JP6705776B2 - 3d nandハードマスク用途向けナノ結晶ダイヤモンド炭素膜 - Google Patents
3d nandハードマスク用途向けナノ結晶ダイヤモンド炭素膜 Download PDFInfo
- Publication number
- JP6705776B2 JP6705776B2 JP2017124160A JP2017124160A JP6705776B2 JP 6705776 B2 JP6705776 B2 JP 6705776B2 JP 2017124160 A JP2017124160 A JP 2017124160A JP 2017124160 A JP2017124160 A JP 2017124160A JP 6705776 B2 JP6705776 B2 JP 6705776B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- nanocrystalline diamond
- etching
- substrate
- diamond layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910003460 diamond Inorganic materials 0.000 title claims description 75
- 239000010432 diamond Substances 0.000 title claims description 75
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title description 16
- 229910052799 carbon Inorganic materials 0.000 title description 15
- 239000000758 substrate Substances 0.000 claims description 91
- 238000000034 method Methods 0.000 claims description 61
- 238000000151 deposition Methods 0.000 claims description 48
- 230000008021 deposition Effects 0.000 claims description 36
- 238000005530 etching Methods 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 238000003860 storage Methods 0.000 claims description 6
- 238000004380 ashing Methods 0.000 claims description 5
- 239000012777 electrically insulating material Substances 0.000 claims description 4
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 239000011370 conductive nanoparticle Substances 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- -1 hafnium nitride Chemical class 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 description 46
- 230000008569 process Effects 0.000 description 34
- 239000000463 material Substances 0.000 description 26
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 14
- 239000001257 hydrogen Substances 0.000 description 14
- 229910052739 hydrogen Inorganic materials 0.000 description 14
- 239000002243 precursor Substances 0.000 description 13
- 239000002245 particle Substances 0.000 description 12
- 150000003254 radicals Chemical class 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 8
- 150000001335 aliphatic alkanes Chemical group 0.000 description 7
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 4
- 239000002113 nanodiamond Substances 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000000725 suspension Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000000527 sonication Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- WMFYOYKPJLRMJI-UHFFFAOYSA-N Lercanidipine hydrochloride Chemical compound Cl.COC(=O)C1=C(C)NC(C)=C(C(=O)OC(C)(C)CN(C)CCC(C=2C=CC=CC=2)C=2C=CC=CC=2)C1C1=CC=CC([N+]([O-])=O)=C1 WMFYOYKPJLRMJI-UHFFFAOYSA-N 0.000 description 1
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/279—Diamond only control of diamond crystallography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0335—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
- H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Composite Materials (AREA)
- Plasma & Fusion (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Chemical Vapour Deposition (AREA)
- Non-Volatile Memory (AREA)
- Drying Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
Claims (13)
- デバイス層をエッチングする方法であって、
デバイス層上にナノ結晶ダイヤモンド層を堆積させることと、
前記デバイス層及び前記ナノ結晶ダイヤモンド層にチャネルを形成することであって、
前記ナノ結晶ダイヤモンド層をパターニングし、エッチングすることと、
前記デバイス層をエッチングすることとを含む、チャネルを形成することと、
前記ナノ結晶ダイヤモンド層を除去することと
を含む、方法。 - 前記デバイス層をエッチングすることが、電気絶縁材料をエッチングすることを含む、請求項1に記載の方法。
- 前記デバイス層が、酸化ケイ素、窒化ケイ素、酸窒化ケイ素、又はそれらの組み合わせを含む、請求項2に記載の方法。
- 前記デバイス層をエッチングすることが、金属又は金属合金をエッチングすることを含む、請求項1に記載の方法。
