B (zh)
WO (1) WO2017169019A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6642597B2 (ja) * 2018-02-02 2020-02-05 信越半導体株式会社 ウェーハ洗浄処理装置及びウェーハ洗浄方法
JP7015219B2 (ja) * 2018-06-29 2022-02-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR102597005B1 (ko) * 2020-12-29 2023-11-02 세메스 주식회사 기판 처리 방법
US11925963B2 (en) 2022-05-27 2024-03-12 Semes Co., Ltd. Method for treating a substrate

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000223457A (ja) * 1999-02-02 2000-08-11 Sony Corp 半導体装置の洗浄方法及び洗浄装置、及び半導体装置の製造方法
JP2006059918A (ja) * 2004-08-18 2006-03-02 Tokyo Electron Ltd 現像処理方法
JP2007235032A (ja) * 2006-03-03 2007-09-13 Dainippon Screen Mfg Co Ltd 基板処理装置
JP5312856B2 (ja) * 2008-06-27 2013-10-09 大日本スクリーン製造株式会社 基板処理装置
JP5667545B2 (ja) * 2011-10-24 2015-02-12 東京エレクトロン株式会社 液処理装置および液処理方法
JP5586734B2 (ja) * 2012-08-07 2014-09-10 東京エレクトロン株式会社 基板洗浄装置、基板洗浄システム、基板洗浄方法および記憶媒体
JP6017999B2 (ja) * 2013-03-15 2016-11-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6216188B2 (ja) * 2013-09-04 2017-10-18 株式会社Ｓｃｒｅｅｎホールディングス 基板乾燥装置および基板乾燥方法
JP6268469B2 (ja) * 2013-12-18 2018-01-31 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理装置の制御方法、および記録媒体
JP6304592B2 (ja) * 2014-03-25 2018-04-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
KR20180107172A (ko) 2018-10-01
CN108701605B (zh) 2023-03-24
TWI637434B (zh) 2018-10-01
CN108701605A (zh) 2018-10-23
TW201802912A (zh) 2018-01-16
WO2017169019A1 (ja) 2017-10-05
JP2017183576A (ja) 2017-10-05
KR102110065B1 (ko) 2020-05-12

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