JP7194725B2 - 3dメモリ構造における高アスペクト比孔形成へのボトムアップアプローチ - Google Patents
3dメモリ構造における高アスペクト比孔形成へのボトムアップアプローチ Download PDFInfo
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- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
Description
(h)所定の高さの構造を成長させるために、(b)から(g)を任意選択的に反復することと、(i)構造化された基板のフィーチャからすべてのピラーを除去することとを含む。
Claims (15)
- メモリ構造を形成する方法であって、
構造化された基板のフィーチャ内に金属膜を堆積させることであって、前記構造化された基板が、前記基板の表面から一定の深さで前記基板の中に延びる複数のフィーチャを備える、金属膜を堆積させることと、
前記金属膜を体積膨張させて、前記フィーチャから真っ直ぐ延びるピラーを形成することと、
前記ピラーの高さより小さい厚さにブランケット膜を堆積させることであって、当該ブランケット膜が、前記ピラーの上部に形成される、ブランケット膜を堆積させることと、
前記ピラーの前記上部から前記ブランケット膜を除去することと、
前記複数のフィーチャが少なくとも部分的に再形成されるように、前記ピラーの高さを、前記ブランケット膜の厚さより低くなるように、下げることと、
所定の高さの構造を成長させるために、前記金属膜を堆積させること、ピラーを形成すること、前記ブランケット膜を堆積させること、前記ピラーの前記上部から前記ブランケット膜を除去すること、及び前記ピラーの高さを下げることを任意選択的に反復することと、
前記構造化された基板の前記フィーチャからすべての前記ピラーを除去することと
を含む方法。 - 前記フィーチャ内に前記金属膜を堆積させることが、前記フィーチャ内に及び前記基板の表面に共形金属膜を形成することと、前記基板の表面から前記金属膜を除去することとを含む、請求項1に記載の方法。
- 前記基板の表面から前記金属膜を除去することが、化学的機械的平坦化(CMP)又は金属選択的エッチングのうちの1つ以上を含む、請求項2に記載の方法。
- 前記金属膜を体積膨張させることが、前記金属膜を酸化させること又は窒化させることのうちの1つ以上を含む、請求項1に記載の方法。
- 前記金属膜が、タングステンを含み、前記ピラーが、酸化タングステンを含む、請求項4に記載の方法。
- 前記ブランケット膜が、複数の交互層を含む、請求項1に記載の方法。
- 前記交互層が、酸化物層、及び金属層又は窒化物層を含む、請求項6に記載の方法。
- 前記ブランケット膜が、非共形堆積によって堆積される、請求項6に記載の方法。
- 前記ピラーの前記上部から前記ブランケット膜を除去することが、化学的機械的平坦化(CMP)又は選択的エッチング処理のうちの1つ以上を含む、請求項1に記載の方法。
- 前記ピラーの前記上部から前記ブランケット膜を除去することと同時に前記ピラーの高さが下げられる、請求項9に記載の方法。
- 前記ピラーの高さを下げることが、前記ピラーをエッチング液に曝すことを含む、請求項1に記載の方法。
- 前記エッチング液が、金属ハロゲン化物を含む、請求項11に記載の方法。
- 前記構造化された基板の前記フィーチャからすべての前記ピラーを除去することが、前記ブランケット膜又は前記基板に実質的に影響を及ぼすことなく、前記ピラーを金属ハロゲン化物のエッチャントに曝して、前記ピラーを選択的に除去することを含む、請求項1に記載の方法。
- メモリ構造を形成する方法であって、
複数のフィーチャが内部に形成された表面を有する構造化された基板を設けることであって、前記フィーチャが、前記基板の前記表面から一定の深さで延びる、構造化された基板を設けることと、
前記構造化された基板の前記フィーチャ内に共形金属膜を堆積させ、前記構造化された基板の前記表面にオーバーバーデンを形成することと、
前記金属膜が実質的に前記フィーチャ内のみに残るように、前記基板の前記表面から前記オーバーバーデンを除去することと、
前記基板の前記フィーチャ内の前記金属膜を酸化させ、前記フィーチャから真っ直ぐ延びるピラーを形成することであって、当該ピラーが、高さ及び上部を有する、ピラーを形成することと、
酸化物層と窒化物層を交互に含むブランケット膜を堆積させることであって、当該ブランケット膜が、前記ピラーの高さより小さい厚さに堆積され、当該ブランケット膜が、前記ピラーの上部に形成される、ブランケット膜を堆積させることと、
前記ピラーの前記上部から前記ブランケット膜を除去することと、
前記ピラーの前記上部が前記ブランケット膜の前記表面より低くなり、前記フィーチャが少なくとも部分的に再形成されるように、前記ピラーの高さを、前記ブランケット膜の厚さより低くなるように、下げることと、
所定の高さの構造を成長させるために、前記金属膜を堆積させること、ピラーを形成すること、前記ブランケット膜を堆積させること、前記ピラーの前記上部から前記ブランケット膜を除去すること、及び前記ピラーの高さを下げることを任意選択的に反復することと、
前記構造化された基板の前記フィーチャからすべての前記ピラーを除去することと
を含む方法。 - メモリ構造を形成する方法であって、
(a)複数のフィーチャが内部に形成された表面を有する構造化された基板を設けることであって、前記フィーチャが、前記基板の前記表面から一定の深さで延びる、構造化された基板を設けることと、
(b)前記構造化された基板の前記フィーチャ内に共形金属膜を堆積させ、前記構造化された基板の前記表面にオーバーバーデンを形成することと、
(c)前記金属膜が実質的に前記フィーチャ内のみに残るように、前記基板の前記表面から前記オーバーバーデンを除去することと、
(d)前記基板の前記フィーチャ内の前記金属膜を酸化させ、前記フィーチャから真っ直ぐ延びるピラーを形成することであって、当該ピラーが、高さ及び上部を有する、ピラーを形成することと、
(e)酸化物層と窒化物層を交互に含むブランケット膜を堆積させることであって、当該ブランケット膜が、前記ピラーの高さより小さい厚さに堆積され、当該ブランケット膜が、前記ピラーの上部に形成される、ブランケット膜を堆積させることと、
(f)前記ピラーの前記上部から前記ブランケット膜を除去することと、
(g)前記ピラーの前記上部が前記ブランケット膜の前記表面より低くなり、前記フィーチャが少なくとも部分的に再形成されるように、前記ピラーの高さを、前記ブランケット膜の厚さより低くなるように、下げることと、
(h)所定の高さの構造を成長させるために、(b)から(g)を任意選択的に反復することと、
(i)前記構造化された基板の前記フィーチャからすべての前記ピラーを除去することと
を含む方法。
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US20210050365A1 (en) | 2021-02-18 |
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TWI724323B (zh) | 2021-04-11 |
US11315943B2 (en) | 2022-04-26 |
JP2020532870A (ja) | 2020-11-12 |
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