- 前記デバイス層が、チタン、白金、ルテニウム、窒化チタン、窒化ハフニウム、窒化タンタル、窒化ジルコニウム、又は金属シリサイドを含む、請求項4に記載の方法。
- 前記デバイス層が、半導体フローティングゲート、導電性ナノ粒子、又は個別電荷蓄積誘電体特徴部を含む、請求項1に記載の方法。
- さらに、前記ナノ結晶ダイヤモンド層を堆積させる前にシード層を形成することを含む、請求項1に記載の方法。
- デバイス層をエッチングする方法であって、
基板上にデバイス層を堆積させることと、
前記デバイス層上に、6nm未満の平均粒径を有するナノ結晶ダイヤモンド層を堆積させることと、
前記ナノ結晶ダイヤモンド層からエッチマスクを形成することと、
前記エッチマスクを介して前記デバイス層をエッチングしてチャネルを形成することと、
前記ナノ結晶ダイヤモンド層をアッシングすること
を含む、方法。 - 前記ナノ結晶ダイヤモンド層の堆積中、前記基板が500℃〜650℃の温度範囲に維持される、請求項8に記載の方法。
- さらに、前記ナノ結晶ダイヤモンド層を堆積させる前にシード層を形成することを含む、請求項8に記載の方法。
- デバイス層をエッチングする方法であって、
基板上に複数のデバイス層を堆積させることと、
前記複数のデバイス層上にナノ結晶ダイヤモンド層を堆積させることと、
前記複数のデバイス層及び前記ナノ結晶ダイヤモンド層にチャネルを形成することであって、
前記ナノ結晶ダイヤモンド層をパターニングし、エッチングして、エッチマスクを形成することと、
前記エッチマスクを介して前記複数のデバイス層をエッチングすることとを含む、チャネルを形成することと、
前記ナノ結晶ダイヤモンド層を除去すること
を含む、方法。 - 前記複数のデバイス層をエッチングすることが、電気絶縁材料をエッチングすることを含む、請求項11に記載の方法。
- 前記複数のデバイス層をエッチングすることが、酸化ケイ素、窒化ケイ素、酸窒化ケイ素、又はそれらの組み合わせをエッチングすることを含む、請求項12に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462045196P | 2014-09-03 | 2014-09-03 | |
US62/045,196 | 2014-09-03 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017512789A Division JP6267400B2 (ja) | 2014-09-03 | 2015-08-25 | 3d nandハードマスク用途向けナノ結晶ダイヤモンド炭素膜 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017224823A JP2017224823A (ja) | 2017-12-21 |
JP6705776B2 true JP6705776B2 (ja) | 2020-06-03 |
Family
ID=55403471
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017512789A Active JP6267400B2 (ja) | 2014-09-03 | 2015-08-25 | 3d nandハードマスク用途向けナノ結晶ダイヤモンド炭素膜 |
JP2017124160A Active JP6705776B2 (ja) | 2014-09-03 | 2017-06-26 | 3d nandハードマスク用途向けナノ結晶ダイヤモンド炭素膜 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017512789A Active JP6267400B2 (ja) | 2014-09-03 | 2015-08-25 | 3d nandハードマスク用途向けナノ結晶ダイヤモンド炭素膜 |
Country Status (6)
Country | Link |
---|---|
US (2) | US9502262B2 (ja) |
JP (2) | JP6267400B2 (ja) |
KR (2) | KR102250012B1 (ja) |
CN (2) | CN106796883B (ja) |
TW (3) | TWI670831B (ja) |
WO (1) | WO2016036533A1 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10249495B2 (en) * | 2016-06-28 | 2019-04-02 | Applied Materials, Inc. | Diamond like carbon layer formed by an electron beam plasma process |
US10760157B2 (en) * | 2016-08-09 | 2020-09-01 | Akhan Semiconductor, Inc. | Thin film diamond coating system and method |
US10858727B2 (en) | 2016-08-19 | 2020-12-08 | Applied Materials, Inc. | High density, low stress amorphous carbon film, and process and equipment for its deposition |
US11043372B2 (en) * | 2017-06-08 | 2021-06-22 | Applied Materials, Inc. | High-density low temperature carbon films for hardmask and other patterning applications |
KR102227347B1 (ko) * | 2017-09-05 | 2021-03-11 | 어플라이드 머티어리얼스, 인코포레이티드 | 3d 메모리 구조들에서의 고종횡비 홀 형성에 대한 상향식 접근법 |
CN107946311B (zh) * | 2017-11-21 | 2020-09-25 | 长江存储科技有限责任公司 | 控制3d nand闪存结构中沟道关键尺寸的方法 |
KR20220143158A (ko) * | 2018-01-15 | 2022-10-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 원격 플라즈마 산화에 대한 아르곤 추가 |
CN108315818A (zh) * | 2018-05-02 | 2018-07-24 | 苏州贝莱克晶钻科技有限公司 | 单晶金刚石合成装置和方法 |
CN112002696B (zh) | 2018-10-26 | 2023-08-04 | 长江存储科技有限责任公司 | 3dnand存储器件的结构及其形成方法 |
KR20200086141A (ko) * | 2019-01-08 | 2020-07-16 | 삼성전자주식회사 | 실리콘 질화물용 식각제 조성물 및 반도체 소자의 제조 방법 |
WO2020198944A1 (en) * | 2019-03-29 | 2020-10-08 | Yangtze Memory Technologies Co., Ltd. | Memory stacks having silicon nitride gate-to-gate dielectric layers and methods for forming the same |
JP2020191427A (ja) | 2019-05-23 | 2020-11-26 | 東京エレクトロン株式会社 | ハードマスク、基板処理方法及び基板処理装置 |
US11384428B2 (en) * | 2019-07-19 | 2022-07-12 | Applied Materials, Inc. | Carbon layer covered mask in 3D applications |
TW202201483A (zh) | 2020-02-19 | 2022-01-01 | 日商東京威力科創股份有限公司 | 基板處理方法及基板處理系統 |
JP2021145031A (ja) * | 2020-03-11 | 2021-09-24 | キオクシア株式会社 | 半導体装置の製造方法 |
US20230142791A1 (en) | 2020-03-31 | 2023-05-11 | Toray Industries, Inc. | Inorganic solid object pattern manufacturing method and inorganic solid object pattern |
TWI723856B (zh) * | 2020-04-28 | 2021-04-01 | 逢甲大學 | 大氣常壓低溫電漿沉積抗刮疏水層的方法 |
US11594416B2 (en) | 2020-08-31 | 2023-02-28 | Applied Materials, Inc. | Tribological properties of diamond films |
US20220127721A1 (en) * | 2020-10-23 | 2022-04-28 | Applied Materials, Inc. | Depositing Low Roughness Diamond Films |
KR102528990B1 (ko) * | 2020-12-28 | 2023-05-03 | 알에프에이치아이씨 주식회사 | 다이아몬드 기판, 다이아몬드 커버, 다이아몬드 플레이트 및 반도체 패키지의 제조 공정, 및 이를 이용하여 제조된 반도체 패키지 |
US11521926B2 (en) | 2021-03-10 | 2022-12-06 | Nanya Technology Corporation | Semiconductor device structure with serpentine conductive feature and method for forming the same |
US11946134B2 (en) * | 2022-01-27 | 2024-04-02 | Applied Materials, Inc. | In situ nucleation for nanocrystalline diamond film deposition |
US20230260800A1 (en) * | 2022-02-15 | 2023-08-17 | Applied Materials, Inc. | Methods to reduce uncd film roughness |
CN115632048B (zh) * | 2022-09-23 | 2023-08-01 | 北京科技大学 | 一种具有纳米金刚石钝化层的TaN薄膜电阻器及其制备方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2666172B1 (fr) * | 1990-08-24 | 1997-05-16 | Thomson Csf | Transistor de puissance et procede de realisation. |
US6811612B2 (en) * | 2000-01-27 | 2004-11-02 | The University Of Chicago | Patterning of nanocrystalline diamond films for diamond microstructures useful in MEMS and other devices |
US6673684B1 (en) * | 2002-07-31 | 2004-01-06 | Advanced Micro Devices, Inc. | Use of diamond as a hard mask material |
JP2004111704A (ja) | 2002-09-19 | 2004-04-08 | Mitsubishi Electric Corp | メンブレンマスクの製法および該製法を用いたメンブレンマスク |
JP2004176132A (ja) * | 2002-11-27 | 2004-06-24 | Toppan Printing Co Ltd | ナノダイヤモンド膜及びその製造方法 |
US7306778B2 (en) * | 2003-06-19 | 2007-12-11 | Nanotech Llc | Diamond films and methods of making diamond films |
US7128889B2 (en) * | 2003-06-26 | 2006-10-31 | Carlisle John A | Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries |
JP2005039082A (ja) * | 2003-07-16 | 2005-02-10 | Toppan Printing Co Ltd | マスクブランクス及びステンシルマスク及びその製造方法及びその露光方法 |
WO2005116306A1 (ja) * | 2004-05-27 | 2005-12-08 | Toppan Printing Co., Ltd. | ナノクリスタルダイヤモンド膜、その製造方法、及びナノクリスタルダイヤモンド膜を用いた装置 |
US7394103B2 (en) * | 2004-09-13 | 2008-07-01 | Uchicago Argonne, Llc | All diamond self-aligned thin film transistor |
EP1929064A1 (en) * | 2005-09-29 | 2008-06-11 | UAB Research Foundation | Ultra smooth nanostructured diamond films and compositions and methods for producing same |
TWI395335B (zh) * | 2006-06-30 | 2013-05-01 | Applied Materials Inc | 奈米結晶的形成 |
JP2009091234A (ja) * | 2007-09-18 | 2009-04-30 | Tokyo Univ Of Science | 導電性ダイヤモンド膜が形成された基板及び導電性ダイヤモンド膜が形成された基板の製造方法 |
US8008095B2 (en) * | 2007-10-03 | 2011-08-30 | International Business Machines Corporation | Methods for fabricating contacts to pillar structures in integrated circuits |
US8793866B1 (en) * | 2007-12-19 | 2014-08-05 | Western Digital (Fremont), Llc | Method for providing a perpendicular magnetic recording head |
US8470701B2 (en) | 2008-04-03 | 2013-06-25 | Advanced Diamond Technologies, Inc. | Printable, flexible and stretchable diamond for thermal management |
KR20110120661A (ko) * | 2010-04-29 | 2011-11-04 | 주식회사 하이닉스반도체 | 비휘발성 메모리 장치 및 그의 제조 방법 |
JP2013534058A (ja) * | 2010-06-30 | 2013-08-29 | サンディスク テクノロジィース インコーポレイテッド | 超高密度垂直nandメモリデバイスおよびそれを作る方法 |
JP2012151187A (ja) * | 2011-01-17 | 2012-08-09 | Toshiba Corp | 半導体記憶装置の製造方法 |
JP2012227326A (ja) * | 2011-04-19 | 2012-11-15 | Toshiba Corp | 不揮発性半導体記憶装置とその製造方法 |
US20130175546A1 (en) | 2012-01-06 | 2013-07-11 | Akhan Technologies, Inc. | Diamond Semiconductor System and Method |
KR102015578B1 (ko) * | 2012-09-11 | 2019-08-28 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그 형성방법 |
JP5951442B2 (ja) * | 2012-10-17 | 2016-07-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
2015
- 2015-08-20 TW TW106115937A patent/TWI670831B/zh active
- 2015-08-20 TW TW107102838A patent/TWI656575B/zh active
- 2015-08-20 TW TW104127217A patent/TWI618225B/zh active
- 2015-08-24 US US14/833,858 patent/US9502262B2/en active Active
- 2015-08-25 KR KR1020177018041A patent/KR102250012B1/ko active IP Right Grant
- 2015-08-25 CN CN201580047628.XA patent/CN106796883B/zh active Active
- 2015-08-25 CN CN202010766285.5A patent/CN112053950A/zh active Pending
- 2015-08-25 WO PCT/US2015/046713 patent/WO2016036533A1/en active Application Filing
- 2015-08-25 KR KR1020177009088A patent/KR101821800B1/ko active IP Right Grant
- 2015-08-25 JP JP2017512789A patent/JP6267400B2/ja active Active
-
2016
- 2016-11-10 US US15/348,170 patent/US9865464B2/en active Active
-
2017
- 2017-06-26 JP JP2017124160A patent/JP6705776B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
TW201828363A (zh) | 2018-08-01 |
US9865464B2 (en) | 2018-01-09 |
TWI656575B (zh) | 2019-04-11 |
TW201739038A (zh) | 2017-11-01 |
KR20170048545A (ko) | 2017-05-08 |
US20170062216A1 (en) | 2017-03-02 |
KR101821800B1 (ko) | 2018-01-24 |
KR102250012B1 (ko) | 2021-05-07 |
KR20170081716A (ko) | 2017-07-12 |
US20160064500A1 (en) | 2016-03-03 |
TWI670831B (zh) | 2019-09-01 |
WO2016036533A1 (en) | 2016-03-10 |
CN106796883A (zh) | 2017-05-31 |
JP2017533580A (ja) | 2017-11-09 |
CN106796883B (zh) | 2020-08-28 |
JP2017224823A (ja) | 2017-12-21 |
US9502262B2 (en) | 2016-11-22 |
TWI618225B (zh) | 2018-03-11 |
JP6267400B2 (ja) | 2018-01-24 |
TW201614811A (en) | 2016-04-16 |
CN112053950A (zh) | 2020-12-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6705776B2 (ja) | 3d nandハードマスク用途向けナノ結晶ダイヤモンド炭素膜 | |
US10954129B2 (en) | Diamond-like carbon as mandrel | |
US9382625B2 (en) | Remote plasma source based cyclic CVD process for nanocrystalline diamond deposition | |
TWI749165B (zh) | 用於硬遮罩應用之硼摻雜碳化鎢 | |
TW202039906A (zh) | 蝕刻腔室中的方向性沉積 | |
TW201515102A (zh) | 電漿蝕刻方法及電漿蝕刻裝置 | |
TW202226378A (zh) | 選擇性各向異性金屬蝕刻 | |
TWI544543B (zh) | A manufacturing method of a semiconductor device, and a computer recording medium | |
US11894230B2 (en) | Tribological properties of diamond films | |
TWI840814B (zh) | 金屬摻雜的碳硬遮罩 | |
JP7441244B2 (ja) | 低い粗さのダイヤモンドフィルムの堆積 | |
US11626278B2 (en) | Catalytic formation of boron and carbon films | |
JP2024520039A (ja) | 金属ドープされたカーボンハードマスク | |
TW202326865A (zh) | 凹陷的金屬蝕刻方法 | |
TW202321495A (zh) | 選擇性石墨烯沉積 | |
JP2007266056A (ja) | プラズマエッチング方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170828 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180820 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190920 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191001 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191225 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200422 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200514 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6705776 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |